VN5160S-E Electrical specifications
Doc ID 13493 Rev 5 19/31
Figure 26. High-level STAT_DIS voltage Figure 27. Low-level STAT_DIS voltage
VsdH[V]
0
1
2
3
4
5
6
7
8
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
VsdL[V]
0
1
2
3
4
5
6
7
8
-50 -25 0 25 50 75 100 125 150 175
TcC)
Application Information VN5160S-E
20/31 Doc ID 13493 Rev 5
3 Application Information
Figure 28. Application schematic
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
GND
only)
This can be used with any type of load.
The following is an indication on how to dimension the R
GND
resistor.
1. R
GND
600mV / (I
S(on)max
)
2. R
GND
V
CC
) / (-I
GND
)
where -I
GND
is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power dissipation in R
GND
(when V
CC
<0: during reverse battery situations) is:
P
D
= (-V
CC
)
2
/ R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum On-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND
will produce a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
V
CC
GND
OUTPUT
D
GND
R
GND
D
ld
µC
+5V
V
GND
STAT_DIS
INPUT
R
prot
R
prot
R
prot
+5V
STATUS
VN5160S-E Application Information
Doc ID 13493 Rev 5 21/31
3.1.2 Solution 2: a diode (D
GND
) in the ground line
A resistor (R
GND
=1kshould be inserted in parallel to D
GND
if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
D
ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
CC
max DC rating. The same applies if the device is subject to transients on the V
CC
line
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the V
CC
line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prot
) in line to
prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os.
-V
CCpeak
/I
latchup
R
prot
(V
OHC
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
20mA; V
OHµC
4.5V
5k R
prot
180k.
Recommended R
prot
values is 10k
3.4 Open load detection in off-state
Off-state open load detection requires an external pull-up resistor (R
PU
) connected between
OUTPUT pin and a positive supply voltage (V
PU
) like the +5V line used to supply the
microprocessor.
The external resistor has to be selected according to the following requirements:
1. no false open load indication when load is connected: in this case we have to avoid
V
OUT
to be higher than V
Olmin
; this results in the following condition
V
OUT
= (V
PU
/(R
L
+R
PU
))R
L
<V
Olmin
.
2. no misdetection when load is disconnected: in this case the V
out
has to be higher than
V
OLmax
; this results in the following condition R
PU
<(V
PU
–V
OLmax
)/I
L(off2)
.
Because I
s(OFF)
may significantly increase if V
out
is pulled high (up to several mA), the pull-
up resistor R
PU
should be connected to a supply that is switched OFF when the module is in
standby.

VN5160S-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Sngl Ch HiSide Drivr
Lifecycle:
New from this manufacturer.
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