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BF1207,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 28 July 2005 16 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
V
DS(B)
=5V; V
G2-S
=4V; V
DS(A)
=V
G1-S(A)
=0V;
I
D(B)
= 14 mA.
V
DS(B)
=5V; V
G2-S
=4V; V
DS(A)
=V
G1-S(A)
=0V;
I
D(B)
= 14 mA.
Fig 25. Amplifier B: input admittance as a function of
frequency; typical values
Fig 26. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
V
DS(B)
=5V; V
G2-S
=4V; V
DS(A)
=V
G1-S(A)
=0V;
I
D(B)
= 14 mA.
V
DS(B)
=5V; V
G2-S
=4V; V
DS(A)
=V
G1-S(A)
=0V;
I
D(B)
= 14 mA.
Fig 27. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical values
Fig 28. Amplifier B: output admittance as a function of
frequency; typical values
001aac903
f (MHz)
10 10
3
10
2
10
−1
1
10
10
2
b
is
, g
is
(mS)
10
−2
b
is
g
is
f (MHz)
10 10
3
10
2
001aac904
10
10
2
|y
fs
|
(mS)
1
−10
−10
2
ϕ
fs
(deg)
−1
|y
fs
|
ϕ
fs
001aac905
10
2
10
10
3
|y
rs
|
(µS)
1
−10
2
−10
−10
3
ϕ
rs
(deg)
−1
f (MHz)
10 10
3
10
2
|y
rs
|
ϕ
rs
001aac906
1
10
−1
10
b
os
, g
os
(mS)
10
−2
f (MHz)
10 10
3
10
2
b
os
g
os
9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 28 July 2005 17 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
8.2.2 Scattering parameters for amplifier B
Table 11: Scattering parameters for amplifier B
V
DS(B)
=5V; V
G2-S
=4V; I
D(B)
= 14 mA; V
DS(A)
=0V;V
G1-S(A)
=0V; T
amb
= 25
°
C; typical values.
f
(MHz)
s
11
s
21
s
12
s
22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
50 0.993 −3.018 3.07 176.04 0.0004 95.97 0.991 −1.39
100 0.992 −6.186 3.07 172.05 0.0011 90.33 0.990 −2.79
200 0.987 −12.43 3.09 164.13 0.0024 85.03 0.988 −5.49
300 0.979 −18.60 3.02 156.28 0.0036 82.94 0.986 −8.21
400 0.969 −24.62 2.99 148.48 0.0046 81.97 0.983 −10.91
500 0.957 −30.72 2.95 140.69 0.0056 81.03 0.980 −13.63
600 0.943 −36.71 2.90 132.87 0.0065 79.77 0.977 −16.40
700 0.927 −42.77 2.86 125.21 0.0074 79.04 0.973 −19.13
800 0.907 −48.91 2.79 117.22 0.0082 79.42 0.969 −21.93
900 0.885 −54.77 2.736 109.29 0.0086 75.47 0.964 −24.85
1000 0.858 −61.01 2.675 101.18 0.0092 73.48 0.958 −27.75
9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 28 July 2005 18 of 22
Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
9. Test information
Fig 29. Cross-modulation test set-up for amplifier A
50 Ω
10 kΩ
R
GEN
50 Ω
50 Ω
R
G1
4.7 nF
4.7 nF
4.7 nF
G2
S
G1A DA
DB
4.7 nF
4.7 nF
4.7 nF
G1B
BF1207
V
GG
5 V
V
DS(A)
5 V
V
DS(B)
5V
V
AGC
L2
2.2 µH
L1
2.2 µH
R
L
50 Ω
001aac907
V
i
Fig 30. Cross-modulation test set-up for amplifier B
50 Ω
10 kΩ
R
GEN
50 Ω
R
L
50 Ω
50 Ω
R
G1
4.7 nF
4.7 nF
4.7 nF
G2
S
G1A DA
DB
4.7 nF
4.7 nF
4.7 nF
G1B
BF1207
V
GG
0 V
V
DS(A)
5 V
V
DS(B)
5V
V
AGC
L2
2.2 µH
L1
2.2 µH
001aac908
V
i
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

BF1207,115

Mfr. #:
Buy BF1207,115
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors TAPE-7 MOS-RFSS
Lifecycle:
New from this manufacturer.
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