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MHT1008NT1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
10
RF Device Data
Freescale Semiconductor, Inc.
MHT1008N
TYPICAL CHARACTERISTICS — 2450 MHz REFERENCE CIRCUIT
Figure 11. Power Gain, Power Added Efficiency and
Input Power versus Output Power and Temperature
P
out
, OUTPUT POWER (WATTS)
G
ps
, P OWER GAIN (dB)
15
18
17
120
G
ps
25
30
10
15
21
20
19
20
50
60
10
P
in
16
P
in
, INPUT
POWER (WATTS)
22
14
12
40
30
20
PAE, POWER ADDED
EFFICIENCY (%)
PAE
13
10
T
C
=25_C
85_C
125_C
25_C
125_C
85_C
25_C
125_C
85_C
0.5
V
DD
=28Vdc,I
DQ
=110mA
f = 2450 MHz
MHT1008N
11
RF Device Data
Freescale Semiconductor, Inc.
Figure 12. PCB Pad Layout for PLD--1.5W
(7.11)
0.28
(4.91)
0.165
(3.94)
0.155
(2.26)
0.089
(2.16)
0.085
Solder pad with
thermal via structure.
(mm)
Inches
Figure 13. Product Marking
MT008
N( )A
WLYWWZ
12
RF Device Data
Freescale Semiconductor, Inc.
MHT1008N
PACKAGE DIMENSIONS
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MHT1008NT1

Mfr. #:
Buy MHT1008NT1
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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