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SI5513CDC-T1-GE3
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
7
Vishay Siliconix
Si5513CDC
N-CHANNEL TYP
ICAL CHARACTE
RISTICS
25 °C, unle
ss otherwise noted
Normalized Thermal T
ransient Impedance, Junction
-to-Ambient
10
-3
10
-2
1
10
1000
10
-1
10
-4
100
0.2
0.1
S
qu
are
W
a
v
eP
u
lse D
u
ration (s)
N
ormalized Effecti
v
e T
ransient
Thermal Impedance
1
0.1
0.01
t
1
t
2
N
otes:
P
DM
1. D
u
ty Cycle, D =
2. Per Unit Base = R
thJA
= 95 °C/
W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. S
u
rface Mo
u
nted
D
u
ty Cycle = 0.5
Single P
u
lse
0.02
0.05
Normalized Thermal Transient Impedan
ce, Junction-to-Foot
1
0.1
0.01
0.2
D
u
ty Cycle = 0.5
S
qu
are
W
a
v
eP
u
lse D
u
ration (s)
N
ormalized Effecti
v
e T
ransient
Thermal Impedance
10
-3
10
-2
1
10
-1
10
-4
0.05
0.02
Single P
u
lse
0.1
www.vishay.com
8
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
Vishay Siliconix
Si5513CDC
P-CHANNEL TYPICAL CHA
RACTERISTICS
25 °C, unless
otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
012345
V
DS
-
Drain-to-
So
u
rce
V
oltage (
V
)
- Drain C
u
rrent (A)
I
D
V
GS
=5
V
thr
u
3
V
V
GS
=1
.
5
V
V
GS
=2
V
V
GS
=2
.
5
V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0246
8
- On-Resistance (
Ω
)
R
DS(on)
I
D
-
Drain C
u
rrent (A)
V
GS
=2
.
5
V
V
GS
=4
.
5
V
0
2
4
6
8
10
0246
8
- Gate-to-So
u
rce
V
oltage (
V
)
Q
g
-
T
otal Gate Charge (nC)
V
GS
V
DS
=1
6
V
I
D
=2
.
4A
V
DS
=1
0
V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction
Temperature
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
V
GS
- Gate
-to-So
u
rce
V
oltage (
V
)
- Drain C
u
rrent (A)
I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
=-
5
5
°
C
0
90
1
8
0
270
360
450
04
8
12
16
20
C
iss
V
DS
-
Drain-to-
So
u
rce
V
oltage (
V
)
C - Capacitance (pF)
C
oss
C
rss
0.6
0.
8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
T
J
-J
u
nction T
emperat
u
re (°C)
(
N
ormalized)
- On-Resistance
R
DS(on)
V
GS
=
- 4.5
V
;I
D
=-
2
.
4
A
V
GS
=
- 2.5
V
;I
D
=
- 1.9 A
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
9
Vishay Siliconix
Si5513CDC
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0
.
00
.
20
.
40
.
60
.
8
1.0
1.2
T
J
= 150 °C
V
SD
-S
o
u
rce-to-Drain
V
oltage (
V
)
- So
u
rce C
u
rrent (A)
I
S
T
J
= 25 °C
0.6
0.7
0.
8
0.9
1.0
1.1
1.2
- 50
- 25
0
25
50
75
100
125
150
I
D
= 250
µ
A
(
V
)
V
GS(th)
T
J
-
T
emperat
u
re (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.06
0.12
0.1
8
0.24
0.30
0246
8
10
12
- On-Resistance (
Ω
)
R
DS(on)
V
GS
- Gate
-to-So
u
rce
V
oltage (
V
)
T
J
=2
5
°
C
T
J
= 125 °C
I
D
=
- 2.4 A
0
10
20
30
40
50
60
Po
w
er (
W
)
Time (s)
1
100
0.01
0.001
0.0001
10
0.1
Safe Operating Area, Junction-to-Case
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
*
V
GS
>
minim
u
m
V
GS
at
w
hich R
DS(on)
is
specified
-
Drain C
u
rrent (A)
I
D
10
0.1
0.1
1
10
1
T
A
= 25 °C
Single P
u
lse
1m
s
10 ms
100 ms
0.01
1s
,1
0s
DC
B
V
DSS Limited
100
100
µ
s
Limited
b
yR
DS(on)*
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
SI5513CDC-T1-GE3
Mfr. #:
Buy SI5513CDC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 12V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
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