LTC3634
10
3634fc
For more information www.linear.com/LTC3034
BLOCK DIAGRAM
3634 BD
+
SWITCH
LOGIC
AND
ANTI-
SHOOT
THROUGH
R
S
3V
BOOST
M1
M2
SW
PGND
150k
Q
+
t
ON
=
V
VON
I
ON
I
ON
CONTROLLER
A
V
= 1
V
IN
V
IN
V
ON
I
CMP
I
REV
RUN
I
ON
ON
1.22V
OSC1
CHANNEL 1
CHANNEL 2 (SAME AS CHANNEL 1)
+
INTV
CC
RUN
+
0.552V
TRACKSS
TRACKSS
MODE/SYNC
VDDQIN
INTV
CC
+
+
+
0.6V
REF
0.648V
OV
EA
UV
1.4µA
INTERNAL
SOFT-START
INTERNAL
SOFT-START
INTV
CC
+
+
OV
UV
MODE
SELECT
3.3V
REG
IDEAL DIODES
IDEAL DIODES
PV
IN1
BURSTFC
V
FB1
OSC
PLL-SYNC
0.48V AT START-UP
0.10V AFTER START-UP
VDDQIN • 0.54
VDDQIN • 0.46
OSC
OSC1
OSC2
PHASE
SELECT
+
+
VTTR
V
FB2
ITH2
PGOOD2
PGOOD1
ITH1
PHMODE
RT
C
BOOST
L1
C
OUT
C
IN
R2
R1
C
SS
C
VCC
C
C2
R
C2
C
C1
R
C1
R
RT
TG
BG
SENSE
SENSE
+
EA
VDDQIN • 0.5
LTC3634
11
3634fc
For more information www.linear.com/LTC3034
OPERATION
The LTC3634 is a dual-channel, current mode monolithic
step-down regulator designed to provide high efficiency
power conversion for DDR memory supplies and bus ter-
mination. Its unique controlled on-time architecture allows
extremely low step-down ratios while maintaining a fast,
constant switching frequency. Each channel is enabled by
raising the voltage on the RUN pin above 1.22V nominally.
Main Control Loop
In normal operation, the internal top power MOSFET is
turned on for a fixed interval determined by a one-shot
timer (ON signal in the Block Diagram). When the top
power MOSFET turns off, the bottom power MOSFET turns
on until the current comparator I
CMP
trips, thus restarting
the one-shot timer and initiating the next cycle. Inductor
current is measured by sensing the voltage drop across
the bottom power MOSFET. The voltage on the ITH pin sets
the comparator threshold corresponding to inductor valley
current. The error amplifier EA adjusts this ITH voltage
by comparing the feedback signal V
FB
(derived from the
output voltage) to an internal 0.6V reference voltage (chan-
nel 1) or the VTTR voltage (channel 2). If the load current
increases, it causes a drop in the feedback voltage relative
to the reference voltage. The ITH voltage then rises until the
average inductor current matches that of the load current.
The switching frequency is determined by the value of the
R
T
resistor, which programs the current for the internal
oscillator. An internal phase-locked loop servos the one-
shot timer (ON signal) such that the internal oscillator
edge phase-locks to the SW node edge, thus forcing a
constant switching frequency. This unique controlled
on-time architecture also allows the switching frequency
to be synchronized to an external clock source when it
is applied to the MODE/SYNC pin. Channel 1 defaults to
forced continuous operation once the clock signal is ap-
plied (channel 2 is always in forced continuous operation).
VTTR Output Buffer
The VTTR pin outputs a voltage equal to one half of
VDDQIN. It is capable of sourcing/sinking 10mA and
driving capacitive loads up to 0.01µF. A small series
resistance(1Ω) between the output and the load further
increases the amount of capacitance that the amplifier can
drive. The error amplifier for channel 2 uses this voltage
as its reference voltage.
High Efficiency Burst Mode Operation
At light load currents, the inductor current can drop to zero
and become negative. In Burst Mode operation (available
only on channel 1), a current reversal comparator (I
REV
)
detects the negative inductor current and shuts off the bot-
tom power MOSFET, resulting in discontinuous operation
and increased efficiency. Both power MOSFETs will remain
off until the ITH voltage rises above the zero current level to
initiate another cycle. During this time, the output capacitor
supplies the load current and the part is placed into a low
current sleep mode. Burst Mode operation is disabled by ty-
ing the MODE/SYNC pin to ground, which forces continuous
synchronous operation regardless of output load current.
Power Good Status Output
The PGOOD open-drain output will be pulled low if the
regulator output exits a ±8% window around the regulation
point. This threshold has 15mV of hysteresis relative to
the V
FB
pin. To prevent unwanted PGOOD glitches during
transients or dynamic V
OUT
changes, the LTC3634 PGOOD
falling edge includes a filter time of approximately 40μs.
For the V
TT
output (channel 2), VTTR is the regulation
point. The PGOOD2 pin will always be low when the VTTR
output voltage is less than 300mV.
V
IN
Overvoltage Protection
In order to protect the internal power MOSFET devices
against long transient voltage events, the LTC3634 con-
stantly monitors each V
IN
pin for an overvoltage condi-
tion. When V
IN
rises above 17.5V, the regulator suspends
operation by shutting off both power MOSFETs on the
corresponding channel. Once V
IN
drops below 16.5V, the
regulator immediately resumes normal operation. The
regulator does not execute its soft-start function when
exiting an overvoltage condition.
Out-Of-Phase Operation
Tying the PHMODE pin high sets the SW2 falling edge to
be 180° out-of-phase with the SW1 falling edge. There is
LTC3634
12
3634fc
For more information www.linear.com/LTC3034
APPLICATIONS INFORMATION
A general LTC3634 application circuit is shown in Figure 1.
External component selection is largely driven by the load
requirement and switching frequency. Component selec-
tion typically begins with selecting the feedback resistors
to set the desired output voltage. Next the inductor L and
resistor R
T
are selected. Once the inductor is chosen, the
input capacitor (C
IN
) and the output capacitor (C
OUT
) can
be selected. Finally, the loop compensation components
may be selected to stabilize the step-down regulator. The
remaining optional external components can then be se-
lected for functions such as loop compensation, TRACKSS,
V
IN
, UVLO, and PGOOD.
Programming Switching Frequency
Selection of the switching frequency is a trade-off between
efficiency and component size. High frequency operation
allows the use of smaller inductor and capacitor values.
Operation at lower frequencies improves efficiency by
reducing internal gate charge losses but generally requires
larger inductance and capacitance values to maintain low
output ripple voltage. Connecting a resistor from the RT
pin to SGND programs the switching frequency (f) between
500kHz and 4MHz according to the following formula:
R
RT
=
3.2E
11
where R
RT
is in Ω and f is in Hz.
RUN1
RUN2
RT
INTV
CC
PHMODE
MODE/SYNC
ITH1
ITH2
LTC3634
3634 F01
L1
R2
R1
0.1µF
C3
0.01µF
0.1µF
PGNDSGND
BOOST1
SW1
V
ON1
VDDQIN
V
FB1
BOOST2
SW2
V
FB2
V
ON2
VTTR
V
IN1
V
IN
3.6V TO 15V
V
IN2
L2
R
COMP2
R
RT
C
OUT1
V
DDQ
C
OUT2
V
TT
C5
(OPT)
C
COMP2
R
COMP1
C
COMP1
C2
2.2µF
C1
C4
(OPT)
V
REF
Figure 1. Typical Application Circuit for DDR Memory Supply
a significant advantage to running both channels out-of-
phase. When running the channels in phase, both topside
MOSFETs are on simultaneously, causing large current
pulses to be drawn from the input capacitor and supply
at the same time. When running the LTC3634 channels
out-of-phase, the large current pulses are interleaved,
effectively reducing the amount of time the pulses overlap.
Thus, the total RMS input current is decreased, which both
relaxes the capacitance requirements for the V
IN
bypass
capacitors and reduces the voltage noise on the supply
line. One potential disadvantage to this configuration occurs
when one channel is operating at 50% duty cycle. In this
situation, SW node transitions can potentially couple from
one channel to the other, resulting in frequency jitter on one
or both channels. This effect can be mitigated with a well
designed board layout. Alternatively, tying PHMODE low
changes the phase difference to be 90°, which may prevent
SW1 and SW2 from transitioning at the same point in time.
OPERATION

LTC3634IFE#TRPBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators 15V Dual 3A Monolithic Step Down Regulator for DDR Power
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union