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MLX90251EVA-FAA-000-BU

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
MLX90251
Programmable Linear Hall Effect Sensor
3901090251 Page 7 of 20 Data Sheet
Rev 012 Oct/2012
7 Programming Range
T
A
programming 20°C to 30°C.
Parameter Symbol Test Conditions Min Typical
Max Units
Output Quiescent Voltage V
OQ
AGND = Default
AGND = 0…1023
-10
-100
110
200
%V
DD
%V
DD
Sensitivity S 2.6 210 mV/mT
Output Clamping Voltage Low ClampLo 0 100 %V
DD
Output Clamping Voltage High ClampHi 0 100 %V
DD
Temperature Compensation TempCo 1
st
order 0 2300 ppm / °C
Table 4: Programming Range Specifications
8 Timing Specifications
DC operating parameters at V
DD
= 5V (unless otherwise specified) and for T
A
as specified by the temperature
range (E or L).
Parameter Symbol Test Conditions Min Typical
Max Units
Power On Delay T
PO
FILTER = 0, RG = 0
FILTER = 0, RG = 15
FILTER = 15, RG = 0
FILTER = 15, RG = 15
0.4
0.6
1.1
5
0.8
1.2
2.2
10
ms
ms
ms
ms
Step Response Time RG = 0 to 3, FILTER = 0
RG = 4 to 7, FILTER = 0
RG = 8 to 11, FILTER = 0
RG = 12 to 15, FILTER = 0
24
48
100
200
32
64
132
264
µs
µs
µs
µs
Table 5: Timing Specifications
9 Accuracy
DC operating parameters at V
DD
= 5V (unless otherwise specified) and for T
A
as specified by the temperature
range (E or L).
Parameter Symbol
††
Test Conditions Min Typical
Max Units
Thermal Voq Drift
∆
T
V
OQ
V
OQ
= 2.5V
(1)
,
25
°C
/ 150
°C
V
OQ
= 2.5V
(1)
, 25°C / -40°C
-
0.2
- 0.4
+ 0.2
+ 0.4
%
V
DD
%V
DD
Life Time Drift of the Thermal
Voq Drift
∆
L
∆
T
V
OQ
-
0.2
+ 0.2
%
V
DD
Life Time Voq Drift
∆
L
∆
V
OQ
-
0.3
+ 0.3
%
V
DD
Life Time Sensitivity Drift
∆
L
∆
S
-
1
+ 1
%
Sensitivity Temperature
Coefficient
†
TCs
0 to 500
ppm /
°C
500 to 1200 ppm / °C
1200 to 2300 ppm / °C
±
100
± 150
± 200
ppm /
°C
ppm / °C
ppm / °C
Thermal Drift of Sen
sitivity
Temperature Compensation
∆
T
TC
VA
-
package
GO-package
150
250
ppm /
°C
Thermal Drift Output Clamping
Levels
∆
T
V
OUTCLAMP
-
0.4
+ 0.4
%
V
DD
Life Time Drift Output Clamping
Levels
∆
L
V
OUTCLAMP
-
0.2
+ 0.2
%
V
DD
Linearity error
Le
0.2
%
Table 6: Accuracy Specifications
MLX90251
Programmable Linear Hall Effect Sensor
3901090251 Page 8 of 20 Data Sheet
Rev 012 Oct/2012
†
Valid for Rough Gain within the specified option code.
††
∆
L
= Life Time Drift (based on HTOL data [1000 hours @ 150°C]).
∆
T
= Thermal Drift.
(1)
For other test conditions, please contact the Melexis Sales representative of your area.
10 Programmable Features
The MLX90251 has many programmable features for adjusting the output characteristic. The features are
utilized by writing data into the redundant non-volatile EEPROM. Below is a quick list and description of all
the programmable parameters. Many of the parameters are set by Melexis and they are not used by the end
customer. Later sections of the data sheet give details on how the parameters are used.
Parameter Symbol Description Number of Bits
Default
Internal Bias Point AGND Coarse adjustment of V
OQ
. 10 Trimmed
Analog Clock Choice
†
CKANACH Adjustment for amplifier clock generator. 2 Preset
Clamping High CLAMPHIGH
Adjustment of upper output clamping voltage. 10 512
Clamping Low CLAMPLOW Adjustment of lower output clamping voltage. 10 512
Customer ID
††
CUSTID Open bits for customer’s ID programming. 24 Preset
Offset Drift
†
DRIFT V
OQ
temperature drift compensation. 4 Trimmed
EEPROM Fault Level FAULTLEV Output state for EEPROM parity error. 1 0
Fine Gain FG Fine adjustment for Sensitivity. 10 0
Filter FILTER Adjustment for low pass output filter. 4 0
Invert Slope INVERT Sensitivity polarity selection. 1 0
Memory Lock MEM_LOCK Used to lock the entire EEPROM. 1 0
Melexis ID
†
MLX_ID Melexis IC identification number. Preset
Melexis Lock
†
MLX_LOCK Used to lock Melexis area of the EEPROM. 1 0
Output Driver
†
MODE Adjustment for output stage amplifier. 2 1
Offset DAC OFFSET Fine adjustment of V
OQ
. 10 0
Oscillator Adjust
†
OSCADJ Chip oscillator frequency adjustment. 4 Preset
EEPROM Parity PARITY Ensures the integrity of the EEPROM data. 3 Calculated
Rough Gain RG Rough adjustment for Sensitivity. 4 0
Slow
†
SLOW Amplifier speed adjustment. 1 Preset
Temperature
Compensation Window
TCW
Range adjustment for Sensitivity Temperature
Compensation.
3 0
Temperature
Compensation
TC
Fine adjustment of Sensitivity Temperature
Compensation.
5 0
2nd Order Temperature
Compensations
TC
2
Linearization adjustment of the Sensitivity
Temperature Compensation.
6 0
Table 7: Programmable Parameters
†
Melexis parameter adjusted at final test.
††
Not included in redundant area of the EEPROM.
MLX90251
Programmable Linear Hall Effect Sensor
3901090251 Page 9 of 20 Data Sheet
Rev 012 Oct/2012
10.1 Output Quiescent Voltage (V
OQ
)
Two parameters, AGND and OFFSET, are used for adjustment of the V
OQ
. The AGND is a 10 bit parameter
for coarse adjustment of V
OQ
. It has a resolution of approximately 0.014V and a range of -100%V
DD
to
200%V
DD
. The OFFSET is a 10 bit parameter with a resolution of approximately -0.005V. The OFFSET
parameter is used for fine adjustment of the V
OQ
, while the AGND parameter is used to set the range. The
large adjustable range allows the MLX90251 to be used in an unipolar magnetic system without limiting the
output voltage span. The formula below shows how the AGND and OFFSET parameters combine to set the
V
OQ
.
VV
OQ
DD
OFFSET
V
AGND
V
VV
00.5
1023
0.5
1023
25.14
75.0
=
∗−+
∗+−=
This formula approximates the typical V
OQ
of the MLX90251. The actual V
OQ
formula varies slightly from chip
to chip. Melexis calibrates the AGND setting during final test so that the V
OQ
is approximately 50%V
DD
with
OFFSET set to 512. This gives the V
OQ
a range of 0%V
DD
to 100%V
DD
without adjusting the AGND value.
The OFFSET parameter is often used to set the offset in the application's output transfer characteristic.
10.2 Thermal V
OQ
Drift (DRIFT)
The Thermal V
OQ
Drift is tuned using 4 bits. This parameter, DRIFT, is calibrated for each unit by Melexis
during final test. The value is set to achieve a V
OQ
accuracy below 10mV over a temperature span of 25°C to
150°C. This parameter is not used by the end customer.
10.3 Sensitivity, Rough Gain and Fine Gain
The Sensitivity of the MLX90251 is controlled through parameters linked to dedicated internal amplification
stages. The parameter Rough Gain (RG), or pre-amplifier, has 4 bits for adjustment of two stages. The two
MSB affect the Differential Input Differential Output (DIDO) stage. The two LSB effect the Differential to
Single output (DTS) stage. The gain of both the DIDO and DTS are multiplied to get the total RG. The table
below shows the theoretical small signal amplifier gain vs. the parameter RG. The pre-amplifier is chopper
stabilized and the refresh frequency is adapted automatically to the RG setting to match the chopper gain-
bandwidth product.
Rough Gain (MSB LSB) DIDO DTS Gain
00 (00 00) 16 1.0 16
01 (00 01) 16 1.5 24
02 (00 10) 16 2.33 37
03 (00 11) 16 4.0 64
04 (01 00) 39 1.0 39
05 (01 01) 39 1.5 59
06 (01 10) 39 2.33 91
07 (01 11) 39 4.0 156
08 (10 00) 82 1.0 82
09 (10 01) 82 1.5 123
10 (10 10) 82 2.33 191
11 (10 11) 82 4.0 328
12 (11 00) 205 1.0 205
13 (11 01) 205 1.5 308
14 (11 10) 205 2.33 477
15 (11 11) 205 4.0 820
Table 8: MLX90251 Rough Gain Small Signal Amplifier Gain
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MLX90251EVA-FAA-000-BU

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Buy MLX90251EVA-FAA-000-BU
Manufacturer:
Melexis
Description:
Board Mount Hall Effect / Magnetic Sensors Programmable Linear Hall ICs (Gen. II)
Lifecycle:
New from this manufacturer.
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