NDS8852H Datasheet NDS8852H | P1-P3

February 1996

NDS8852H

Complementary MOSFET Half Bridge

General Description Features

________________________________________________________________________________

Absolute Maximum Ratings T

A

= 25°C unless otherwise noted

Symbol Parameter N-Channel P-Channel Units

V

DSS

Drain-Source Voltage 30 -30 V

V

GSS

Gate-Source Voltage 20 -20 V

I

D

Drain Current - Continuous (Note 1a & 2) 4.3 -3.4 A

- Pulsed 15 -10

P

D

Maximum Power Dissipation (Note 1a) 2.5 W

(Single Device) (Note 1b) 1.2

(Note 1c) 1

T

J

,T

STG

Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

R

θ

JA

Thermal Resistance, Junction-to-Ambient

(Single Device) (Note 1a)

50 °C/W

R

θ

JC

Thermal Resistance, Junction-to-Case

(Single Device) (Note 1)

25 °C/W

NDS8852H Rev. C1

These Complementary MOSFET half bridge devices are

produced using Fairchild's proprietary, high cell density,

DMOS technology. This very high density process is

especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulses in the avalanche and commutation modes. These

devices are particularly suited for low voltage half bridge

applications or CMOS applications when both gates are

connected together.

N-Channel 4.3A, 30V, R

DS(ON)

=0.08Ω @ V

GS

=10V.

P-Channel -3.4A, -30V, R

DS(ON)

=0.13Ω @ V

GS

=-10V.

High density cell design or extremely low R

DS(ON)

.

High power and current handling capability in a widely used

surface mount package.

Matched pair for equal input capacitance and power capability

.

P-Gate

Vout

V-

V+

N-Gate

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Symbol Parameter Conditions Type Min Typ Max Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage V

GS

= 0 V, I

D

= 250 µA N-Ch 30 V

V

GS

= 0 V, I

D

= -250 µA

P-Ch -30 V

I

DSS

Zero Gate Voltage Drain Current V

DS

= 24 V, V

GS

= 0 V N-Ch 2 µA

T

J

= 55

o

C

25 µA

V

DS

= -24 V, V

GS

= 0 V P-Ch -2 µA

T

J

= 55

o

C

-25 µA

I

GSSF

Gate - Body Leakage, Forward V

GS

= 20 V, V

DS

= 0 V All 100 nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS

= -20 V, V

DS

= 0 V

All -100 nA

ON CHARACTERISTICS (Note 3)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250 µA

N-Ch 1 1.7 2.8 V

T

J

= 125

o

C

0.7 1.2 2.2

V

DS

= V

GS

, I

D

= -250 µA

P-Ch -1 -1.6 -2.8

T

J

= 125

o

C

-0.85 -1.25 -2.5

R

DS(ON)

Static Drain-Source On-Resistance

V

GS

= 10 V, I

D

= 3.4 A

N-Ch 0.06 0.08

Ω

T

J

= 125

o

C 0.08 0.13

V

GS

= 4.5 V, I

D

= 2.8 A

0.08 0.11

V

GS

= -10 V, I

D

= -3.4 A P-Ch 0.11 0.13

T

J

= 125

o

C

0.15 0.21

V

GS

= -4.5 V, I

D

= -2.8 A 0.17 0.2

I

D(on)

On-State Drain Current

V

GS

= 10 V, V

DS

= 5 V

N-Ch 10 A

V

GS

= -10 V, V

DS

= -5 V P-Ch -10

g

FS

Forward Transconductance

V

DS

= 15 V, I

D

= 3.4 A

N-Ch 6 S

V

DS

= -15 V, I

D

= -3.4 A P-Ch 4

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance N-Channel

V

DS

= 15 V, V

GS

= 0 V,

f = 1.0 MHz

P-Channel

V

DS

= -15 V, V

GS

= 0 V,

f = 1.0 MHz

N-Ch 300 pF

P-Ch 330

C

oss

Output Capacitance N-Ch 190 pF

P-Ch 190

C

rss

Reverse Transfer Capacitance N-Ch 70 pF

P-Ch 70

NDS8852H Rev. C1

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Symbol Parameter Conditions Type Min Typ Max Units

SWITCHING CHARACTERISTICS (Note 3)

t

D(on)

Turn - On Delay Time N-Channel

V

DD

= 10 V, I

D

= 1 A,

V

GEN

= 10 V, R

GEN

= 6 Ω

P-Channel

V

DD

= -10 V, I

D

= -1 A,

V

GEN

= -10 V, R

GEN

= 6 Ω

N-Ch 10 15 ns

P-Ch 9 40

t

r

Turn - On Rise Time N-Ch 13 20 ns

P-Ch 21 40

t

D(off)

Turn - Off Delay Time N-Ch 21 50 ns

P-Ch 21 90

t

f

Turn - Off Fall Time N-Ch 5 50 ns

P-Ch 8 50

Q

g

Total Gate Charge N-Channel

V

DS

= 10 V,

I

D

= 3.4 A, V

GS

= 10 V

P-Channel

V

DS

= -10 V,

I

D

= -3.4 A, V

GS

= -10 V

N-Ch 9.5 27 nC

P-Ch 10 25

Q

gs

Gate-Source Charge N-Ch 1.5

P-Ch 1.6

Q

gd

Gate-Drain Charge N-Ch 2.6

P-Ch 2.7

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current N-Ch 2.1 A

P-Ch -2.1

V

SD

Drain-Source Diode Forward

Voltage

V

GS

= 0 V, I

S

= 2.1 A

(Note 2) N-Ch 0.8 1.2 V

V

GS

= 0 V, I

S

= -2.1 A

(Note 2)

P-Ch -0.8 -1.2

t

rr

Reverse Recovery Time N-Channel

V

GS

= 0 V, I

F

= 2.1 A, dI

F

/dt = 100 A/µs

N-Ch 100 ns

P-Channel

V

GS

= 0 V, I

F

= -2.1 A, dI

F

/dt = 100 A/µs

P-Ch 100

Notes:

1. R

θ

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

θ

JC

is guaranteed by

design while R

θ

CA

is determined by the user's board design.

P

D

(

t

)

=

T

J

−T

A

R

θJ A

(t)

=

T

J

−T

A

R

θ

J C

+R

θ

CA

(

t

)

= I

D

2

(t) × R

DS (ON ) T

J

Typical R

θ

JA

using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 50

o

C/W when mounted on a 1 in

2

pad of 2oz cpper.

b. 105

o

C/W when mounted on a 0.04 in

2

pad of 2oz cpper.

c. 125

o

C/W when mounted on a 0.006 in

2

pad of 2oz cpper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDS8852H Rev. C1

1a

1b

1c

NDS8852H

NDS8852H

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