NDS8852H

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

N

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

4.3 A

Rds On - Drain-Source Resistance:

80 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Dual

Channel Mode:

Enhancement

Height:

1.75 mm

Length:

4.9 mm

Transistor Type:

1 N-Channel, 1 P-Channel

Width:

3.9 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

5 ns, 8 ns

Product Type:

MOSFET

Rise Time:

13 ns, 21 ns

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

21 ns, 21 ns

Typical Turn-On Delay Time:

10 ns, 9 ns

Unit Weight:

0.006596 oz

Tags

NDS885, NDS88, NDS8, NDS