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VND1NV04-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33
Electrical specifications VND1NV04 - VNN1NV04 - VNS1NV04
10/33 Doc ID 7381 Rev 4
Figure 5.
Test circuit for diode recovery times
Figure 6. Unclamped inductive load test circuits
L=100uH
A
B
8.5
Ω
V
DD
R
gen
FAST
DIODE
OMNIFET
A
D
I
S
330
Ω
B
OMNIFET
D
S
I
V
gen
R
GEN
P
W
V
IN
VND1NV04 - VNN1NV04 - VNS1NV04 Electrical specifications
Doc ID 7381 Rev 4 11/33
Figure 7. Input charge test circuit
Figure 8. Unclamped inductive waveforms
GEN
ND8003
V
IN
Electrical specifications VND1NV04 - VNN1NV04 - VNS1NV04
12/33 Doc ID 7381 Rev 4
2.4 Electrical characteristics curves
Figure 9. Source-drain diode forward
characteristics
Figure 10. Static drain-source on resistance
Figure 11. Derating curve Figure 12. Static drain-source on resistance
vs. input voltage (part 1/2)
Figure 13. Static drain-source on resistance
vs. input voltage (part 2/2)
Figure 14. Transconductance
02468101214
Id (A)
700
750
800
850
900
950
1000
Vsd (mV)
Vin=0V
0 0.05 0.1 0.15 0.2 0.25 0.3
Id(A)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Rds(on) (ohms)
Tj=25ºC
Tj=150ºC
Tj=-40ºC
Vin=2.5V
3 3.5 4 4.5 5 5.5 6 6.5
Vin(V)
0
50
100
150
200
250
300
350
400
450
500
Rds(on) (mohms)
Id=1.5A
Id=1A
Id=1.5A
Id=1A
Id=1.5A
Id=1A
Tj=25ºC
Tj=150ºC
Tj=-40ºC
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
Id(A)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Gfs (S)
Vds=13V
Tj=25ºC
Tj=150ºC
Tj=-40ºC
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33

VND1NV04-E

Mfr. #:
Buy VND1NV04-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers OMNIFETII FULLY AUTO PROTECT Pwr MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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