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HMC903LP3ETR

P1-P3P4-P6P7-P9P10-P12P13-P13
Data Sheet HMC903LP3E
Rev. H | Page 7 of 13
25
20
15
10
0
5
6 18
16
14
12108
P1dB (dBm)
FREQUENCY (GHz)
–40°C
+25°C
+85°C
14479-014
Figure 14. Output Power for 1 dB Compression (P1dB) vs. Frequency for
Various Temperatures (Board Loss Removed from Gain, Power, and
Noise Figure Measurements)
0
–10
–20
–30
–40
–60
–50
6 1816
1412108
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
–40°C
+25°C
+85°C
14479-015
Figure 15. Reverse Isolation vs. Frequency for Various Temperatures
22
8
10
12
14
16
18
20
7
0
1
2
3
4
5
6
3.0 4.03.5
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
V
DD
(V)
NOISE FIGURE
P1dB
GAIN
14479-016
Figure 16. Gain, Output Power for 1 dB Compression (P1dB), and Noise
Figure vs. Supply Voltage (V
DD
) at 12 GHz (Board Loss Removed from Gain,
Power, and Noise Figure Measurements)
25
20
15
10
0
5
6 18
161412108
P
SAT
(dBm)
FREQUENCY (GHz)
–40°C
+25°C
+85°C
14479-017
Figure 17. Saturated Output Power (P
SAT
) vs. Frequency for
Various Temperatures (Board Loss Removed from Gain, Power, and
Noise Figure Measurements)
24
20
16
12
8
4
0
–4
–20 –17
–14 –11
–8
–5
–2
1 4
P
OUT
(dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
PAE
P
OUT
GAIN
14479-018
Figure 18. Output Power (P
OUT
), Gain, and Power Added Efficiency (PAE) vs.
Input Power (Board Loss Removed from Gain, Power, and
Noise Figure Measurements)
HMC903LP3E Data Sheet
Rev. H | Page 8 of 13
94
92
90
88
86
84
82
80
78
–30
–27 –24
–21 –18 –15 –12 –9 –6 –3 0 3
I
DD
(mA)
INPUT POWER (dBm)
14479-019
Figure 19. Supply Current (I
DD
) vs. Input Power (Board Loss Removed from
Gain Measurement and Data Taken at V
DD1
= V
DD2
= 3 V)
30
25
20
15
10
5
0
120
100
80
60
40
20
0
–0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 0
GAIN (dB), IP3 (dBm)
I
DD
(mA)
V
GG1
, V
GG2
GATE VOLTAGE (V dc)
I
DD
GAIN
IP3
14479-020
Figure 20. Gain, Output Third-Order Intercept (IP3), and Supply Current (I
DD
) vs.
V
GG1
, V
GG2
Gate Voltage
Data Sheet HMC903LP3E
Rev. H | Page 9 of 13
THEORY OF OPERATION
The HMC903LP3E is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic (pHEMT),
low noise amplifier. The HMC903LP3E amplifier uses two gain
stages in series, and the basic schematic of the amplifier is shown in
Figure 21, which forms a low noise amplifier operating from 6 GHz
to 17 GHz with excellent noise figure performance.
V
DD1
V
GG1
V
DD2
V
GG2
RFIN RFOUT
14479-021
Figure 21. Basic Schematic of the Amplifier
The HMC903LP3E has single-ended input and output ports
whose impedances are nominally equal to 50 Ω over the 6 GHz
to 17 GHz frequency range. Consequently, it can directly insert
into a 50 Ω system with no required impedance matching
circuitry, which also means that multiple HMC903LP3E
amplifiers can be cascaded back to back without the need for
external matching circuitry.
The input and output impedances are sufficiently stable vs.
variations in temperature and supply voltage that no impedance
matching compensation is required.
Note that it is critical to supply very low inductance ground
connections to the GND pins and to the package base exposed
pad to ensure stable operation. To achieve optimal performance
from the HMC903LP3E and to prevent damage to the device, do
not exceed the absolute maximum ratings.
P1-P3P4-P6P7-P9P10-P12P13-P13

HMC903LP3ETR

Mfr. #:
Buy HMC903LP3ETR
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier LNA, HIP3, 6-18GHz
Lifecycle:
New from this manufacturer.
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