2
RF Device Data
Freescale Semiconductor, Inc.
MHT1008N
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +65 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
–65 to +150 C
Case Operating Temperature Range T
C
–40 to +150 C
Operating Junction Temperature Range
(1,2)
T
J
–40 to +150 C
Total Device Dissipation @ T
C
=25C
Derate above 25C
P
D
48.1
0.38
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 88C, 12.5 W CW, 28 Vdc, I
DQ
= 110 mA, 2450 MHz
R
JC
2.6 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1B, passes 500 V
Machine Model (per EIA/JESD22--A115) A, passes 50 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Moisture Sen sitivity Level (MSL)
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C
Table 5. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=32Vdc,V
GS
=0Vdc)
I
DSS
— — 1 Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 Adc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 15.4 Adc)
V
GS(th)
0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(V
DS
=28Vdc,I
D
=90mAdc)
V
GS(Q)
— 1.8 — Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
= 154 mAdc)
V
DS(on)
0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available a t http://www.nxp.com/RF/calculators
.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power A mplifiers. Go to http://www.nxp.com/RF
and search for AN1955.
