BF1207,115

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21 P22-P22

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 28 July 2005 4 of 22

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

6. Thermal characteristics

7. Static characteristics

Fig 1. Power derating curve

T

sp

(°C)

0 20015050 100

001aac741

100

150

50

200

250

P

tot

(mW)

0

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

thermal resistance from junction

to soldering point

240 K/W

Table 7: Static characteristics

T

j

=25

°

C.

Symbol Parameter Conditions Min Typ Max Unit

Per MOSFET; unless otherwise speciﬁed

V

(BR)DSS

drain-source breakdown voltage V

G1-S

=V

G2-S

=0V; I

D

=10µA

ampliﬁer A 6 - - V

ampliﬁer B 6 - - V

V

(BR)G1-SS

gate1-source breakdown voltage V

GS

=V

DS

=0V; I

G1-S

=10mA 6 - 10 V

V

(BR)G2-SS

gate2-source breakdown voltage V

GS

=V

DS

=0V; I

G2-S

=10mA 6 - 10 V

V

F(S-G1)

forward source-gate1 voltage V

G2-S

=V

DS

=0V; I

S-G1

= 10 mA 0.5 - 1.5 V

V

F(S-G2)

forward source-gate2 voltage V

G1-S

=V

DS

=0V; I

S-G2

= 10 mA 0.5 - 1.5 V

V

G1-S(th)

gate1-source threshold voltage V

DS

=5V; V

G2-S

=4V; I

D

= 100 µA 0.3 - 1.0 V

V

G2-S(th)

gate2-source threshold voltage V

DS

=5V; V

G1-S

=5V; I

D

= 100 µA 0.4 - 1.0 V

I

DSX

drain-source current V

G2-S

=4V; V

DS

=5V; R

G1

=68kΩ

ampliﬁer A

[1]

13 - 23 mA

ampliﬁer B

[2]

9 - 19 mA

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 28 July 2005 5 of 22

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

[1] R

G1

connects gate1 (A) to V

GG

= 5 V (see Figure 3).

[2] R

G1

connects gate1 (B) to V

GG

= 0 V (see Figure 3).

I

G1-S

gate1 cut-off current V

G2-S

=V

DS(A)

=0V

ampliﬁer A; V

G1-S(A)

=5V; V

DS(B)

= 0 V - - 50 nA

ampliﬁer B; V

G1-S(A)

=0V; I

D(B)

=0A - - 50 nA

I

G2-S

gate2 cut-off current V

G2-S

=4V; V

G1-S

=V

DS(A)

=V

DS(B)

= 0 V; - - 20 nA

Table 7: Static characteristics

…continued

T

j

=25

°

C.

Symbol Parameter Conditions Min Typ Max Unit

(1) I

D(A)

; R

G1

=47kΩ.

(2) I

D(A)

; R

G1

=68kΩ.

(3) I

D(A)

; R

G1

= 100 kΩ.

(4) I

D(B)

; R

G1

= 100 kΩ.

(5) I

D(B)

; R

G1

=68kΩ.

(6) I

D(B)

; R

G1

=47kΩ.

V

DS(A)

=V

DS(B)

=5V; V

G2-S

=4V; T

j

=25°C.

V

GG

= 5 V: ampliﬁer A is on; ampliﬁer B is off.

V

GG

= 0 V: ampliﬁer A is off; ampliﬁer B is on.

Fig 2. Drain currents of MOSFET A and B as function

of V

GG

Fig 3. Functional diagram

001aac742

8

12

4

16

20

I

D

(mA)

0

V

GG

(V)

054231

(2)

(5)

(4)

(6)

(3)

(1)

001aac881

R

G1

V

GG

G1A

G2

G1B

DA

S

DB

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 28 July 2005 6 of 22

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

8. Dynamic characteristics

8.1 Dynamic characteristics for ampliﬁer A

[1] For the MOSFET not in use: V

G1-S(B)

= 0 V; V

DS(B)

=0V.

[2] Measured in Figure 29 test circuit.

Table 8: Dynamic characteristics for ampliﬁer A

Common source; T

amb

=25

°

C; V

G2-S

=4V; V

DS

=5V; I

D

= 18 mA.

[1]

Symbol Parameter Conditions Min Typ Max Unit

y

fs

 forward transfer admittance T

j

=25°C253040mS

C

iss(G1)

input capacitance at gate1 f = 100 MHz - 2.2 2.7 pF

C

iss(G2)

input capacitance at gate2 f = 1 MHz - 3.5 - pF

C

oss

output capacitance f = 100 MHz - 0.9 - pF

C

rss

reverse transfer capacitance f = 100 MHz - 20 - fF

G

tr

power gain B

S

=B

S(opt)

; B

L

=B

L(opt)

f = 200 MHz; G

S

= 2 mS; G

L

= 0.5 mS 30 34 38 dB

f = 400 MHz; G

S

= 2 mS; G

L

=1mS 26 30 34 dB

f = 800 MHz; G

S

= 3.3 mS; G

L

= 1 mS 21 25 29 dB

NF noise ﬁgure f = 11 MHz; G

S

= 20 mS; B

S

= 0 S - 3.0 - dB

f = 400 MHz; Y

S

=Y

S(opt)

- 1.3 - dB

f = 800 MHz; Y

S

=Y

S(opt)

- 1.4 - dB

Xmod cross-modulation input level for k = 1 %; f

w

= 50 MHz;

f

unw

=60MHz

[2]

at 0 dB AGC 90 - - dBµV

at 10 dB AGC - 90 - dBµV

at 20 dB AGC - 99 - dBµV

at 40 dB AGC 100 105 - dBµV

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21 P22-P22

BF1207,115

Mfr. #:

Manufacturer:

NXP Semiconductors

Description:

RF MOSFET Transistors TAPE-7 MOS-RFSS

Lifecycle:

New from this manufacturer.

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BF1207,115