HEF4516B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 11 November 2011 6 of 17
NXP Semiconductors
HEF4516B
Binary up/down counter
7. Limiting values
[1] For DIP16 package: P
tot
derates linearly with 12 mW/K above 70 C.
[2] For SO16 package: P
tot
derates linearly with 8 mW/K above 70 C.
8. Recommended operating conditions
Logic equation for terminal count:
.
Fig 5. State diagram
001aae692
0
15
14
13
12
count up
count down
1 2 3 4
5
6
7
11 10 9 8
TC CE UP DNQ0 Q1 Q2 Q3 UP DNQ0 Q1 Q2 Q3+=
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage 0.5 +18 V
I
IK
input clamping current V
I
< 0.5 V or V
I
>V
DD
+ 0.5 V - 10 mA
V
I
input voltage 0.5 V
DD
+ 0.5 V
I
OK
output clamping current V
O
< 0.5 V or V
O
>V
DD
+ 0.5 V - 10 mA
I
I/O
input/output current - 10 mA
I
DD
supply current - 50 mA
T
stg
storage temperature 65 +150 C
T
amb
ambient temperature 40 +85 C
P
tot
total power dissipation DIP16 package
[1]
-750mW
SO16 package
[2]
-500mW
P power dissipation per output - 100 mW
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
DD
supply voltage 3 - 15 V
V
I
input voltage 0 - V
DD
V
T
amb
ambient temperature in free air 40 - +85 C
