VN5160S-E Electrical specifications
Doc ID 13493 Rev 5 7/31
2 Electrical specifications
Figure 3. Current and voltage conventions
Note: V
F
= V
OUT
- V
CC
during reverse battery condition.
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
V
F
I
GND
V
CC
GND
OUTPUTSTAT_DIS
I
SD
INPUT
I
IN
V
SD
V
INn
I
OUT
V
OUT
STATUS
I
STAT
V
STAT
V
CC
I
S
Table 4. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
DC supply voltage 41 V
- V
CC
Reverse DC supply voltage 0.3 V
- I
GND
DC reverse ground pin current 200 mA
I
OUT
DC output current
Internally
limited
A
- I
OUT
Reverse DC output current 6 A
I
IN
DC input current +10 / -1 mA
I
STAT
DC status current +10 / -1 mA
I
STAT_DIS
DC status disable current +10 / -1 mA
E
MAX
Maximum switching energy (single pulse)
(L= 12mH; R
L
= 0; V
bat
=13.5V; T
jstart
=150ºC; I
OUT
= I
limL
(Typ.))
34 mJ
Electrical specifications VN5160S-E
8/31 Doc ID 13493 Rev 5
2.2 Thermal data
V
ESD
Electrostatic discharge (Human Body Model: R=1.5K C=100pF)
INPUT
–STATUS
–STAT_DIS
–OUTPUT
–V
CC
4000
4000
4000
5000
5000
V
V
V
V
V
V
ESD
Charge device model (CDM-AEC-Q100-011) 750 V
T
j
Junction operating temperature -40 to 150 °C
T
stg
Storage temperature -55 to 150 °C
Table 4. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 5. Thermal data
Symbol Parameter Value Unit
R
thj-pins
Thermal resistance junction-pins (MAX) 30 °C/W
R
thj-amb
Thermal resistance junction-ambient (MAX) See Figure 32
°C/W
VN5160S-E Electrical specifications
Doc ID 13493 Rev 5 9/31
2.3 Electrical characteristics
Values specified in this section are for 8V<V
CC
<36V; -40°C<T
j
<150°C, unless otherwise
stated.
Table 6. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply
voltage
4.5 13 36 V
V
USD
Undervoltage shutdown 3.5 4.5 V
V
USDhyst
Undervoltage shutdown
hysteresis
0.5 V
R
ON
(1)
1. Guaranteed by design/characterization
On-state resistance
I
OUT
=1A; T
j
=25°C
I
OUT
=1A; T
j
=150°C
I
OUT
=1A; V
CC
=5V; T
j
=25°C
160
320
210
m
m
m
V
clamp
Clamp voltage I
S
= 20mA 41 46 52 V
I
S
Supply current
Off-state; V
CC
=13V; V
IN
=V
OUT
=0V;
T
j
=25°C;
On-state; V
CC
=13V; V
IN
=5V;
I
OUT
=0A
2
(2)
1.9
2. PowerMOS leakage included
5
(1)(2)
3.5
µA
mA
I
L(off1)
Off-state output
current
(2)
V
IN
=V
OUT
=0V; V
CC
=13V; Tj=25°C
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=125°C
0
0
0.01 3
5
µA
I
L(off2)
V
IN
= 0V; V
OUT
= 4V -75 0
V
F
Output - V
CC
diode
voltage
-I
OUT
= 0.6A; T
j
= 150°C 0.7 V
Table 7. Switching (V
CC
=13V; T
j
= 25°C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time R
L
= 13 (see Figure 6)10µs
t
d(off)
Turn-off delay time R
L
= 13(see Figure 6)15µs
dV
OUT
/dt
(on)
Turn-on voltage slope R
L
= 13 See Figure 21 Vµs
dV
OUT
/dt
(off)
Turn-off voltage slope R
L
= 13 See Figure 22 Vµs
W
ON
Switching energy
losses during t
won
R
L
= 13(see Figure 6)0.04mJ
W
OFF
Switching energy
losses during t
woff
R
L
= 13(see Figure 6)0.04mJ

VN5160S-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Sngl Ch HiSide Drivr
Lifecycle:
New from this manufacturer.
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