9.5 Ω R
ON
, 16-Channel, Differential 8-Channel,
±15 V/+12 V/±5 V iCMOS Multiplexers
Data Sheet
ADG1406/ADG1407
Rev. C Document Feedback
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FEATURES
9.5 Ω on resistance at 25°C
Up to 300 mA of continuous current
Fully specified at ±15 V/+12 V/±5 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
28-lead TSSOP and 32-lead, 5 mm × 5 mm LFCSP
APPLICATIONS
Medical equipment
Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
FUNCTIONAL BLOCK DIAGRAMS
ADG1406
S1
S
16
D
1-OF-16
DECODER
A0 A1 A2 A3 EN
07419-001
Figure 1.
ADG1407
S1A
S8B
DA
DB
S8A
S1B
1-OF-8
DECODER
A0 A1 A2 EN
07419-002
Figure 2.
GENERAL DESCRIPTION
The ADG1406 and ADG1407 are monolithic iCMOS® analog
multiplexers comprising 16 single channels and eight differential
channels, respectively. The ADG1406 switches one of 16 inputs
to a common output, as determined by the 4-bit binary address
lines (A0, A1, A2, and A3). The ADG1407 switches one of eight
differential inputs to a common differential output, as determined
by the 3-bit binary address lines (A0, A1, and A2). An EN input
on both devices enables or disables the device. When disabled,
all channels switch off. When on, each channel conducts equally
well in both directions and has an input signal range that extends
to the supplies.
The industrial CMOS (iCMOS) modular manufacturing
process combines high voltage complementary metal-oxide
semiconductor (CMOS) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage devices has been able to achieve. Unlike analog
ICs using conventional CMOS processes, iCMOS components
can tolerate high supply voltages while providing increased
performance, dramatically lower power consumption, and
reduced package size.
The ultralow on resistance and on-resistance flatness of these
switches make them ideal solutions for data acquisition and gain
switching applications where low distortion is critical. iCMOS
construction ensures ultralow power dissipation, making the
devices ideally suited for portable and battery-powered instruments.
Table 1. Related Devices
Device No. Description
ADG1206/ADG1207
Low capacitance, low charge injection,
and low leakage 8-/16-channel ±15 V
multiplexers
ADG1406/ADG1407 Data Sheet
Rev. C | Page 2 of 20
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagrams ............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
±15 V Dual Supply ....................................................................... 3
12 V Single Supply ........................................................................ 4
±5 V Dual Supply ......................................................................... 6
Continuous Current per Channel .............................................. 7
Absolute Maximum Ratings ............................................................8
Thermal Resistance .......................................................................8
ESD Caution...................................................................................8
Pin Configurations and Function Descriptions ............................9
Typical Performance Characteristics ........................................... 13
Terminology .................................................................................... 17
Test Circuits ..................................................................................... 18
Outline Dimensions ....................................................................... 20
Ordering Guide .......................................................................... 20
REVISION HISTORY
6/2016—Rev. B to Rev. C
Changes to Analog Inputs Parameter, Table 7 .............................. 8
Added Digital Inputs Parameter, Table 7 ...................................... 8
4/2016—Rev. A to Rev. B
Changed CP-32-2 to CP-32-7 ...................................... Throughout
Changed LFCSP_VQ to LFCSP ................................... Throughout
Changes to Figure 4 and Table 9 ..................................................... 9
Changes to Figure 6 and Table 10 ................................................. 11
Updated Outline Dimensions ....................................................... 20
Changes to Ordering Guide .......................................................... 20
3/2009—Rev. 0 to Rev. A
Change to I
DD
Parameter, Table 2 ................................................... 4
Change to I
DD
Parameter, Table 3 ................................................... 5
Changes to Figure 16 ...................................................................... 14
8/2008—Revision 0: Initial Version
Data Sheet ADG1406/ADG1407
Rev. C | Page 3 of 20
SPECIFICATIONS
±15 V DUAL SUPPLY
V
DD
= +15 V ± 10%, V
SS
= –15 V ± 10%, GND = 0 V, unless otherwise noted.
1
Table 2.
Parameter +25°C
−40°C to
+85°C
−40°C to
+125°C
1
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
SS
to V
DD
V
On Resistance (R
ON
) 9.5 Ω typ V
DD
= +13.5 V, V
SS
= −13.5 V, V
S
= ±10 V,
11.5 14 16 Ω max I
S
= −10 mA; see Figure 27
On-Resistance Match Between
Channels (ΔR
ON
)
0.55 Ω typ
V
DD
= +13.5 V, V
SS
= −13.5 V , V
S
= ±10 V,
I
S
= −10 mA
1 1.5 1.7 Ω max
On-Resistance Flatness (R
FLAT(ON)
) 1.6 Ω typ
V
DD
= +13.5 V, V
SS
= −13.5 V, V
S
= ±10 V,
I
S
= −10 mA
1.9 2.15 2.3 Ω max
LEAKAGE CURRENTS V
DD
= +16.5 V, V
SS
= −16.5 V
Source Off Leakage, I
S
(Off) ±0.01 nA typ
V
S
= ±10 V, V
D
= 10 V; see Figure 28
±0.25 ±1 ±4 nA max
Drain Off Leakage, I
D
(Off) ±0.01 nA typ
V
S
= ±10 V, V
D
= 10 V; see Figure 28
±0.5 ±3 ±20 nA max
Channel On Leakage, I
D
, I
S
(On) ±0.05 nA typ V
S
= V
D
= ±10 V; see Figure 29
±0.5 ±3 ±20 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current ±0.002 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS
2
Transition Time, t
TRANSITION
105 ns typ R
L
= 100 Ω, C
L
= 35 pF
160 200 225 ns max V
S
= 10 V, see Figure 30
Break-Before-Make Time Delay, t
BBM
40 ns typ R
L
= 100 Ω, C
L
= 35 pF
10 ns min V
S1
= V
S2
= 10 V; see Figure 31
t
ON
(EN) 83 ns typ R
L
= 100 Ω, C
L
= 35 pF
110 140 155 ns max V
S
= 10 V; see Figure 32
t
OFF
(EN) 98 ns typ R
L
= 100 Ω, C
L
= 35 pF
120 145 165 ns max V
S
= 10 V; see Figure 32
Charge Injection 10 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 33
Off Isolation −73 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 34
Channel-to-Channel Crosstalk −70 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 35
Total Harmonic Distortion Plus Noise
(THD + N)
0.07 % typ
R
L
= 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz; see
Figure 37
−3 dB Bandwidth R
L
= 50 Ω, C
L
= 5 pF; see Figure 36
ADG1406 60 MHz typ
ADG1407 110 MHz typ
Insertion Loss 0.6 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 36
C
S
(Off) 8 pF typ f = 1 MHz
C
D
(Off) f = 1 MHz
ADG1406 90 pF typ
ADG1407 45 pF typ

ADG1407BRUZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Multiplexer Switch ICs 8:1 110MHz 9.5 Ohm iCMOS
Lifecycle:
New from this manufacturer.
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