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NCV887103D1R2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
© Semiconductor Components Industries, LLC, 2017
January, 2017 − Rev. 13
1 Publication Order Number:
NCV8871/D
NCV8871
Automotive Grade
Non-Synchronous Boost
Controller
The NCV8871 is an adjustable output non−synchronous boost
controller which drives an external N−channel MOSFET. The device
uses peak current mode control with internal slope compensation. The
IC incorporates an internal regulator that supplies charge to the gate
driver.
Protection features include internally−set soft−start, undervoltage
lockout, cycle−by−cycle current limiting, hiccup−mode short−circuit
protection and thermal shutdown.
Additional features include low quiescent current sleep mode and
externally−synchronizable switching frequency.
Features
• Peak Current Mode Control with Internal Slope Compensation
• 1.2 V ±2% Reference voltage
• Fixed Frequency Operation
• Wide Input Voltage Range of 3.2 V to 40 Vdc, 45 V Load Dump
• Input Undervoltage Lockout (UVLO)
• Internal Soft−Start
• Low Quiescent Current in Sleep Mode
• Cycle−by−Cycle Current Limit Protection
• Hiccup−Mode Overcurrent Protection (OCP)
• Hiccup−Mode Short−Circuit Protection (SCP)
• Thermal Shutdown (TSD)
• This is a Pb−Free Device
MARKING
DIAGRAM
8871xx = Specific Device Code
xx = 00, 01, 02, 03, 04
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
www.onsemi.com
SOIC−8
D SUFFIX
CASE 751
1
8
PIN CONNECTIONS
1 8
2
3
4
7
6
5
(Top View)
8871xx
ALYW
G
1
8
EN/SYNC
ISNS
GND
GDRV
VFB
VC
VIN
VDRV
Device Package Shipping
†
ORDERING INFORMATION
NCV887100D1R2G SOIC−8
(Pb−Free)
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCV887101D1R2G SOIC−8
(Pb−Free)
2500 / Tape &
Reel
NCV887102D1R2G SOIC−8
(Pb−Free)
2500 / Tape &
Reel
NCV887103D1R2G SOIC−8
(Pb−Free)
2500 / Tape &
Reel
NCV887104D1R2G SOIC−8
(Pb−Free)
2500 / Tape &
Reel
NCV8871
www.onsemi.com
2
Gm
8
3
2
4
6
GND
ISNS
GDRV
VIN
VFB
5
VDRV
CSA
OSC
Q
D
L
SC
TEMP
VDRV
DRIVE
LOGIC
CL
SCP
SS
FAULT
LOGIC
CLK
1
EN/SYNC
EN/
SYNC
7
VC
PWM
+
R
C
C
C
R
SNS
R
F1
V
ref
C
DRV
R
F2
V
g
V
o
C
g
C
o
Figure 1. Simplified Block Diagram and Application Schematic
PACKAGE PIN DESCRIPTIONS
Pin No.
Pin
Symbol
Function
1 EN/SYNC Enable and synchronization input. The falling edge synchronizes the internal oscillator. The part is disabled
into sleep mode when this pin is brought low for longer than the enable time−out period.
2 ISNS Current sense input. Connect this pin to the source of the external N−MOSFET, through a current−sense
resistor to ground to sense the switching current for regulation and current limiting.
3 GND Ground reference.
4 GDRV Gate driver output. Connect to gate of the external N−MOSFET. A series resistance can be added from
GDRV to the gate to tailor EMC performance. An R
GND
= 15 kW (typical) GDRV−GND resistor is strongly
recommended.
5 VDRV Driving voltage. Internally−regulated supply for driving the external N−MOSFET, sourced from VIN. Bypass
with a 1.0 mF ceramic capacitor to ground.
6 VIN Input voltage. If bootstrapping operation is desired, connect a diode from the input supply to VIN, in addi-
tion to a diode from the output voltage to VDRV and/or VIN.
7 VC Output of the voltage error amplifier. An external compensator network from VC to GND is used to stabilize
the converter.
8 VFB Output voltage feedback. A resistor from the output voltage to VFB with another resistor from VFB to GND
creates a voltage divider for regulation and programming of the output voltage.
NCV8871
www.onsemi.com
3
ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND, unless otherwise indicated)
Rating
Value Unit
Dc Supply Voltage (VIN) −0.3 to 40 V
Peak Transient Voltage (Load Dump on VIN) 45 V
Dc Supply Voltage (VDRV, GDRV) 12 V
Peak Transient Voltage (VFB) −0.3 to 6 V
Dc Voltage (VC, VFB, ISNS) −0.3 to 3.6 V
Dc Voltage (EN/SYNC) −0.3 to 6 V
Dc Voltage Stress (VIN − VDRV)* −0.7 to 45 V
Operating Junction Temperature −40 to 150 °C
Storage Temperature Range −65 to 150 °C
Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C 265 peak °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*An external diode from the input to the VIN pin is required if bootstrapping VDRV and VIN off of the output voltage.
PACKAGE CAPABILITIES
Characteristic Value Unit
ESD Capability (All Pins) Human Body Model
Machine Model
w2.0
w200
kV
V
Moisture Sensitivity Level 1 −
Package Thermal Resistance Junction−to−Ambient, R
q
JA
(Note 1)
100 °C/W
1. 1 in
2
, 1 oz copper area used for heatsinking.
Device Variations
The NCV8871 features several variants to better fit a
multitude of applications. The table below shows the typical
values of parameters for the parts that are currently
available.
TYPICAL VALUES
Part No. D
max
f
s
t
ss
S
a
V
cl
I
src
I
sink
V
DRV
SCE
NCV887100 88% 170 kHz 7.4 ms
53 mV/ms
400 mV 800 mA 600 mA 10.5 V Y
NCV887101 86% 1000 kHz 1.25 ms
16 mV/ms
400 mV 575 mA 350 mA 6.3 V Y
NCV887102 91% 1000 kHz 1.25 ms
53 mV/ms
400 mV 800 mA 600 mA 6.3 V N
NCV887103 93% 340 kHz 3.7 ms
53 mV/ms
200 mV 575 mA 350 mA 8.4 V Y
NCV887104 93% 340 kHz 3.7 ms
53 mV/ms
200 mV 800 mA 600 mA 8.4 V N
DEFINITIONS
Symbol Characteristic Symbol Characteristic Symbol Characteristic
D
max
Maximum Duty Cycle f
s
Switching Frequency t
ss
Soft−Start Time
S
a
Slope Compensating Ramp V
cl
Current Limit Trip Voltage I
src
Gate Drive Sourcing Current
I
sink
Gate Drive Sinking Current V
DRV
Drive Voltage SCE Short Circuit Enable
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

NCV887103D1R2G

Mfr. #:
Buy NCV887103D1R2G
Manufacturer:
ON Semiconductor
Description:
Switching Controllers AUTOMOTIVE-GRADE NON-SYNC
Lifecycle:
New from this manufacturer.
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