Pin Assignments and Descriptions
Table 6: Pin Assignments
200-Pin DDR2 SODIMM Front 200-Pin DDR2 SODIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1 V
REF
51 DQS2 101 A1 151 DQ42 2 V
SS
52 DM2 102 A0 152 DQ46
3 V
SS
53 V
SS
103 V
DD
153 DQ43 4 DQ4 54 V
SS
104 V
DD
154 DQ47
5 DQ0 55 DQ18 105 A10 155 V
SS
6 DQ5 56 DQ22 106 BA1 156 V
SS
7 DQ1 57 DQ19 107 BA0 157 DQ48 8 V
SS
58 DQ23 108 RAS# 158 DQ52
9 V
SS
59 V
SS
109 WE# 159 DQ49 10 DM0 60 V
SS
110 S0# 160 DQ53
11 DQS0# 61 DQ24 111 V
DD
161 V
SS
12 V
SS
62 DQ28 112 V
DD
162 V
SS
13 DQS0 63 DQ25 113 CAS# 163 NC 14 DQ6 64 DQ29 114 ODT0 164 CK1
15 V
SS
65 V
SS
115 S1# 165 V
SS
16 DQ7 66 V
SS
116 NC 166 CK1#
17 DQ2 67 DM3 117 V
DD
167 DQS6# 18 V
SS
68 DQS3# 118 V
DD
168 V
SS
19 DQ3 69 NC 119 ODT1 169 DQS6 20 DQ12 70 DQS3 120 NC 170 DM6
21 V
SS
71 V
SS
121 V
SS
171 V
SS
22 DQ13 72 V
SS
122 V
SS
172 V
SS
23 DQ8 73 DQ26 123 DQ32 173 DQ50 24 V
SS
74 DQ30 124 DQ36 174 DQ54
25 DQ9 75 DQ27 125 DQ33 175 DQ51 26 DM1 76 DQ31 126 DQ37 176 DQ55
27 V
SS
77 V
SS
127 V
SS
177 V
SS
28 V
SS
78 V
SS
128 V
SS
178 V
SS
29 DQS1# 79 CKE0 129 DQS4# 179 DQ56 30 CK0 80 CKE1 130 DM4 180 DQ60
31 DQS1 81 V
DD
131 DQS4 181 DQ57 32 CK0# 82 V
DD
132 V
SS
182 DQ61
33 V
SS
83 NC 133 V
SS
183 V
SS
34 V
SS
84 NC 134 DQ38 184 V
SS
35 DQ10 85 NC/BA2
1
135 DQ34 185 DM7 36 DQ14 86 NC 136 DQ39 186 DQS7#
37 DQ11 87 V
DD
137 DQ35 187 V
SS
38 DQ15 88 V
DD
138 V
SS
188 DQS7
39 V
SS
89 A12 139 V
SS
189 DQ58 40 V
SS
90 A11 140 DQ44 190 V
SS
41 V
SS
91 A9 141 DQ40 191 DQ59 42 V
SS
92 A7 142 DQ45 192 DQ62
43 DQ16 93 A8 143 DQ41 193 V
SS
44 DQ20 94 A6 144 V
SS
194 DQ63
45 DQ17 95 V
DD
145 V
SS
195 SDA 46 DQ21 96 V
DD
146 DQS5# 196 V
SS
47 V
SS
97 A5 147 DM5 197 SCL 48 V
SS
98 A4 148 DQS5 198 SA0
49 DQS2# 99 A3 149 V
SS
199 V
DDSPD
50 NC 100 A2 150 V
SS
200 SA1
Note:
1. Pin 85 is NC for 256MB and 512MB or BA2 for 1GB.
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Pin Assignments and Descriptions
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
Pin Descriptions
The pin description table below is a comprehensive list of all possible pins for all DDR2
modules. All pins listed may not be supported on this module. See Pin Assignments for
information specific to this module.
Table 7: Pin Descriptions
Symbol Type Description
Ax Input
Address inputs: Provide the row address for ACTIVE commands, and the column ad-
dress and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments Table for density-specific
addressing information.
BAx Input
Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, and MR3) is loaded during the LOAD MODE command.
CKx,
CK#x
Input
Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.
CKEx Input
Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circui-
try and clocks on the DDR2 SDRAM.
DMx, Input
Data mask (x8 devices only): DM is an input mask signal for write data. Input data
is masked when DM is sampled HIGH, along with that input data, during a write ac-
cess. Although DM pins are input-only, DM loading is designed to match that of the
DQ and DQS pins.
ODTx Input
On-die termination: Enables (registered HIGH) and disables (registered LOW) termi-
nation resistance internal to the DDR2 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input
will be ignored if disabled via the LOAD MODE command.
Par_In Input
Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.
RAS#, CAS#, WE# Input
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
RESET# Input
Reset: Asynchronously forces all registered outputs LOW when RESET# is LOW. This
signal can be used during power-up to ensure that CKE is LOW and DQ are High-Z.
S#x Input
Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.
SAx Input
Serial address inputs: Used to configure the SPD EEPROM address range on the I
2
C
bus.
SCL Input
Serial clock for SPD EEPROM: Used to synchronize communication to and from the
SPD EEPROM on the I
2
C bus.
CBx I/O
Check bits. Used for system error detection and correction.
DQx I/O
Data input/output: Bidirectional data bus.
DQSx,
DQS#x
I/O
Data strobe: Travels with the DQ and is used to capture DQ at the DRAM or the con-
troller. Output with read data; input with write data for source synchronous opera-
tion. DQS# is only used when differential data strobe mode is enabled via the LOAD
MODE command.
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Pin Descriptions
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
Table 7: Pin Descriptions (Continued)
Symbol Type Description
SDA I/O
Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on
the I
2
C bus.
RDQSx,
RDQS#x
Output
Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Err_Out# Output
(open drain)
Parity error output: Parity error found on the command and address bus.
V
DD
/V
DDQ
Supply
Power supply: 1.8V ±0.1V. The component V
DD
and V
DDQ
are connected to the mod-
ule V
DD
.
V
DDSPD
Supply
SPD EEPROM power supply: 1.7–3.6V.
V
REF
Supply
Reference voltage: V
DD
/2.
V
SS
Supply Ground.
NC
No connect: These pins are not connected on the module.
NF
No function: These pins are connected within the module, but provide no functionality.
NU
Not used: These pins are not used in specific module configurations/operations.
RFU
Reserved for future use.
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Pin Descriptions
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.

MT8HTF6464HDY-40EB4

Mfr. #:
Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 512MB 200SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
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