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VND1NV04-E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P30
P31-P33
VND1NV04 -
VNN1NV04
- VNS1NV04
Electrica
l specifica
tions
Doc I
D 7381 R
ev 4
1
3/33
Figur
e 15.
St
at
ic drain-so
urce on res
istance
vs. Id
Figure 16.
T
rans
fer characte
ristics
Figur
e 17.
T
urn-on curr
ent slope (
p
art 1/2)
Figure 18.
T
urn-on cu
rrent slop
e (part 2/2)
Figure 19.
Input voltage v
s. input charge
Figure
20.
T
urn-off drain source volt
age slope
(pa
rt 1/2)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
Id(A
)
0
50
100
150
200
250
300
350
400
450
500
Rds(
on) (moh
ms)
Tj=2
5ºC
Tj=150ºC
Tj=-40ºC
Vin=5V
Vin=3.
5V
Vin=5V
Vin=5V
Vin=3.5V
Vin=3.
5V
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
Vin(
V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
Id
on(A)
Vd
s=13
.5V
Tj=150ºC
Tj=25º
C
Tj=-40ºC
0
500
1000
1500
2000
250
0
Rg(ohm)
0
1
2
3
4
5
6
di/dt(
A/us)
Vin=
5V
Vdd=15V
Id=1.5A
0
500
1000
1500
2000
2500
Rg(ohm)
0.2
0.4
0.6
0.8
1
1.2
1.4
di/dt(A/us)
Vin=3.5V
Vdd=15V
Id=1.5A
0
123
4
5
6
Qg (nC)
0
1
2
3
4
5
6
Vin (V)
Vds=12V
Id=
0.5A
0
500
1000
1500
2000
2500
Rg(ohm)
0
50
100
150
200
250
300
350
dv/dt(V
/us)
Vin=5V
Vdd=15V
Id=0.5A
Electric
al specific
ations
VND1NV04 -
VNN1NV04 -
VNS1NV04
14/33
Doc ID 738
1 Rev 4
Figure 21.
T
urn-off drain-sour
ce volt
age slope
(p
art 2/
2)
Figure 22.
Capacit
a
nce variat
ions
Figure 23
.
Switching time
resistive lo
ad
(p
art 1/
2)
Figure 24.
Sw
itching time r
esistive loa
d
(pa
rt 2/2)
Figure 25
.
Output charac
teristics
Figure 26.
Norm
alized on r
esist
ance vs
.
temperature
0
5
00
1000
150
0
2000
2500
Rg(ohm)
0
50
100
150
200
250
300
350
dv/dt(V/us)
Vin=3.5V
Vdd=15V
Id=
0.
5A
0
5
10
15
20
25
30
3
5
Vds(V)
50
75
100
125
150
175
200
225
C(pF)
f=1MHz
Vin=
0V
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(o
hm)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
t(us)
Vdd=15V
Id=0.5A
Vin
=5V
td(o
ff)
td(on
)
tf
tr
3.25
3.5
3.75
4
4.
25
4.5
4.75
5
5.25
Vin(V)
0
50
100
150
200
250
300
350
400
450
500
550
t(ns)
Vdd=15
V
Id=0.5A
Rg=330ohm
tr
td(off)
tf
td(o
n)
0
1
23456789
1
0
1
1
1
2
VDS(V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
ID(A)
Vin=3V
Vin=
5.5V
Vin=3.
5V
Vin=
4.5V
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
0.5
0.75
1
1.25
1.5
1.75
2
2.25
Rds(on) (mOhm
)
Vin=5V
Id=0.5A
VND1NV04 -
VNN1NV04
- VNS1NV04
Electrica
l specifica
tions
Doc I
D 7381 R
ev 4
1
5/33
Figure 27.
Normalized input threshold volt
age
vs. temper
ature
Figure 28.
Norm
alized curre
nt limit vs.
junction temperature
Figur
e 29.
S
tep resp
onse curr
ent limit
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Vinth (V)
Vds=Vin
Id=1
mA
-50
-
25
0
25
50
75
100
125
150
175
Tc
(
º
C
)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Ili
m (
A)
Vin=5V
Vds=13V
5
1
01
52
02
5
3
03
5
Vdd(V)
1.9
2
2.1
2.2
2.3
2.4
Tdlim(u
s)
Vin=5V
Rg=330ohm
P1-P3
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P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P30
P31-P33
VND1NV04-E
Mfr. #:
Buy VND1NV04-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers OMNIFETII FULLY AUTO PROTECT Pwr MOSFET
Lifecycle:
New from this manufacturer.
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