SI5513CDC-T1-GE3 Datasheet SI5513CDC-T1-GE3, SI5513CDC-T1-E3 | P1-P3

Vishay Siliconix

Si5513CDC

Document Number: 68806

S10-0547-Rev. C, 08-Mar-10

www.vishay.com

1

N- and P-Channel 20 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFETs

• 100 % R

g

Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

a

Q

g

(Typ.)

N-Channel 20

0.055 at V

GS

= 4.5 V

4

g

2.6 nC

0.085 at V

GS

= 2.5 V

4

g

P-Channel - 20

0.150 at V

GS

= - 4.5 V

- 3.7

3.6 nC

0.255 at V

GS

= - 2.5 V

- 2.9

Marking Code

EG XXX

Lot Traceability

and Date Code

Part # Code

Bottom View

S

1

G

1

S

2

G

2

D

1

D

1

D

2

D

2

1

1206-8 ChipFET

®

Ordering Information: Si5513CDC-T1-E3 (Lead (Pb)-free)

Si5513CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

D

1

G

1

S

1

S

2

G

2

D

2

P-Channel MOSFET

Notes:

a. Based on T

C

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequade bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 115 °C/W for N-Channel and 130 °C/W for P-Channel.

g. Package limited.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol N-Channel P-Channel Unit

Drain-Source Voltage

V

DS

20 - 20

V

Gate-Source Voltage

V

GS

± 12

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

4

g

- 3.7

A

T

C

= 70 °C

4

g

- 3.0

T

A

= 25 °C

4

b, c, g

- 2.4

b, c

T

A

= 70 °C

3.5

b, c

- 1.9

b, c

Pulsed Drain Current

I

DM

10 - 8

Source Drain Current Diode Current

T

C

= 25 °C

I

S

2.6 - 2.6

T

A

= 25 °C

1.4

b, c

- 1.7

b, c

Maximum Power Dissipation

T

C

= 25 °C

P

D

3.1 3.1

W

T

C

= 70 °C

2.0 2.0

T

A

= 25 °C

1.7

b, c

1.3

b, c

T

A

= 70 °C

1.1

b, c

0.8

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol

N-Channel P-Channel

Unit Typ. Max. Typ. Max.

Maximum Junction-to-Ambient

b, f

t ≤ 5 s

R

thJA

62 74 77 95

°C/W

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

32 40 33 40

www.vishay.com

2

Document Number: 68806

S10-0547-Rev. C, 08-Mar-10

Vishay Siliconix

Si5513CDC

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

N-Ch 20

V

GS

= 0 V, I

D

= - 250 µA

P-Ch - 20

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 µA

N-Ch 23.7

mV/°C

I

D

= - 250 µA

P-Ch - 19.5

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

I

D

= 250 µA

N-Ch - 3.5

I

D

= - 250 µA

P-Ch 2.8

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

N-Ch 0.6 1.5

V

DS

= V

GS

, I

D

= - 250 µA

P-Ch - 0.6 - 1.5

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 12 V

N-Ch 100

nA

P-Ch - 100

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 20 V, V

GS

= 0 V

N-Ch 1

µA

V

DS

= - 20 V, V

GS

= 0 V

P-Ch - 1

V

DS

= 20 V, V

GS

= 0 V, T

J

= 55 °C

N-Ch 10

V

DS

= - 20 V, V

GS

= 0 V, T

J

= 55 °C

P-Ch - 10

On-State Drain Current

b

I

D(on)

V

DS

≥ 5 V, V

GS

= 4.5 V

N-Ch 10

A

V

DS

≤ - 5 V, V

GS

= - 4.5 V

P-Ch - 8

Drain-Source On-State Resistance

b

R

DS(on)

V

GS

= 4.5 V, I

D

= 4.4 A

N-Ch 0.045 0.055

Ω

V

GS

= - 4.5 V, I

D

= - 2.4 A

P-Ch 0.120 0.150

V

GS

= 2.5 V, I

D

= 3.6 A

N-Ch 0.065 0.085

V

GS

= - 2.5 V, I

D

= - 1.9 A

P-Ch 0.204 0.255

Forward Transconductance

b

g

fs

V

DS

= 10 V, I

D

= 4.4 A

N-Ch 12

S

V

DS

= - 10 V, I

D

= - 2.4 A

P-Ch 5

Dynamic

a

Input Capacitance

C

iss

N-Channel

V

DS

= 10 V, V

GS

= 0 V, f = 1 MHz

P-Channel

V

DS

= - 10 V, V

GS

= 0 V, f = 1 MHz

N-Ch 285

pF

P-Ch 252

Output Capacitance

C

oss

N-Ch 65

P-Ch 62

Reverse Transfer Capacitance

C

rss

N-Ch 30

P-Ch 45

Total Gate Charge

Q

g

V

DS

= 10 V, V

GS

= 5 V, I

D

= 4.4 A

N-Ch 2.8 4.2

nC

V

DS

= - 10 V, V

GS

= - 5 V, I

D

= - 2.4 A

P-Ch 3.9 5.6

N-Channel

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 4.4 A

P-Channel

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 2.4 A

N-Ch 2.6 3.9

P-Ch 3.6 5.4

Gate-Source Charge

Q

gs

N-Ch 0.7

P-Ch 0.6

Gate-Drain Charge

Q

gd

N-Ch 0.5

P-Ch 1.2

Gate Resistance

R

g

f = 1 MHz

N-Ch 0.6 3 6

Ω

P-Ch 1.3 6.5 13

Document Number: 68806

S10-0547-Rev. C, 08-Mar-10

www.vishay.com

3

Vishay Siliconix

Si5513CDC

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Dynamic

a

Tu r n - On D e l ay T i m e

t

d(on)

N-Channel

V

DD

= 10 V, R

L

= 2.9 Ω

I

D

≅ 3.5 A, V

GEN

= 10 V, R

g

= 1 Ω

P-Channel

V

DD

= - 10 V, R

L

= 5.3 Ω

I

D

≅ - 1.9 A, V

GEN

= - 10 V, R

g

= 1 Ω

N-Ch 5 10

ns

P-Ch 4 8

Rise Time

t

r

N-Ch 10 20

P-Ch 12 18

Turn-Off Delay Time

t

d(off)

N-Ch 14 21

P-Ch 15 23

Fall Time

t

f

N-Ch 6 12

P-Ch 6 12

Tu r n - On D e l a y T i m e

t

d(on)

N-Channel

V

DD

= 10 V, R

L

= 2.9 Ω

I

D

≅ 3.5 A, V

GEN

= 4.5 V, R

g

= 1 Ω

P-Channel

V

DD

= - 10 V, R

L

= 5.3 Ω

I

D

≅ - 1.9 A, V

GEN

= - 4.5 V, R

g

= 1 Ω

N-Ch 8 16

P-Ch 19 29

Rise Time

t

r

N-Ch 9 18

P-Ch 40 60

Turn-Off Delay Time

t

d(off)

N-Ch 16 24

P-Ch 18 27

Fall Time

t

f

N-Ch 8 16

P-Ch 8 16

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

N-Ch 2.6

A

P-Ch - 2.6

Pulse Diode Forward Current

a

I

SM

N-Ch 10

P-Ch - 8

Body Diode Voltage

V

SD

I

S

= 3.5 A, V

GS

= 0 V

N-Ch 0.8 1.2

V

I

S

= - 1.9 A, V

GS

= 0 V

P-Ch - 0.8 - 1.2

Body Diode Reverse Recovery Time

t

rr

N-Channel

I

F

= 3.5 A, dI/dt = 100 A/µs, T

J

= 25 °C

P-Channel

I

F

= - 1.9 A, dI/dt = - 100 A/µs, T

J

= 25 °C

N-Ch 10 15

ns

P-Ch 15 22.5

Body Diode Reverse Recovery Charge

Q

rr

N-Ch 3 4.5

nC

P-Ch 9 13.5

Reverse Recovery Fall Time

t

a

N-Ch 6

ns

P-Ch 10

Reverse Recovery Rise Time

t

b

N-Ch 4

P-Ch 5

SI5513CDC-T1-GE3

SI5513CDC-T1-GE3

Products related to this Datasheet