NDS8852H Rev. C1
0 1 2 3
0
5
10
15
20
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
6.0
5.0
4.5
4.0
3.5
V =10V
GS
DS
D
8.0
3.0
0 3 6 9 12 15
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.5V
GS
D
R , NORMALIZED
DS(on)
8.0
6.0
10
4.5
5.0
4.0
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = -10V
GS
I = -3.4A
D
R , NORMALIZED
DS(ON)
-5-4-3-2-10
-20
-15
-10
-5
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -10V
GS
DS
D
-4.0
-6.0
-5.0
-4.5
-7.0
-3.5
-8.0
-3.0
-5.5
-15-12-9-6-30
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = -3.5V
GS
-10
-6.0
-4.0
-8.0
-7.0
-5.0
-4.5
-5.5
Typical Electrical Characteristics
Figure 1. N-Channel On-Region Characteristics.
Figure 2. P-Channel On-Region Characteristics.
Figure 3. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 4. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
Figure 5. N-Channel On-Resistance Variation
with Temperature.
Figure 6. P-Channel On-Resistance Variation
with Temperature.
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
GS
I = 3.4A
D
R , NORMALIZED
DS(ON)
NDS8852H Rev. C1
0 3 6 9 12 15
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C
D
V = 10 V
GS
-55°C
R , NORMALIZED
DS(on)
-15-12-9-6-30
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C
-55°C
D
V = -10V
GS
R , NORMALIZED
DS(on)
-6-5-4-3-2-1
-10
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = -10V
DS
GS
D
T = -55°C
J
25°C
125°C
1 2 3 4 5
0
2
4
6
8
10
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25°C
125°C
V = 10V
DS
GS
D
T = -55°C
J
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
Figure 8. P-Channel On-Resistance Variation
with Drain Current and Temperature.
Figure 9. N-Channel Transfer
Characteristics.
Figure 10. P-Channel Transfer
Characteristics.
Typical Electrical Characteristics
-50 -25 0 25 50 75 100 125 150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 250µA
D
V = V
DS GS
V , NORMALIZED
th
Figure 11. N-Channel Gate Threshold Variation
with Temperature.
-50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
I = -250µA
D
V = V
DS
GS
J
V , NORMALIZED
th
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
NDS8852H Rev. C1
-50 -25 0 25 50 75 100 125 150
0.92
0.96
1
1.04
1.08
1.12
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250µA
D
BV , NORMALIZED
DSS
J
0.1 0.2 0.5 1 2 5 10 30
50
100
200
300
500
800
1000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
0 2 4 6 8 10 12
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
I = -3.4A
D
V = -10V
DS
-20V
-15V
-50 -25 0 25 50 75 100 125 150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = -250µA
D
BV , NORMALIZED
DSS
J
0.1 0.2 0.5 1 2 5 10 30
50
100
200
300
500
800
1000
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
Typical Electrical Characteristics
Figure 13. N-Channel Breakdown Voltage
Variation with Temperature.
Figure 15. N-Channel Capacitance
Characteristics.
Figure 17. N-Channel Gate Charge Characteristics.
0 2 4 6 8 10 12
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 3.4A
D
20V
15V
V = 10V
DS
Figure 14. P-Channel Breakdown Voltage
Variation with Temperature.
Figure 18. P-Channel Gate Charge Characteristics.
Figure 16. P-Channel Capacitance
Characteristics.

NDS8852H

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET DISC BY MFG 2/02
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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