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L6205D

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
13/21
L6205
PARALLELED OPERATION
The outputs of the L6205 can be paralleled to increase the output current capability or reduce the power dissi-
pation in the device at a given current level. It must be noted, however, that the internal wire bond connections
from the die to the power or sense pins of the package must carry current in both of the associated half bridges.
When the two halves of one full bridge (for example OUT1
A
and OUT2
A
) are connected in parallel, the peak
current rating is not increased since the total current must still flow through one bond wire on the power supply
or sense pin. In addition, the over current detection senses the sum of the current in the upper devices of each
bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the over current detec-
tion threshold.
For most applications the recommended configuration is Half Bridge 1 of Bridge A paralleled with the Half Bridge
1 of the Bridge B, and the same for the Half Bridges 2 as shown in Figure 12. The current in the two devices
connected in parallel will share very well since the R
DS(ON)
of the devices on the same die is well matched.
In this configuration the resulting Bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- R
DS(ON)
0.15
Ω
Typ. Value @ T
J
= 25°C
- 5.6A max RMS Load Current
- 11.2A OCD Threshold
Figure 12. Parallel connection for higher current
To operate the device in parallel and maintain a lower over current threshold, Half Bridge 1 and the Half Bridge
2 of the Bridge A can be connected in parallel and the same done for the Bridge B as shown in Figure 13. In
this configuration, the peak current for each half bridge is still limited by the bond wires for the supply and sense
pins so the dissipation in the device will be reduced, but the peak current rating is not increased. This configu-
ration, the resulting bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- R
DS(ON)
0.15
Ω
Typ. Value @ T
J
= 25°C
- 2.8A max RMS Load Current
- 5.6A OCD Threshold
OUT1
A
4
7
16
15
18
13
OUT1
B
GND
GND
GND
GNDOUT2
B
OUT2
A
VS
A
POWER
GROUND
SIGNAL
GROUND
+
-
VS
8-52V
DC
VS
B
VCP
VBOOT
C
1
SENSE
A
17
6
5
EN
B
11
14
3
12
19
SENSE
B
LOAD
8
EN
A
C
EN
R
EN
EN20
D02IN1359
1
IN2
IN1
A
IN2
B
10
IN1
B
9
IN2
A
IN1
2
C
P
C
BOOT
R
P
D
2
D
1
C
2
L6205
14/21
Figure 13. Parallel connection with lower Overcurrent Threshold
It is also possible to parallel the four Half Bridges to obtain a simple Half Bridge as shown in Fig. 14 The resulting
half bridge has the following characteristics.
- Equivalent Device: HALF BRIDGE
- R
DS(ON)
0.075
Ω
Typ. Value @ T
J
= 25°C
- 5.6A max RMS Load Current
- 11.2A OCD Threshold
Figure 14. Paralleling the four Half Bridges
C
P
C
BOOT
R
P
D
2
D
1
C
2
OUT1
A
4
18
16
157
13
OUT2
A
GND
GND
GND
GND
OUT2
B
OUT1
B
VS
A
POWER
GROUND
SIGNAL
GROUND
+
-
VS
8-52V
DC
VS
B
VCP
VBOOT
C
1
SENSE
A
17
6
5
14
3
12
19
SENSE
B
LOAD
8
D02IN1360
10
IN
A
IN2
B
IN2
A
2
IN1
A
1
IN1
B
IN
B
9
EN
B
EN
A
C
EN
R
EN
EN11
20
C
P
C
BOOT
R
P
D
2
D
1
C
2
OUT1
A
4
7
16
15
18
13
OUT1
B
GND
GND
GND
GND
OUT2
B
OUT2
A
VS
A
POWER
GROUND
SIGNAL
GROUND
+
-
VS
8-52V
DC
VS
B
VCP
VBOOT
C
1
SENSE
A
17
6
5
EN
B
1114
3
12
19
SENSE
B
8
EN
A
C
EN
R
EN
EN20
D02IN1366
1
IN1
A
IN2
B
10
IN1
B
9
IN2
A
2
LOAD
IN
15/21
L6205
OUTPUT CURRENT CAPABILITY AND IC POWER DISSIPATION
In Fig. 15 and Fig. 16 are shown the approximate relation between the output current and the IC power dissipa-
tion using PWM current control driving two loads, for two different driving types:
– One Full Bridge ON at a time (Fig. 15) in which only one load at a time is energized.
– Two Full Bridges ON at the same time (Fig. 16) in which two loads at the same time are energized.
For a given output current and driving type the power dissipated by the IC can be easily evaluated, in order to
establish which package should be used and how large must be the on-board copper dissipating area to guar-
antee a safe operating junction temperature (125°C maximum).
Figure 15. IC Power Dissipation versus Output Current with One Full Bridge ON at a time.
Figure 16. IC Power Dissipation versus Output Current with Two Full Bridges ON at the same time.
THERMAL MANAGEMENT
In most applications the power dissipation in the IC is the main factor that sets the maximum current that can be de-
liver by the device in a safe operating condition. Therefore, it has to be taken into account very carefully. Besides the
available space on the PCB, the right package should be chosen considering the power dissipation. Heat sinking can
be achieved using copper on the PCB with proper area and thickness. Figures 18, 19 and 20 show the Junction-to-
Ambient Thermal Resistance values for the PowerSO20, PowerDIP20 and SO20 packages.
For instance, using a PowerSO package with copper slug soldered on a 1.5 mm copper thickness FR4 board
with 6cm
2
dissipating footprint (copper thickness of 35µm), the R
th j-amb
is about 35°C/W. Fig. 17 shows mount-
ing methods for this package. Using a multi-layer board with vias to a ground plane, thermal impedance can be
reduced down to 15°C/W.
No PWM
f
SW
= 30 kHz (slow decay)
Test Conditions:
Supply Voltage = 24V
I
A
I
B
I
OUT
I
OUT
0 0.5 1 1.5 2 2.5 3
0
2
4
6
8
10
P
D
[W]
I
OUT
[A]
ONE FULL BRIDGE ON AT A TIME
No PWM
f
SW
= 30 kHz (slow decay)
Test Conditions:
Supply Voltage = 24V
I
A
I
B
I
OUT
I
OUT
00.511.522.53
0
2
4
6
8
10
P
D
[W]
I
OUT
[A]
TWO FULL BRIDGES ON AT THE SAME TIME
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

L6205D

Mfr. #:
Buy L6205D
Manufacturer:
STMicroelectronics
Description:
Motor / Motion / Ignition Controllers & Drivers Dual Full Bridge
Lifecycle:
New from this manufacturer.
Delivery:
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