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VND1NV04-E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P30
P31-P33
Package and PCB thermal data
VND1NV04 - VNN1NV
04 - VNS1NV04
22/33
Doc ID 738
1 Rev 4
4.3 SO-8
thermal
dat
a
Figure 38.
SO-8 PC board
1.
Layout condition of R
th
and Z
th
measurements (PCB FR4 area = 58 mm x 58 mm,PCB thickness = 2 mm,
Cu thickness=35 µm , Copper areas: from mini
mum pad layout to 2 cm
2
).
Figure 39.
SO-8 R
thj-
amb
vs. PCB copper a
rea in open box fr
ee air condi
tion
.
65
75
85
95
105
00
,
5
11
,
5
2
2
,
5
P
C
B
C
u
h
eat
s
i
n
k area (c
m^
2)
-
(
ref
er to
P
C
B
l
ay
o
u
t
)
fo
ot
print
VND1NV04 - VNN1N
V04 - VNS1NV04
Package and PCB thermal data
Doc I
D 7381 R
ev 4
2
3/33
Figure 40.
SO-8
thermal impedanc
e junction ambient
single pulse
Equation 3: P
ulse cal
culation
formula
where
δ
= t
P
/T
Figure 41.
SO-8 thermal fi
tting model of a singl
e channel
ZT
H
(
°
C
/
W
)
0,1
1
10
100
1000
0,
0001
0,
001
0,
01
0,
1
1
10
100
1000
Tim
e
(s
)
Footprint
2 cm
2
Z
TH
δ
R
TH
δ
Z
THtp
1
δ
–
()
+
⋅
=
Package and PCB thermal data
VND1NV04 - VNN1NV
04 - VNS1NV04
24/33
Doc ID 738
1 Rev 4
T
able 7.
SO-8 thermal p
arameter
Area/island
(cm
2
)F
P
2
R1 (°C/W)
0.8
R2 (°C/W)
2.6
R3 (°C/W)
3.5
R4 (°C/W)
21
R5 (°C/W)
16
R6 (°C/W)
58
28
C1 (W·
s/°C)
0.00006
C2 (W·
s/°C)
0.0005
C3 (W·
s/°C)
0.0075
C4 (W·
s/°C)
0.045
C5 (W·
s/°C)
0.35
C6 (W·
s/°C)
1.05
2
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P30
P31-P33
VND1NV04-E
Mfr. #:
Buy VND1NV04-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers OMNIFETII FULLY AUTO PROTECT Pwr MOSFET
Lifecycle:
New from this manufacturer.
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