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SI5513CDC-T1-GE3
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
www.vishay.com
4
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
Vishay Siliconix
Si5513CDC
N-CHANNEL TYPICAL CHARAC
TERISTICS
25 °C, unless oth
erwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
10
012345
V
DS
-
Drain-to-
So
u
rce
V
oltage (
V
)
- Drain C
u
rrent (A)
I
D
V
GS
=5
V
thr
u
2.5
V
V
GS
=1
.
5
V
V
GS
=2
V
0.00
0.02
0.04
0.06
0.0
8
0.10
0246
8
10
- On-Resistance (
Ω
)
R
DS(on)
I
D
-
Drain C
u
rrent (A)
V
GS
=2
.
5
V
V
GS
=4
.
5
V
0
2
4
6
8
10
0123456
- Gate-to-So
u
rce
V
oltage (
V
)
Q
g
-
T
otal Gate Charge (nC)
V
GS
V
DS
=1
6
V
I
D
=4
.
4A
V
DS
=1
0
V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction
Temperature
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
- Gate
-to-So
u
rce
V
oltage (
V
)
- Drain C
u
rrent (A)
I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
=-
5
5
°
C
0
8
0
160
240
320
400
04
8
12
16
20
C
iss
V
DS
-
Drain-to-
So
u
rce
V
oltage (
V
)
C - Capacitance (pF)
C
oss
C
rss
0.6
0.
8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
T
J
-J
u
nction T
emperat
u
re (°C)
(
N
ormalized)
- On-Resistance
R
DS(on)
V
GS
=4
.
5
V
;I
D
=4
.
4A
V
GS
=2
.
5
V
;I
D
=3
.
6A
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
5
Vishay Siliconix
Si5513CDC
N-CHANNEL TYP
ICAL CHARACTE
RISTICS
25 °C, unle
ss otherwise noted
Source-Drain Diode Forward Voltage
Threshold Volt
age
0.1
1
10
100
0
.
00
.
20
.
40
.
60
.
8
1.0
1.2
T
J
= 150 °C
V
SD
-S
o
u
rce-to-Drain
V
oltage (
V
)
- So
u
rce C
u
rrent (A)
I
S
T
J
= 25 °C
0.5
0.7
0.9
1.1
1.3
- 50
- 25
0
25
50
75
100
125
150
I
D
= 250
µ
A
(
V
)
V
GS(th)
T
J
-
T
emperat
u
re (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.02
0.04
0.06
0.0
8
0.10
0246
8
10
12
- On-Resistance (
Ω
)
R
DS(on)
V
GS
- Gate
-to-So
u
rce
V
oltage (
V
)
T
J
= 25 °C
T
J
= 125 °C
I
D
=4
.
4A
0
5
10
15
20
25
30
10
-4
10
-3
10
-2
10
-1
11
0
Time (s)
Po
w
er (
W
)
Safe Operating Area, Junction-to-Ambient
V
DS
-
Drain-to-So
u
rce
V
oltage (
V
)
*
V
GS
>
minim
u
m
V
GS
at
w
hich R
DS(on)
is
specified
100
1
0.1
1
10
100
0.01
10
-
Drain C
u
rrent (A)
I
D
0.1
T
A
= 25 °C
Single P
u
lse
100 ms
1s
,1
0s
DC
Limited
b
yR
DS(on)
*
B
V
DSS Limited
1m
s
100
µ
s
10 ms
www.vishay.com
6
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
Vishay Siliconix
Si5513CDC
N-CHANNEL TYPICAL CHARAC
TERISTICS
25 °C, unless oth
erwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional
heatsinking is used. It is used to deter
mine the current rating,
when this rating
falls below the package
limit.
Current Derating*
0
2
4
6
8
0
2
55
07
5
1
0
0
1
2
5
1
5
0
T
C
-
Case T
emperat
u
re (°C)
I
D
-
Drain C
u
rrent (A)
Package Limited
Power, Junc
tion-to-Foot
0.0
0.
8
1.6
2.4
3.2
4.0
0
25
50
75
100
125
150
T
C
-
Case T
emperat
u
re (°C)
Po
w
er (
W
)
Power, Junction-to-Am
bient
0.0
0.3
0.6
0.9
1.2
1.5
0
25
50
75
100
125
150
T
A
-A
m
b
ient T
emperat
u
re (°C)
Po
w
er (
W
)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
SI5513CDC-T1-GE3
Mfr. #:
Buy SI5513CDC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 12V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
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