MHT1008N
5
RF Device Data
Freescale Semiconductor, Inc.
Table 9. Load Pull Performance — Maximum Power Tuning
V
DD
=28Vdc,I
DQ
=110mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
PAE
(%)
2400 1.17 – j4.20 1.06 + j3.49 5.82 + j0.19 19.6 42.2 17 58.5 57.6
2450 1.32 – j4.43 1.02 + j3.75 5.72 – j0.22 19.1 42.1 16 56.3 55.4
2500 1.31 – j4.68 1.11 + j4.20 5.38 – j0.45 19.1 42.0 16 56.0 55.7
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
PAE
(%)
2400 1.17 – j4.20 0.99 + j3.85 6.57 – j0.19 17.5 42.9 20 57.5 56.2
2450 1.32 – j4.43 0.94 + j4.07 6.48 – j0.57 17.0 42.8 19 56.1 54.8
2500 1.31 – j4.68 1.03 + j4.53 6.16 – j0.78 17.0 42.7 19 55.6 54.5
(1) Load impedance f or optimum P1dB power.
(2) Load impedance f or optimum P3dB power.
Z
source
= Measured impedance presented to the input of th e device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 10. Load Pull Performance — Maximum Efficiency Tuning
V
DD
=28Vdc,I
DQ
=110mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
PAE
(%)
2400 1.17 – j4.20 0.84 + j3.37 3.81 + j2.36 20.9 41.2 13 64.1 63.6
2450 1.32 – j4.43 0.84 + j3.64 4.11 + j1.95 20.4 41.2 13 62.0 61.4
2500 1.31 – j4.68 0.93 + j4.07 3.77 + j1.47 20.3 41.2 13 61.6 61.0
f
(MHz)
Z
source
()
Z
in
()
Max Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
PAE
(%)
2400 1.17 – j4.20 0.81 + j3.70 4.18 + j2.19 18.8 42.0 16 63.4 62.6
2450 1.32 – j4.43 0.81 + j3.94 4.43 + j1.56 18.2 42.1 16 61.5 60.6
2500 1.31 – j4.68 0.89 + j4.39 3.96 + j1.16 18.1 41.9 16 61.2 60.2
(1) Load impedance f or optimum P1dB efficiency.
(2) Load impedance f or optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of th e device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
