CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Document #: 38-05615 Rev. *C Page 16 of 25
Identification Register Definitions
Instruction Field
Value
DescriptionCY7C1410AV18 CY7C1425AV18 CY7C1412AV18 CY7C1414AV18
Revision Number
(31:29)
000 000 000 000 Version number.
Cypress Device ID
(28:12)
11010011010000111 11010011010001111 11010011010010111 11010011010100111 Defines the type of
SRAM.
Cypress JEDEC ID
(11:1)
00000110100 00000110100 00000110100 00000110100 Unique identifi-
cation of SRAM
vendor.
ID Register Presence
(0)
1 1 1 1 Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name Bit Size
Instruction 3
Bypass 1
ID 32
Boundary Scan Cells 109
Instruction Codes
Instruction Code Description
EXTEST 000 Captures the Input/Output ring contents.
IDCODE 001 Loads the ID register with the vendor ID code and places the register between
TDI and TDO. This operation does not affect SRAM operation.
SAMPLE Z 010 Captures the Input/Output contents. Places the boundary scan register
between TDI and TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED 011 Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD 100 Captures the Input/Output ring contents. Places the boundary scan register
between TDI and TDO. Does not affect the SRAM operation.
RESERVED 101 Do Not Use: This instruction is reserved for future use.
RESERVED 110 Do Not Use: This instruction is reserved for future use.
BYPASS 111 Places the bypass register between TDI and TDO. This operation does not
affect SRAM operation.
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CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Document #: 38-05615 Rev. *C Page 17 of 25
Boundary Scan Order
Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID
0 6R 28 10G 56 6A 84 1J
16P 29 9G 57 5B 85 2J
2 6N 30 11F 58 5A 86 3K
3 7P 31 11G 59 4A 87 3J
47N329F605C882K
5 7R 33 10F 61 4B 89 1K
6 8R 34 11E 62 3A 90 2L
7 8P 35 10E 63 2A 91 3L
8 9R 36 10D 64 1A 92 1M
9 11P 37 9E 65 2B 93 1L
10 10P 38 10C 66 3B 94 3N
11 10N 39 11D 67 1C 95 3M
12 9P 40 9C 68 1B 96 1N
13 10M 41 9D 69 3D 97 2M
14 11N 42 11B 70 3C 98 3P
15 9M 43 11C 71 1D 99 2N
16 9N 44 9B 72 2C 100 2P
17 11L 45 10B 73 3E 101 1P
18 11M 46 11A 74 2D 102 3R
19 9L 47 10A 75 2E 103 4R
20 10L 48 9A 76 1E 104 4P
21 11K 49 8B 77 2F 105 5P
22 10K 50 7C 78 3F 106 5N
23 9J 51 6C 79 1G 107 5R
24 9K 52 8A 80 1F 108 Internal
25 10J 53 7A 81 3G
26 11J 54 7B 82 2G
27 11H 55 6B 83 1H
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CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Document #: 38-05615 Rev. *C Page 18 of 25
Power-Up Sequence in QDR-II SRAM
[13, 14]
QDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
Power-Up Sequence
Apply power and drive DOFF LOW (All other inputs can be
HIGH or LOW)
—Apply V
DD
before V
DDQ
—Apply V
DDQ
before V
REF
or at the same time as V
REF
After the power and clock (K, K, C, C) are stable take DOFF
HIGH
The additional 1024 cycles of clocks are required for the
DLL to lock.
DLL Constraints
DLL uses either K or C clock as its synchronizing input.The
input should have low phase jitter, which is specified as
t
KC Var
.
The DLL will function at frequencies down to 80MHz.
If the input clock is unstable and the DLL is enabled, then
the DLL may lock to an incorrect frequency, causing
unstable SRAM behavior
.
Notes:
13.It is recommended that the DOFF
pin be pulled HIGH via a pull up resistor of 1 Kohm.
14.During Power-Up, when the DOFF is tied HIGH, the DLL gets locked after 1024 cycles of stable clock.
Power-up Waveforms
> 1024 Stable clock
Start Normal
Operation
DOFF
Stable (< +/- 0.1V DC per 50ns )
Fix High (or tied to V
DDQ
)
K
K
DDQ
DD
V
V
/
DDQ
DD
V
V
/
Clock Start
(Clock Starts after Stable)
DDQ
DD
V
V
/
~
~
Unstable Clock
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CY7C1425AV18-250BZXC

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 36M PARALLEL 165FBGA
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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