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VND1NV04-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33
VND1NV04 - VNN1NV04 - VNS1NV04 Package and PCB thermal data
Doc ID 7381 Rev 4 19/33
Table 5. DPAK thermal parameter
4.2 SOT-223 thermal data
Figure 34. SOT-223
PC board
1. Layout condition of R
th
and Z
th
measurements (PCB FR4 area = 58 mm x 58 mm,PCB thickness = 2 mm,
Cu thickness=35 µm , Copper areas: from minimum pad layout to 0.8 cm
2
).
Area/island (cm
2
)0.256
R1 (°C/W) 0.8
R2 (°C/W) 1.6
R3 (°C/W) 0.8
R4 (°C/W) 2
R5 (°C/W) 15
R6 (°C/W) 61 24
C1 (W·s/°C) 0.00006
C2 (W·s/°C) 0.0005
C3 (W·s/°C) 0.01
C4 (W·s/°C) 0.3
C5 (W·s/°C) 0.45
C6 (W·s/°C) 0.8 5
.
Package and PCB thermal data VND1NV04 - VNN1NV04 - VNS1NV04
20/33 Doc ID 7381 Rev 4
Figure 35. SOT-223 R
thj-amb
vs. PCB copper area in open box free air condition
Figure 36. SOT-223 thermal impedance junction ambient single pulse
60
70
80
90
100
110
120
130
140
0 0,5 1 1,5 2 2,5
PCB Cu heatsink area (cm^2) - (refer to PCB layout)
footprint
0,1
1
10
100
1000
0,0001 0,001 0,01 0,1 1 10 100 1000
Time (s)
ZTH (°C/ W)
Footprint
2 cm
2
VND1NV04 - VNN1NV04 - VNS1NV04 Package and PCB thermal data
Doc ID 7381 Rev 4 21/33
Equation 2: Pulse calculation formula
where δ = t
P
/T
Figure 37. SOT-223 thermal fitting model of a single channel
Table 6. SOT-223 thermal parameter
Area/island (cm
2
)FP2
R1 (°C/W) 0.8
R2 (°C/W) 1.6
R3 (°C/W) 4.5
R4 (°C/W) 24
R5 (°C/W) 0.1
R6 (°C/W) 100 45
C1 (W·s/°C) 0.00006
C2 (W·s/°C) 0.0005
C3 (W·s/°C) 0.03
C4 (W·s/°C) 0.16
C5 (W·s/°C) 1000
C6 (W·s/°C) 0.5 2
Z
THδ
R
TH
δ Z
THtp
1 δ–()+⋅=
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33

VND1NV04-E

Mfr. #:
Buy VND1NV04-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers OMNIFETII FULLY AUTO PROTECT Pwr MOSFET
Lifecycle:
New from this manufacturer.
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