NCV8871
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS (−40°C < T
J
< 150°C, 3.2 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol Conditions Min Typ Max Unit
GENERAL
Quiescent Current, Sleep Mode
I
q,sleep
V
IN
= 13.2 V, EN = 0, T
J
= 25°C 2.0
mA
Quiescent Current, Sleep Mode I
q,sleep
V
IN
= 13.2 V, EN = 0, −40°C < T
J
< 125°C 2.0 6.0
mA
Quiescent Current, No switching I
q,off
Into VIN pin, EN = 1, No switching 1.5 2.5 mA
Quiescent Current, Switching,
normal operation
I
q,on
Into VIN pin, EN = 1, Switching 3.0 6.0 mA
OSCILLATOR
Minimum pulse width
t
on,min
90 115 140 ns
Maximum duty cycle D
max
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
86
84
89
91
91
88
86
91
93
93
90
88
93
95
95
%
Switching frequency f
s
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
153
900
900
306
306
170
1000
1000
340
340
187
1100
1100
374
374
kHz
Soft−start time t
ss
From start of switching with V
FB
= 0 until
reference voltage = V
REF
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
6.0
1.0
1.0
3.0
3.0
7.4
1.25
1.25
3.7
3.7
8.8
1.5
1.5
4.4
4.4
ms
Soft−start delay t
ss,dly
From EN 1 until start of switching with
V
FB
= 0 240 280
ms
Slope compensating ramp S
a
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
46
13
46
46
46
53
16
53
53
53
60
19
60
60
60
mV/ms
ENABLE/SYNCHRONIZATION
EN/SYNC pull−down current
I
EN/SYNC
V
EN/SYNC
= 5 V 5.0 10
mA
EN/SYNC input high voltage V
s,ih
V
IN
> V
UVLO
2.0 5.0 V
EN/SYNC input low voltage V
s,il
0 800 mV
EN/SYNC time−out ratio %t
en
From SYNC falling edge, to oscillator con-
trol (EN high) or shutdown (EN low), Per-
cent of typical switching period
350 %
SYNC minimum frequency ratio %f
sync,min
Percent of f
s
80 %
SYNC maximum frequency f
sync,max
1.1 MHz
Synchronization delay t
s,dly
From SYNC falling edge to GDRV falling
edge under open loop conditions
50 100 ns
Synchronization duty cycle D
sync
25 75 %
CURRENT SENSE AMPLIFIER
Low−frequency gain
A
csa
Input−to−output gain at dc, ISNS v 1 V 0.9 1.0 1.1 V/V
Bandwidth BW
csa
Gain of A
csa
− 3 dB 2.5 MHz
ISNS input bias current I
sns,bias
Out of ISNS pin 30 50
mA
NCV8871
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS (−40°C < T
J
< 150°C, 3.2 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic UnitMaxTypMinConditionsSymbol
CURRENT SENSE AMPLIFIER
Current limit threshold voltage
V
cl
Voltage on ISNS pin
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
360
360
360
180
180
400
400
400
200
200
440
440
440
220
220
mV
Current limit,
Response time
t
cl
CL tripped until GDRV falling edge,
V
ISNS
= V
cl
(typ) + 60 mV
80 125 ns
Overcurrent protection,
Threshold voltage
%V
ocp
Percent of V
cl
125 150 175 %
Overcurrent protection,
Response Time
t
ocp
From overcurrent event, Until switching
stops, V
ISNS
= V
OCP
+ 40 mV
125 ns
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
g
m,vea
V
FB
– V
ref
= ± 20 mV 0.8 1.2 1.63 mS
VEA output resistance R
o,vea
2.0
MW
VFB input bias current I
vfb,bias
Current out of VFB pin 0.5 2.0
mA
Reference voltage V
ref
1.176 1.200 1.224 V
VEA maximum output voltage V
c,max
2.5 V
VEA minimum output voltage V
c,min
0.3 V
VEA sourcing current I
src,vea
VEA output current, Vc = 2.0 V 80 100
mA
VEA sinking current I
snk,vea
VEA output current, Vc = 0.7 V 80 100
mA
GATE DRIVER
Sourcing current
I
src
V
DRV
6 V, V
DRV
− V
GDRV
= 2 V
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
600
400
600
400
600
800
575
800
575
800
mA
Sinking current I
sink
V
GDRV
2 V
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
500
250
500
250
500
600
350
600
350
600
mA
Driving voltage dropout V
drv,do
V
IN
− V
DRV
, Iv
DRV
= 25 mA 0.3 0.6 V
Driving voltage source current I
drv
V
IN
− V
DRV
= 1 V 35 45 mA
Backdrive diode voltage drop V
d,bd
V
DRV
− V
IN
, I
d,bd
= 5 mA 0.7 V
Driving voltage V
DRV
I
VDRV
= 0.1 − 25 mA
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
10
6.0
6.0
8.0
8.0
10.5
6.3
6.3
8.4
8.4
11
6.6
6.6
8.8
8.8
V
UVLO
Undervoltage lock−out,
Threshold voltage
V
uvlo
V
IN
falling 3.0 3.1 3.2 V
Undervoltage lock−out,
Hysteresis
V
uvlo,hys
V
IN
rising 50 125 200 mV
NCV8871
www.onsemi.com
6
ELECTRICAL CHARACTERISTICS (−40°C < T
J
< 150°C, 3.2 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic UnitMaxTypMinConditionsSymbol
SHORT CIRCUIT PROTECTION
Startup blanking period
%t
scp,dly
From start of soft−start, Percent of t
ss
100 120 150 %
Hiccup−mode period %t
hcp,dly
From shutdown to start of soft−start,
Percent of t
ss
70 85 100 %
Short circuit threshold voltage %V
scp
V
FB
as percent of V
ref
60 67 75 %
Short circuit delay t
scp
From V
FB
< V
scp
to stop switching 35 100 ns
THERMAL SHUTDOWN
Thermal shutdown threshold
T
sd
T
J
rising 160 170 180 °C
Thermal shutdown hysteresis T
sd,hys
T
J
falling 10 15 20 °C
Thermal shutdown delay t
sd,dly
From T
J
> T
sd
to stop switching 100 ns

NCV887103D1R2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers AUTOMOTIVE-GRADE NON-SYNC
Lifecycle:
New from this manufacturer.
Delivery:
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