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BF1207,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P22
9397 750 14955
© Koninklijk
e Philips Electronics N.V
. 2005. All rights reserved.
Product data sheet
Rev
. 01 — 28 J
uly 2005
13 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
8.2.1
Graphs for amplifier B
(1)
V
G2-S
=4V
.
(2)
V
G2-S
= 3.5 V
.
(3)
V
G2-S
=3V
.
(4)
V
G2-S
= 2.5 V
.
(5)
V
G2-S
=2V
.
(6)
V
G2-S
= 1.5 V
.
(7)
V
G2-S
=1V
.
V
DS(B)
=5V
;
V
G1-S(A)
=0V
;
T
j
=2
5
°
C.
(1)
V
G1-S(B)
= 1.7 V
.
(2)
V
G1-S(B)
= 1.6 V
.
(3)
V
G1-S(B)
= 1.5 V
.
(4)
V
G1-S(B)
= 1.4 V
.
(5)
V
G1-S(B)
= 1.3 V
.
(6)
V
G1-S(B)
= 1.2 V
.
(7)
V
G1-S(B)
= 1.1 V
.
V
G2-S
=4V
;
V
G1-S(A)
=0V
;
T
j
=2
5
°
C.
Fig 16.
Amplifier B: transfer characteristics; typical
values
Fig 17.
Amplifier B: output characteristics; typical
values
V
G1-S
(V)
02
1.6
0.8
1.2
0.4
001aac894
10
20
30
I
D
(mA)
0
(4)
(5)
(2)
(3)
(1)
(7)
(6)
001aac895
V
DS
(V)
06
4
2
16
8
24
32
I
D
(mA)
0
(2)
(6)
(7)
(4)
(3)
(5)
(1)
9397 750 14955
© Koninklijk
e Philips Electronics N.V
. 2005. All rights reserved.
Product data sheet
Rev
. 01 — 28 J
uly 2005
14 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
(1)
V
G2-S
=4V
.
(2)
V
G2-S
= 3.5 V
.
(3)
V
G2-S
=3V
.
(4)
V
G2-S
= 2.5 V
.
(5)
V
G2-S
=2V
.
(6)
V
G2-S
= 1.5 V
.
(7)
V
G2-S
=1V
.
V
DS(B)
=5V
;
V
G1-S(A)
=0V
;
T
j
=2
5
°
C.
(1)
V
DS
=5V
.
(2)
V
DS
= 4.5 V
.
(3)
V
DS
=4V
.
(4)
V
DS
= 3.5 V
.
(5)
V
DS
=3V
.
V
G1-S(A)
=0V
;
T
j
=2
5
°
C.
Fig 18.
Amplifier B: forwar
d transfer admittance as a
function of drain current; typical values
Fig 19.
Amplifier B: drain current as function of gate2
v
oltage; typical values
V
DS(B)
=5V
;
V
G1-S(A)
=0V
;
T
j
=2
5
°
C.
V
DS(B)
=5V
;
V
G2-S
=4V
;
V
G1-S(A)
=0V
;
T
j
=2
5
°
C.
Fig 20.
Amplifier B:
drain current
as a function
of drain
source v
oltage; typical values
Fig 21.
Amplifier
B: drain
current
as
a
function of
gate1
current; typical values
I
D
(mA)
03
2
24
81
6
001aac896
20
10
30
40
y
fs
(mS)
0
(1)
(6)
(5)
(4)
(3)
(2)
(7)
V
G2-S
(V)
05
4
23
1
001aac897
8
12
4
16
20
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
001aac898
V
DS
(V)
06
4
2
8
12
4
16
20
I
D(A)
(mA)
0
I
G1
(
µ
A)
−
40
0
−
20
−
10
−
30
001aac899
8
4
12
16
I
D
(mA)
0
9397 750 14955
© Koninklijk
e Philips Electronics N.V
. 2005. All rights reserved.
Product data sheet
Rev
. 01 — 28 J
uly 2005
15 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
V
DS(B)
=5V
;
V
GG
=5V
;
V
DS(A)
=V
G1-S(A)
=0V
;
R
G1(B)
= 150 k
Ω
(connected to V
GG
); f
w
= 50 MHz;
f
unw
= 60 MHz; T
amb
=2
5
°
C; see
Figure 30
.
V
DS(B)
=5V
;
V
GG
=5V
;
V
DS(A)
=V
G1-S(A)
=0V
;
R
G1(B)
= 150 k
Ω
(connected to V
GG
); f = 50 MHz;
T
amb
=2
5
°
C; see
Figure 30
.
Fig 22.
Amplifier B: unwanted v
oltage for 1 %
cross-modulation as a function of gain
reduction; typical values
Fig 23.
Amplifier
B:
typical
gain
reduction
as
a
function
of A
GC voltage; typical v
alues
V
DS(B)
=5V
;
V
GG
=5V
;
V
DS(A)
=V
G1-S(A)
=0V
;
R
G1(B)
=
150
k
Ω
(connected to V
GG
); f = 50 MHz; T
amb
=2
5
°
C; see
Figure 30
.
Fig 24.
Amplifier B: drain current as a function of gain reduction; typical values
001aac900
gain reduction (dB)
06
0
40
20
100
90
110
120
V
unw
(dB
µ
V)
80
V
AGC
(V)
04
3
12
001aac901
30
20
40
10
0
gain
reduction
(dB)
50
001aac902
gain reduction (dB)
06
0
40
20
8
12
4
16
20
I
D
(mA)
0
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P22
BF1207,115
Mfr. #:
Buy BF1207,115
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors TAPE-7 MOS-RFSS
Lifecycle:
New from this manufacturer.
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