OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MHT1008NT1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
MHT1008N
7
RF Device Data
Freescale Semiconductor, Inc.
2450 MHz REFERENCE CIRCUIT — 35 (7.6 cm 12.7 cm)
Table 11. 2450 MHz Performance (In Freescale Reference Circuit, 50 ohm system)
V
DD
=28Vdc,I
DQ
=110mA,T
A
=25C
Frequency
(MHz)
P
in
(dBm)
G
ps
(dB)
D
(%)
PAE
(%)
P
out
(W)
2400 22.5 18.5 58.7 57.5 12.5
2450 22.5 18.6 57.2 56.3 12.5
2500 22.7 18.3 56.3 55.6 12.5
Table 12. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
VSWR
P
in
(dBm) Test Voltage, V
DD
Result
2450 CW > 5:1 at all
Phase Angles
26
(3 dB Overdrive)
32 No Device
Degradation
8
RF Device Data
Freescale Semiconductor, Inc.
MHT1008N
2450 MHz REFERENCE CIRCUIT — 35 (7.6 cm 12.7 cm)
Figure 7. MHT1008N Reference Circuit Component Layout — 2450 MHz
*C1 and C2 are mounted vertically.
D70982
C2*
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
R1
C1*
MHT1008N
Rev. 0
Table 13. MHT1008N Reference Circuit Component Designations and Values — 2450 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5 6.8 pF Chip Capacitors ATC100B6R8CT1500XT ATC
C6, C7, C8 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C9, C10 220 F Electrolytic Capacitors 227CKS050M Illinois Capacitor
C11 1.0 pF Chip Capacitor ATC100B1R0BT1500XT ATC
C12 1.3 pF Chip Capacitor ATC100B1R3BT1500XT ATC
Q1 RF Power LDMOS Transistor MHT1008N NXP
R1 4.7 , 1/4 W Chip Resistor CRCW12064R70FKEA Vishay
PCB Rogers RO4350B, 0.020,
r
=3.66 D70982 MTL
MHT1008N
9
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2450 MHz REFERENCE CIRCUIT
2390
G
ps
f, FREQUENCY (MHz)
Figure 8. Power Gain, Power Added Efficiency and Output Power
versus Frequency at a Constant Input Power
14
22
12
70
65
60
55
15
14
13
PAE, POWER ADDED
EFFICIENCY (%)
PAE
G
ps
, P OWER GAIN (dB)
21
19
2430 2470
P
out
,OUTPUT
POWER (WATTS)
V
DD
=28Vdc,P
in
=0.25W,I
DQ
=110mA
P
out
20
18
17
16
2450
2410 25102490
15
50
0
0
V
GS
, GATE--SOURCE VOLTAGE (VOLTS)
Figure 9. Output Power versus Gate--Source Voltage
16
1
2
14
12
2
P
out
, OUTPUT POWER (WATTS)
f = 2450 MHz
V
DD
=28Vdc
P
in
=24dBm
0
0
Detail A
f = 2450 MHz
Detail A
P
out
, OUTPUT POWER (WATTS)
V
GS
, GATE--SOURCE VOLTAGE (VOLTS)
10
V
DD
=28Vdc
P
in
=21dBm
10.2
6
8
10
3
4
2
0.4
0.6
4
6
8
V
DD
=28Vdc
P
in
=24dBm
V
DD
=28Vdc
P
in
=21dBm
0.8
0.5 1.5 2.5
Figure 10. Power Gain, Power Added Efficiency and
Input Power versus Output Power and Frequency
P
out
, OUTPUT POWER (WATTS)
G
ps
, P OWER GAIN (dB)
15
18
17
120
G
ps
25
30
10
15
21
20
19
25
55
65
10
P
in
16
P
in
, INPUT
POWER (WATTS)
22
14
12
45
35
20
PAE, POWER ADDED
EFFICIENCY (%)
PAE
f = 2400 MHz
V
DD
=28Vdc,I
DQ
=110mA
f = 2400 MHz
2450 MHz
2500 MHz
2500 MHz
2400 MHz
2450 MHz
2400 MHz
2450 MHz
2500 MHz
13
15
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MHT1008NT1

Mfr. #:
Buy MHT1008NT1
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet