IS64C25616AL-12CTLA3-TR

4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
03/21/2008
IS61C25616AL IS61C25616AS
IS64C25616AL IS64C25616AS
OPERATING RANGE: LOW POWER OPTION (IS61/64C25616AS)
Range Ambient Temperature VDD Speed (ns)
Commercial 0°C to +70°C 5V ± 10% 25
Industrial -40°C to +85°C 5V ± 10% 25
Automotive -40°C to +125°C 5V ± 10% 25
OPERATING RANGE: HIGH SPEED OPTION (IS61/64C25616AL)
Range Ambient Temperature VDD Speed (ns)
Commercial 0°C to +70°C 5V ± 10% 10
Industrial -40°C to +85°C 5V ± 10% 10
Automotive -40°C to +125°C 5V ± 10% 12
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
5
Rev. C
03/21/2008
IS61C25616AL IS61C25616AS
IS64C25616AL IS64C25616AS
HIGH SPEED OPTION (IS61/64C25616AL)
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10 ns -12 ns
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
I
CC1 VDD Operating VDD = VDD MAX., CE = VIL
Com.
—45 45 mA
Supply Current IOUT = 0 mA, f = 0
Ind.
—50 50
Auto.
—55 55
I
CC2 VDD Dynamic Operating VDD = VDD MAX., CE = VIL
Com.
—50 45 mA
Supply Current IOUT = 0 mA, f = fMAX
Ind.
—55 50
Auto.
—70 60
typ.
(2)
30 25
I
SB1 TTL Standby Current VDD = VDD MAX.,
Com.
—15 15 mA
(TTL Inputs) VIN = VIH or VIL
Ind.
—20 20
CE VIH, f = 0
Auto.
—30 30
ISB2 CMOS Standby VDD = VDD MAX.,
Com.
—8 8 mA
Current (CMOS Inputs) CE
VDD – 0.2V,
Ind.
—12 12
VIN VDD – 0.2V, or
Auto.
—20 20
VIN
0.2V, f = 0
typ.
(2)
2
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 5V, TA = 25
o
C and not 100% tested.
LOW POWER OPTION (IS61/64C25616AS)
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-25 ns
Symbol Parameter Test Conditions Min. Max. Unit
ICC Average operating CE = VIL, Com. 10 mA
Current VDD = Max., Ind. 15
I OUT= 0 mA, f = 0 Auto. 20
ICC1VDD Dynamic Operating VDD = Max., CE = VIL Com. 25 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. 30
VIN = VIH or VIL Auto. 40
typ.
(2)
15
ISB1 TTL Standby Current VDD = Max., Com. 1 mA
(TTL Inputs) VIN = VIH or VIL, CE V IH, Ind. 1.5
f = 0 Auto. 2
ISB2 CMOS Standby VDD = Max., Com. 0.8 mA
Current (CMOS Inputs) CE V DD – 0.2V, Ind. 0.9
VIN V DD – 0.2V, Auto. 2
or VIN V SS + 0.2V, f = 0
typ.
(2)
0.2
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 5V, TA = 25
o
C and not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
03/21/2008
IS61C25616AL IS61C25616AS
IS64C25616AL IS64C25616AS
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10 -12 -25
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
tRC Read Cycle Time 10 12 25 ns
tAA Address Access Time 10 12 25 ns
tOHA Output Hold Time 3 3 3 ns
tACE CE Access Time 10 12 25 ns
tDOE OE Access Time 5 6 15 ns
tHZOE
(2)
OE to High-Z Output 0 5 0 6 0 8 ns
tLZOE
(2)
OE to Low-Z Output 0 0 2 ns
tHZCE
(2)
CE to High-Z Output 0 5 0 6 0 8 ns
tLZCE
(2)
CE to Low-Z Output 2 2 2 ns
tBA LB, UB Access Time 5 6 25 ns
tHZB LB, UB to High-Z Output 0 5 0 6 0 8 ns
tLZB LB, UB to Low-Z Output 0 0 0 ns
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 3 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1 and 2
480 Ω
30 pF
Including
jig and
scope
255 Ω
OUTPUT
5V
480 Ω
5 pF
Including
jig and
scope
255 Ω
OUTPUT
5V
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0
to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
Figure 1
Figure 2
AC TEST LOADS

IS64C25616AL-12CTLA3-TR

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 4M (256Kx16) 12ns Async SRAM 5v
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New from this manufacturer.
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