12
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
03/21/2008
IS61C25616AL IS61C25616AS
IS64C25616AL IS64C25616AS
DATA RETENTION SWITCHING CHARACTERISTICS (HIGH SPEED) (IS61/64C25616AL)
Symbol Parameter Test Condition Min. Max. Unit
VDR VDD for Data Retention See Data Retention Waveform 2.9 5.5 V
IDR Data Retention Current VDD = 2.9V, CE ≥ V DD – 0.2V Com. — 8 mA
VIN ≥ VDD – 0.2V, or VIN
≤
VSS + 0.2V
Ind. — 10
Auto. — 15
typ.
(1)
1
tSDR Data Retention Setup Time See Data Retention Waveform 0 — ns
tRDR Recovery Time See Data Retention Waveform tRC —ns
Note:
1. Typical Values are measured at V
DD
= 5V, T
A
= 25
o
C and not 100% tested.
DATA RETENTION WAVEFORM (
CECE
CECE
CE Controlled)
VDD
CE ≥ VDD
- 0.2V
t
SDR
t
RDR
V
DR
CE
GND
4.5V
Data Retention Mode