11AA02E48-I/SN Datasheet 11AA02E64T-I/TT, 11AA02E48T-I/TT, 11AA02E48-I/SN | P1-P3

 2008-2016 Microchip Technology Inc. DS20002122D-page 1

11AA02E48/11AA02E64

Device Selection Table

Features

• Pre-Programmed Globally Unique, 48-Bit or

64-Bit Node Address

• Compatible with EUI-48

™

and EUI-64

™

• Single I/O, UNI/O

Serial Interface Bus

• Low-Power CMOS Technology:

- 1 mA active current, typical

- 1 µA standby current, maximum

• 256 x 8-Bit Organization

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kbps Maximum Bit Rate – Equivalent to

100 kHz Clock Frequency

• Self-Timed Write Cycle (including Auto-Erase)

• Page-Write Buffer for up to 16 Bytes

• STATUS Register for Added Control:

- Write Enable Latch bit

- Write-In-Progress bit

• Block Write Protection:

- Protect none, 1/4, 1/2 or all of array

• Built-in Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

• High Reliability:

- Endurance: 1,000,000 erase/write cycles

- Data retention: >200 years

- ESD protection: >4,000V

• 3-Lead SOT-23 and 8-Lead SOIC Packages

• Pb-Free and RoHS Compliant

• Available Temperature Ranges:

Description

The Microchip Technology Inc.

11AA02E48/11AA02E64 (11AA02EXX

(1)

) device is a

2 Kbit Serial Electrically Erasable PROM. The device is

organized in blocks of x8-bit memory and support the

patented

(2)

single I/O UNI/O

serial bus. By using

Manchester encoding techniques, the clock and data

are combined into a single, serial bit stream (SCIO),

where the clock signal is extracted by the receiver to

correctly decode the timing and value of each bit.

Low-voltage design permits operation down to 1.8V,

with standby and active currents of only 1 µA and

1 mA, respectively.

The 11AA02EXX is available in standard 8-lead

SOIC and 3-lead SOT-23 packages.

Package Types (not to scale)

Pin Function Table

Part Number

Density

(bits)

VCC Range

Page Size

(Bytes)

Temp.

Ranges

Packages Node Address

11AA02E48 2K 1.8V-5.5V 16 I SN, TT EUI-48

™

11AA02E64 2K 1.8V-5.5V 16 I SN, TT EUI-64

™

- Industrial (I): -40°C to +85°C

Note 1: 11AA02EXX is used in this document as

a generic part number for the 11AA02E48

and 11AA02E64 devices.

2: Microchip’s UNI/O

Bus products are

covered by the following patents issued

in the U.S.A.: 7,376,020 and 7,788,430.

Name Function

SCIO

Serial Clock, Data Input/Output

SS Ground

CC Supply Voltage

VCC

SCIO

3-Lead SOT-23

(TT)

SCIO

SOIC

(SN)

2K UNI/O

Serial EEPROMs with EUI-48

™

or EUI-64

™

Node Identity

11AA02E48/11AA02E64

DS20002122D-page 2  2008-2016 Microchip Technology Inc.

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

(†)

VCC.............................................................................................................................................................................6.5V

SCIO w.r.t. V

SS.................................................................................................................................... -0.6V to VCC+1.0V

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias.................................................................................................................-40°C to 85°C

ESD protection on all pins..........................................................................................................................................4 kV

TABLE 1-1: DC CHARACTERISTICS

† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

DC CHARACTERISTICS

Electrical Characteristics:

Industrial (I): VCC = 2.5V to 5.5V TA = -40°C to +85°C

CC = 1.8V to 2.5V TA = -20°C to +85°C

Param.

No.

Symbol Characteristic Min. Max. Units Test Conditions

D1 V

IH High-Level Input

Voltage

0.7 VCC VCC+1 V

D2 V

IL Low-Level Input

Voltage

-0.3 0.3 VCC VVCC ≥ 2.5V

-0.3 0.2 V

CC VVCC <2.5V

D3 VHYS Hysteresis of Schmitt

Trigger Inputs

(SCIO)

0.05 Vcc — V VCC ≥ 2.5V (Note 1)

D4 VOH High-Level Output

Voltage

VCC -0.5 — V IOH =-300µA, VCC =5.5V

VCC -0.5 — V IOH = -200 µA, Vcc = 2.5V

D5 V

OL Low-Level Output

Voltage

—0.4VIOI=300µA, VCC =5.5V

—0.4VIOI = 200 µA, Vcc = 2.5V

D6 IO Output Current Limit

(Note 2)

—±4mAVCC = 5.5V (Note 1)

—±3mAVcc = 2.5V (Note 1)

D7 I

LI Input Leakage

Current (SCIO)

—±1µAVIN = VSS or VCC

D8 CINT Internal Capacitance

(all inputs and

outputs)

—7pFT

A = 25°C, FCLK = 1 MHz,

CC = 5.0V (Note 1)

D9 I

CCREAD Read Operating

Current

—3mAVCC = 5.5V, FBUS =100kHz,

B = 100 pF

—1mAV

CC = 2.5V, FBUS =100kHz,

B = 100 pF

D10 ICCWRITE Write Operating

Current

—5mAVCC =5.5V

—3mAV

CC =2.5V

D11 Iccs Standby Current — 1 µA V

CC =5.5V, TA =85°C

D12 I

CCI Idle Mode Current — 50 µA VCC =5.5V

Note 1: This parameter is periodically sampled and not 100% tested.

2: The SCIO output driver impedance will vary to ensure IO is not exceeded.

 2008-2016 Microchip Technology Inc. DS20002122D-page 3

11AA02E48/11AA02E64

TABLE 1-3: AC TEST CONDITIONS

TABLE 1-2: AC CHARACTERISTICS

AC CHARACTERISTICS

Electrical Characteristics:

Industrial (I): VCC = 2.5V to 5.5V TA = -40°C to +85°C

CC = 1.8V to 2.5V TA = -20°C to +85°C

Param.

No.

Symbol Characteristic Min. Max. Units Test Conditions

BUS Serial Bus

Frequency

10 100 kHz

E Bit Period 10 100 µs

3TIJIT Input Edge Jitter

To l er an c e

— ±0.06 UI Note 2

DRIFT Serial Bus

Frequency Drift Rate

To l er an c e

— ±0.50 % per byte

DEV Serial Bus

Frequency Drift Limit

— ±5 % per command

OJIT Output Edge Jitter — ±0.25 UI Note 2

R SCIO Input Rise

Time (Note 1)

— 100 ns

F SCIO Input Fall Time

(Note 1)

— 100 ns

STBY Standby Pulse Time 600 — µs

10 TSS Start Header Setup

Time

10 — µs

11 T

HDR Start Header Low

Pulse Time

5— µs

12 T

SP Input Filter Spike

Suppression (SCIO)

—50 ns Note 1

13 T

WC Write Cycle Time

(byte or page)

— 5 ms Write, WRSR commands

10 ms ERAL, SETAL commands

14 Endurance (per

page)

1M — cycles 25°C, V

CC =5.5V (Note 3)

Note 1: This parameter is periodically sampled and not 100% tested.

2: A Unit Interval (UI) is equal to 1-bit period (T

E) at the current bus frequency.

3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific

application, please consult the Total Endurance

™

Model which can be obtained on Microchip’s website:

www.microchip.com.

AC Waveform

VLO = 0.2V

HI = VCC - 0.2V

L = 100 pF

Timing Measurement Reference Level

Input 0.5 V

Output 0.5 VCC

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21 P22-P24 P25-P27 P28-P30 P31-P32

11AA02E48-I/SN

Mfr. #:

Buy 11AA02E48-I/SN

Manufacturer:

Microchip Technology

Description:

EEPROM 2K, 256x8, 1.8V MAC Addressable

Lifecycle:

New from this manufacturer.

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