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KAF-8300-CXB-CB-AA-OFFSET

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P28
KAF−8300
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13
DEFECT DEFINITIONS
Table 7. OPERATIONAL CONDITIONS
(The Defect Specifications are measured using the following conditions.)
Description Test Condition Notes
Integration Time (t
INT
) 33 ms Unless Otherwise Noted
Operating Temperature 60°C Unless Otherwise Noted
Table 8. SPECIFICATIONS
Description
Symbol Definition Threshold
Maximum
Number
Allowed
Notes
COLOR DEVICES
Point Defect
BPnt33_7 Dark Field, Minor, Short Integration Time 7.5 mV
800 Total
Points
Allowed for
this Group o
f
Tests
3
Point Defect Bfld_Pnt_D Dark Point in an Illuminated Field 11% 3
Point Defect Bfld_Pnt_B Bright Point in an Illuminated Field 7% 3
Point Defect BPnt33_100 Dark Field, Major, Short Integration Time 10 mV 3
Point Defect BPnt33_500 Dark Field, Major, Short Integration Time 500 mV 0 3
Point Defect BPnt333_13
Dark Field, Minor, Long Integration Time, t
INT
= 1/3 s
13 mV 32,500 1, 3, 4
Point Defect DR_BPnts Bright Point in the Dark Reference Region 7.5 mV 0 5
Cluster Defect Total_Clst A Cluster is a Group of 2 or more Defective Pixels
that do not Exceed the Perpendicular Pattern Defect
− 6 Total 3
Cluster Defect Dfld_Vperp Dark Field Very Long Exposure Bright Cluster where
9 or more Adjacent Point Defects Exist, Very Long
Integration Time, t
INT
= 1 s
3.04 mV 0 3
Cluster Defect −
Perpendicular Pattern
Defect
Dfld_Perp
Bfld_Perp
Total_Perp
Three or more Adjacent Point Defects in the Same
Color Plane, along a Row or Column
− 0 2, 3
Column Defect,
Illuminated
Bfld_Col_D
Bfld_Col_B
A Column which Deviates above or below
Neighboring Columns under Illuminated Conditions
(> 300 mV Signal) greater that the Threshold
1.5%
1.5%
0 3
Column Defect,
Dark Field
Dfld_Col2
Dfld_Col4
Lo_Col_B
Lo_Col_D
Lo_Col_B1
Lo_Col_D1
A Column which Deviates above or below
Neighboring Columns under Non-Illuminated or Low
Light Level Conditions (~10 mV) greater than the
Threshold
1 mV
1 mV
1 mV
1 mV
1 mV
1 mV
0 3
3
5
5
5
5
Row Defect Dfld_Row Row Defect if Row Average Deviates above
Threshold
1 mV 0 3
LOD Bright Col, Dark Dfld_LodCol Defines Functionality and Uniform Efficiency of LOD
Structure
1.5 mV 0 3
Streak Test, Color GrnStreak
RedStreak
BluStreak
Maximum Defect Density Gradient Allowed in a Color
Bit Plane (Note 4)
40%
20%
20%
0 Streak
Test,
Color
MONOCHROME DEVICES
Point Defect, Dark Field
BPnt33_7 Dark Field, Minor, Short Integration Time 7.5 mV 800
Point Defect, Dark Field BPnt33_100 Dark Field, Major, Short Integration Time 100 mV 6
Point Defect, Dark Field DfBP_33_200 Dark Field, Major, Short Integration Time 200 mV 0
Point Defect, Dark Field BPnt33_500 Dark Field, Major, Short Integration Time 500 mV 0
Point Defect,
Bright Field
Bfld_Pnt_D Dark Point in an Illuminated Field, Short Integration
Time
11% 800
Point Defect,
Bright Field
Bfld_Pnt_B Bright Point in an Illuminated Field, Short Integration
Time
7% 800
KAF−8300
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14
Table 8. SPECIFICATIONS (continued)
Description Notes
Maximum
Number
Allowed
ThresholdDefinitionSymbol
MONOCHROME DEVICES
Point Defect,
Dark Reference
DR_BPnts Bright Point in the Dark Reference Region 7.5 mV 0 5
Dim Points, Dark Field BPnt333_13
Dark Field, Minor, Long Integration Time, t
INT
= 1/3 s
13 mV 32,500
Total Points Bright and
Dark Points
BPnt33_7 + Bfld_Pnt_D + Bfld_Pnt_B − 800
Cluster Defect Total_Clst A Cluster is a Group of 2 or 10 Adjacent Defective
Dark or Bright Points
− 6
Perpendicular Pattern
Defect
Total_Perp Dark Field Very Long Exposure Bright Cluster where
9 or more Adjacent Point Defects Exist, Very Long
Integration Time, t
INT
= 1 s
3.04 mV 0
Column Defect,
Bright Field
Bfld_Col_D
Bfld_Col_B
A Column which Deviates above or below
Neighboring Columns under Illuminated Conditions
(> 300 mV Signal) greater that the Threshold
1.5%
1.5%
0
Column Defect,
Dark Field
Dfld_Col2
Dfld_Col4
Lo_Col_B
Lo_Col_D
Lo_Col_B1
Lo_Col_D1
A Column which Deviates above or below
Neighboring Columns under Non-Illuminated or Low
Light Level Conditions (~10 mV) greater than the
Threshold
1 mV
1 mV
1 mV
1 mV
1 mV
1 mV
0
5
5
5
5
Row Defect Dfld_Row Row Defect if Row Average Deviates above
Threshold
1 mV 0
LOD Bright Col, Dark Dfld_LodCol Defines Functionality and Uniform Efficiency of LOD
Structure
1.5 mV 0
1. This parameter is only a quality metric and these points will not be considered for cluster and point criteria.
2. For the color version of this device, the green pixels in a red row (GR) are considered a different color plane than the green pixels in a blue
row (GB). For monochrome version the entire active area is treated as a single color plane.
3. Operating temperature = 60°C.
4. As the gradient threshold is defined as 8.5 mV maximum across a 16 × 16 pixel region about each pixel.
5. Operating temperature = 25°C.
KAF−8300
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15
OPERATION
Table 9. ABSOLUTE MAXIMUM RATINGS
Description (Note 9) Symbol Minimum Maximum Unit Notes
Diode Pin Voltages V
DIODE
−17.5 17.5 V 1, 2
Gate Pin Voltages V
GATE1
−13.5 13.5 V 1, 3
Overlapping Gate Voltages V
1−2
−13.5 13.5 V 4
Non-Overlapping Gate Voltages V
g−g
−13.5 13.5 V 5
V1, V2 − LOD Voltages VV
VL
−13.5 13.5 V 6
Output Bias Current I
OUT
− −30 mA 7
LODT Diode Voltage V
LODT
−13.0 13.0 V 8
LODB Diode Voltage V
LODB
−18.0 18.0 V 8
Operating Temperature T
OP
−10 70 °C 10
Guaranteed Temperature of Performance T
SP
0 60 °C 11
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Referenced to pin SUB.
2. Includes pins: RD, VDD, VSS, and VOUT.
3. Includes pins: V1, V2, H1, H1L, H2, RG, OG.
4. Voltage difference between overlapping gates. Includes: V1 to V2; H1, H1L to H2; H1L to OG; V1 to H2.
5. Voltage difference between non-overlapping gates. Includes: V1 to H1, H1L; V2, OG to H2.
6. Voltage difference between V1 and V2 gates and LODT, LODB diode.
7. Avoid shorting output pins to ground or any low impedance source during operation. Amplifier bandwidth increases at higher currents and
lower load capacitance at the expense of reduced gain (sensitivity). Operation at these values will reduce MTF.
8. V1, H1, V2, H2, H1L, OG, and RD are tied to 0 V.
9. Absolute maximum rating is defined as a level or condition that should not be exceeded at any time per the description. If the level or condition
is exceeded, the device will be degraded and may be damaged.
10.Noise performance will degrade at higher temperatures.
11. See section for Imaging Performance Specifications.
Power-Up Sequence
The sequence chosen to perform an initial power-up is not
critical for device reliability. A coordinated sequence may
minimize noise and the following sequence is
recommended:
1. Connect the ground pins (SUB).
2. Supply the appropriate biases and clocks to the
remaining pins.
Table 10. DC BIAS OPERATING CONDITIONS
Description Symbol Minimum Nominal Maximum Unit
Maximum DC
Current (mA)
Notes
Reset Drain RD 11.3 11.5 11.7 V I
RD
= 0.01
Output Amplifier Return V
SS
1.05 1.25 1.45 V I
SS
= −3.0
Output Amplifier Supply V
DD
14.5 15.0 15.5 V I
OUT
+ I
SS
Substrate SUB − GND − V −0.01 2
Output Gate OG −3.0 −2.8 −2.6 V 0.1
Lateral Drain LODT, LODB 9.5 9.75 10.0 V 0.2 2
Video Output Current I
OUT
−3 −5 −8 mA − 1
1. An output load sink must be applied to VOUT to activate output amplifier − see Figure 5.
2. Maximum current expected up to saturation exposure (E
SAT
).
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P28

KAF-8300-CXB-CB-AA-OFFSET

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Buy KAF-8300-CXB-CB-AA-OFFSET
Manufacturer:
ON Semiconductor
Description:
Image Sensors FULL FRAME CCD IMAGE SENSOR
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