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HEF4516BT,653

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
HEF4516B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 11 November 2011 7 of 17
NXP Semiconductors
HEF4516B
Binary up/down counter
9. Static characteristics
t/V input transition rise and fall rate V
DD
= 5 V - - 3.75 s/V
V
DD
= 10 V - - 0.5 s/V
V
DD
= 15 V - - 0.08 s/V
Table 5. Recommended operating conditions
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 6. Static characteristics
V
SS
= 0 V; V
I
= V
SS
or V
DD
unless otherwise specified.
Symbol Parameter Conditions V
DD
T
amb
= 40 C T
amb
= 25 C T
amb
= 85 C Unit
Min Max Min Max Min Max
V
IH
HIGH-level input voltage I
O
< 1 A 5 V 3.5 - 3.5 - 3.5 - V
10 V 7.0 - 7.0 - 7.0 - V
15 V 11.0 - 11.0 - 11.0 - V
V
IL
LOW-level input voltage I
O
< 1 A 5 V - 1.5 - 1.5 - 1.5 V
10 V - 3.0 - 3.0 - 3.0 V
15 V - 4.0 - 4.0 - 4.0 V
V
OH
HIGH-level output voltage I
O
< 1 A;
V
I
=V
SS
or V
DD
5 V 4.95 - 4.95 - 4.95 - V
10 V 9.95 - 9.95 - 9.95 - V
15 V 14.95 - 14.95 - 14.95 - V
V
OL
LOW-level output voltage I
O
< 1 A;
V
I
=V
SS
or V
DD
5 V - 0.05 - 0.05 - 0.05 V
10 V - 0.05 - 0.05 - 0.05 V
15 V - 0.05 - 0.05 - 0.05 V
I
OH
HIGH-level output current V
O
= 2.5 V 5 V - 1.7 - 1.4 - 1.1 mA
V
O
= 4.6 V 5 V - 0.52 - 0.44 - 0.36 mA
V
O
= 9.5 V 10 V - 1.3 - 1.1 - 0.9 mA
V
O
= 13.5 V 15 V - 3.6 - 3.0 - 2.4 mA
I
OL
LOW-level output current V
O
= 0.4 V 5 V 0.52 - 0.44 - 0.36 - mA
V
O
= 0.5 V 10 V 1.3 - 1.1 - 0.9 - mA
V
O
= 1.5 V 15 V 3.6 - 3.0 - 2.4 - mA
I
I
input leakage current V
DD
= 15 V 15 V - 0.3 - 0.3 - 1.0 A
I
DD
supply current I
O
= 0 A;
V
I
=V
SS
or V
DD
5 V - 20 - 20 - 150 A
10 V - 40 - 40 - 300 A
15 V - 80 - 80 - 600 A
C
I
input capacitance - - - - 7.5 - - pF
HEF4516B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 11 November 2011 8 of 17
NXP Semiconductors
HEF4516B
Binary up/down counter
10. Dynamic characteristics
Table 7. Dynamic characteristics
V
SS
= 0 V; T
amb
= 25
C; for test circuit see Figure 8; unless otherwise specified.
Symbol Parameter Conditions V
DD
Extrapolation formula Min Typ Max Unit
t
PHL
HIGH to LOW
propagation delay
CP to Qn 5 V
[1]
118 ns + (0.55 ns/pF)C
L
- 145 290 ns
10 V 49 ns + (0.23 ns/pF)C
L
- 60 120 ns
15 V 37 ns + (0.16 ns/pF)C
L
-4590ns
CP to TC
5 V 233 ns + (0.55 ns/pF)C
L
- 260 525 ns
10 V 94 ns + (0.23 ns/pF)C
L
- 105 210 ns
15 V 67 ns + (0.16 ns/pF)C
L
- 75 150 ns
PL to Qn 5 V 98 ns + (0.55 ns/pF)C
L
- 125 255 ns
10 V 44 ns + (0.23 ns/pF)C
L
- 55 110 ns
15 V 32 ns + (0.16 ns/pF)C
L
-4085ns
PL to TC
5 V 223 ns + (0.55 ns/pF)C
L
- 250 500 ns
10 V 99 ns + (0.23 ns/pF)C
L
- 110 220 ns
15 V 72 ns + (0.16 ns/pF)C
L
- 80 160 ns
CE
to TC 5 V 138 ns + (0.55 ns/pF)C
L
- 165 330 ns
10 V 54 ns + (0.23 ns/pF)C
L
- 65 135 ns
15 V 42 ns + (0.16 ns/pF)C
L
- 50 100 ns
MR to Qn, TC
5 V 178 ns + (0.55 ns/pF)C
L
- 205 405 ns
10 V 54 ns + (0.23 ns/pF)C
L
- 65 130 ns
15 V 37 ns + (0.16 ns/pF)C
L
-4585ns
t
PLH
LOW to HIGH
propagation delay
CP to Qn 5 V
[1]
128 ns + (0.55 ns/pF)C
L
- 155 310 ns
10 V 54 ns + (0.23 ns/pF)C
L
- 65 130 ns
15 V 37 ns + (0.16 ns/pF)C
L
-4590ns
CP to TC
5 V 153 ns + (0.55 ns/pF)C
L
- 180 360 ns
10 V 64 ns + (0.23 ns/pF)C
L
- 75 150 ns
15 V 47 ns + (0.16 ns/pF)C
L
- 55 115 ns
PL to Qn 5 V 143 ns + (0.55 ns/pF)C
L
- 170 340 ns
10 V 59 ns + (0.23 ns/pF)C
L
- 70 140 ns
15 V 42 ns + (0.16 ns/pF)C
L
- 50 105 ns
PL to TC
5 V 223 ns + (0.55 ns/pF)C
L
- 250 500 ns
10 V 99 ns + (0.23 ns/pF)C
L
- 110 220 ns
15 V 72 ns + (0.16 ns/pF)C
L
- 80 160 ns
CE
to TC 5 V 118 ns + (0.55 ns/pF)C
L
- 145 290 ns
10 V 49 ns + (0.23 ns/pF)C
L
- 60 125 ns
15 V 37 ns + (0.16 ns/pF)C
L
-4595ns
MR to TC
5 V 198 ns + (0.55 ns/pF)C
L
- 225 450 ns
10 V 64 ns + (0.23 ns/pF)C
L
- 75 150 ns
15 V 42 ns + (0.16 ns/pF)C
L
- 50 100 ns
HEF4516B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 11 November 2011 9 of 17
NXP Semiconductors
HEF4516B
Binary up/down counter
[1] The typical values of the propagation delay and transition times are calculated from the extrapolation formulas shown (C
L
in pF).
t
t
transition time 5 V
[1]
10 ns + (1.00 ns/pF)C
L
- 60 120 ns
10 V 9 ns + (0.42 ns/pF)C
L
-3060ns
15 V 6 ns + (0.28 ns/pF)C
L
-2040ns
f
max
maximum frequency see Figure 6 5 V 3 6 - MHz
10 V 7 14 - MHz
15 V 9 18 - MHz
t
W
pulse width CP input LOW;
minimum width;
see Figure 6
5 V 95 45 - ns
10 V 35 20 - ns
15 V 25 15 - ns
PL input HIGH;
minimum width;
see Figure 7
5 V 105 55 - ns
10 V 45 25 - ns
15 V 35 15 - ns
MR input HIGH;
minimum width;
see Figure 7
5 V 120 60 - ns
10 V 50 25 - ns
15 V 40 20 - ns
t
rec
recovery time MR input;
see Figure 7
5 V 130 65 - ns
10 V 45 20 - ns
15 V 30 15 - ns
PL input;
see Figure 7
5 V 150 75 - ns
10 V 50 25 - ns
15 V 30 15 - ns
t
su
set-up time Dn to PL;
see Figure 7
5 V 100 50 - ns
10 V 50 25 - ns
15 V 40 20 - ns
UP/DN
to CP;
see Figure 6
5 V 250 125 - ns
10 V 100 50 - ns
15 V 75 35 - ns
CE
to CP;
see Figure 6
5 V 120 60 - ns
10 V 40 20 - ns
15 V 25 10 - ns
t
h
hold time Dn to PL;
see Figure 7
5 V +10 40 - ns
10 V +5 20 - ns
15 V 0 20 - ns
UP/DN
to CP;
see Figure 6
5 V +35 90 - ns
10 V +15 35 - ns
15 V +15 25 - ns
CE
to CP;
see Figure 6
5 V +20 40 - ns
10 V +5 15 - ns
15 V +5 10 - ns
Table 7. Dynamic characteristics
…continued
V
SS
= 0 V; T
amb
= 25
C; for test circuit see Figure 8; unless otherwise specified.
Symbol Parameter Conditions V
DD
Extrapolation formula Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

HEF4516BT,653

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Manufacturer:
NXP Semiconductors
Description:
Counter Shift Registers BINARY U/D COUNTER
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