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BF1207,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 28 July 2005 10 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
V
DS(A)
=5V; V
G2-S
=4V; V
DS(B)
=V
G1-S(B)
=0V;
I
D(A)
= 18 mA.
V
DS(A)
=5V; V
G2-S
=4V; V
DS(B)
=V
G1-S(B)
=0V;
I
D(A)
= 18 mA.
Fig 12. Amplifier A: input admittance as a function of
frequency; typical values
Fig 13. Amplifier A: forward transfer admittance and
phase as a function of frequency; typical values
V
DS(A)
=5V; V
G2-S
=4V; V
DS(B)
=V
G1-S(B)
=0V;
I
D(A)
= 18 mA.
V
DS(A)
=5V; V
G2-S
=4V; V
DS(B)
=V
G1-S(B)
=0V;
I
D(A)
= 18 mA.
Fig 14. Amplifier A: reverse transfer admittance and
phase as a function of frequency: typical values
Fig 15. Amplifier A: output admittance as a function of
frequency; typical values
001aac890
f (MHz)
10 10
3
10
2
10
−1
1
10
10
2
b
is
, g
is
(mS)
10
−2
b
is
g
is
f (MHz)
10 10
3
10
2
001aac891
10
10
2
|y
fs
|
(mS)
1
−10
−10
2
ϕ
fs
(deg)
−1
|y
fs
|
ϕ
fs
001aac892
10
2
10
10
3
|y
rs
|
(µS)
1
f (MHz)
10 10
3
10
2
−10
2
−10
−10
3
ϕ
rs
(deg)
−1
|y
rs
|
ϕ
rs
001aac893
1
10
−1
10
b
os
, g
os
(mS)
10
−2
f (MHz)
10 10
3
10
2
b
os
g
os
9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 28 July 2005 11 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
8.1.2 Scattering parameters for amplifier A
Table 9: Scattering parameters for amplifier A
V
DS(A)
=5V; V
G2-S
=4V; I
D(A)
= 18 mA; V
DS(B)
=0V;V
G1-S(B)
=0V; T
amb
= 25
°
C; typical values.
f
(MHz)
s
11
s
21
s
12
s
22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
50 0.987 −4.169 2.87 175.5 0.0008 83.82 0.992 −1.42
100 0.983 −8.109 2.95 171.14 0.0015 82.08 0.992 −2.86
200 0.976 −15.97 2.93 162.44 0.0028 77.50 0.990 −5.66
300 0.966 −23.844 2.89 153.77 0.0041 73.45 0.989 −8.49
400 0.952 −31.575 2.84 145.23 0.0053 69.42 0.986 −11.28
500 0.935 −35.225 2.78 136.82 0.0063 65.72 0.984 −14.03
600 0.917 −46.678 2.72 128.50 0.0072 61.48 0.981 −16.80
700 0.898 −54.094 2.65 120.44 0.0079 58.05 0.977 −19.55
800 0.876 −61.205 2.57 112.33 0.0084 52.74 0.974 −22.32
900 0.852 −68.299 2.49 104.32 0.0089 48.61 0.970 −25.10
1000 0.826 −75.321 2.41 96.42 0.0091 43.86 0.967 −27.88
9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 28 July 2005 12 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
8.2 Dynamic characteristics for amplifier B
[1] For the MOSFET not in use: V
G1-S(A)
= 0 V; V
DS(A)
=0 V.
[2] Measured in Figure 30 test circuit.
Table 10: Dynamic characteristics for amplifier B
Common source; T
amb
=25
°
C; V
G2-S
=4V; V
DS
=5V; I
D
= 14 mA.
[1]
Symbol Parameter Conditions Min Typ Max Unit
y
fs
forward transfer admittance T
j
=25°C263141mS
C
iss(G1)
input capacitance at gate1 f = 100 MHz - 1.8 2.3 pF
C
iss(G2)
input capacitance at gate2 f = 1 MHz - 3.5 - pF
C
oss
output capacitance f = 100 MHz - 0.8 - pF
C
rss
reverse transfer capacitance f = 100 MHz - 20 - fF
G
tr
power gain B
S
=B
S(opt)
; B
L
=B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS 30 34 38 dB
f = 400 MHz; G
S
= 2 mS; G
L
=1mS 27 31 35 dB
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS 23 27 31 dB
NF noise figure f = 11 MHz; G
S
= 20 mS; B
S
=0S - 5 - dB
f = 400 MHz; Y
S
=Y
S(opt)
- 1.3 - dB
f = 800 MHz; Y
S
=Y
S(opt)
- 1.4 - dB
Xmod cross-modulation input level for k=1%;f
w
= 50 MHz; f
unw
=60MHz
[2]
at 0 dB AGC 90 - - dBµV
at 10 dB AGC - 88 - dBµV
at 20 dB AGC - 94 - dBµV
at 40 dB AGC 100 103 - dBµV
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

BF1207,115

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Buy BF1207,115
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors TAPE-7 MOS-RFSS
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New from this manufacturer.
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