MAX6880–MAX6883
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
10 ______________________________________________________________________________________
Pin Description (continued)
PIN
MAX6880
MAX6881 MAX6882 MAX6883
NAME
FUNCTION
14 10
PG/RST
Power-Good Output, Open-Drain. PG_RST asserts high t
TIMEOUT
after all OUT_ voltages exceed the V
TH_PG
thresholds.
16 9 OUT3
Channel 3 Monitored Output Voltage. Connect OUT3 to the source
of an n-channel FET. A fault condition activates a 100 pulldown to
ground.
17 10
GATE3
Gate Drive for External n-Channel FET. An internal charge pump
boosts GATE3 to V
IN3
+ 5V to fully enhance the external n-channel
FET when power-up is complete.
18 11 11 11 OUT2
Channel 2 Monitored Output Voltage. Connect OUT2 to the source
of an n-channel FET. A fault condition activates a 100 pulldown to
ground.
19 12 12 12
GATE2
Gate Drive for External n-Channel FET. An internal charge pump
boosts GATE2 to V
IN2
+ 5V to fully enhance the external n-channel
FET when power-up is complete.
20 13 13 13 OUT1
Channel 1 Monitored Output Voltage. Connect OUT1 to the source
of an n-channel FET. A fault condition activates a 100 pulldown to
ground.
21 14 14 14
GATE1
Gate Drive for External n-Channel FET. An internal charge pump
boosts GATE1 to V
IN1
+ 5V to fully enhance the external n-channel
FET when power-up is complete.
22 15 IN3
23 16 15 15 IN2
24 1 16 16 IN1
Supply Input Voltage. IN1, IN2, or IN3 must be greater than the
internal undervoltage lockout (V
ABP
= 2.7V) to enable the
sequencing functionality. Each IN_ input is simultaneously
monitored by SET_ inputs to ensure all supplies have stabilized
before power-up is enabled. If IN_ is connected to ground or left
unconnected and SET_ is above 0.5V, then no sequencing control
is performed on that channel. Each IN_ is internally pulled down by
a 100k resistor.
EP EP EP EP EP Exposed Paddle. Connect exposed paddle to ground.
MAX6880–MAX6883
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
______________________________________________________________________________________ 11
CONTROL
LOGIC
INTERNAL
V
CC
/UVLO
SEQUENCING
MONITOR
PG CIRCUIT
CHARGE
PUMP
GATE
CONTROLLER
OUT1
OUT2
OUT3
IN1
IN2
IN3
V
REF
IN1
IN1
IN2 IN3
ABP
GATE1
OUT1
GATE2
OUT2
GATE3
OUT3
PG/RST
DELAY
SLEW
MARGIN
VBUS
EN/UV
SET3
SET2
IN2
SET1
GND
C
SLEW
TIMEOUT
C
TIMEOUT
TO LOAD
IN1
MAX6880
IN3
COMP
COMP
COMP
COMP
IN3 TO OUT3
CONTROL BLOCK
IN2 TO OUT2
CONTROL BLOCK
RAMP
GENERATOR
Functional Diagram
MAX6880–MAX6883
Detailed Description
The MAX6880–MAX6883 multivoltage power
sequencers/supervisors monitor three (MAX6880/
MAX6881) and two (MAX6882/MAX6883) system volt-
ages and provide proper power-up and power-down
control for systems requiring voltage sequencing. These
devices ensure the controlled voltages sequence in the
proper order as system power supplies are enabled.
The MAX6880–MAX6883 generate all required voltages
and timing to control up to three external n-channel
pass FETs for the OUT1/OUT2/OUT3 supply voltages.
The MAX6880–MAX6883 feature adjustable undervolt-
age thresholds for each input supply. When all of the
voltages are above the adjusted thresholds these
devices turn on the external n-channel MOSFETs to
sequence the voltages to the system. The outputs are
turned on one after the other, OUT1 first and OUT3 last.
The MAX6880–MAX6883 feature internal charge pumps
to fully enhance the external FETs for low-voltage drops
at highpass currents. The MAX6880/MAX6882 also fea-
ture a power-good output (PG/RST) with a selectable
timeout period that can be used for system reset.
The MAX6880–MAX6883 monitor up to three voltages.
Devices may be configured to exclude any IN_. To dis-
able sequencing operation of any IN_, connect the IN_
to ground (or leave unconnected) and connect SET_ to
a voltage greater than 0.5V. The channel exclusion fea-
ture adds more flexibility to the device in a variety of
different applications. As an example, the MAX6880
can sequence two voltages using IN1 and IN2 while
IN3 is left disabled.
Powering the MAX6880–MAX6883
These devices derive power from either IN1, IN2, or IN3
voltage inputs (see the Functional Diagram). In order to
ensure proper operation, at least one of the IN_ inputs
must be at least +2.7V.
The highest input voltage on IN1/IN2/IN3 supplies
power to the devices. Internal hysteresis ensures that
the supply input that initially powers these devices con-
tinues to power the MAX6880–MAX6883 when multiple
input voltages are within 100mV (typ) of each other.
Sequencing
The sequencing operation can be initiated after all
input conditions for power-up are met V
EN/UV
> 1.25V
and all SET_ inputs are above the internal SET_ thresh-
old (0.5V). In sequencing mode, the outputs are turned
on sequentially, OUT1 first and OUT3 last. Before turn-
ing on each channel, a delay period is waited (pro-
grammable by connecting a capacitor from DELAY to
ground. The power-up phase for each channel ends
when its output voltage exceeds a fixed percentage
(V
TH_PG
) of the corresponding IN_ voltage. When all
channels have exceeded these thresholds, PG/RST
asserts high after t
TIMEOUT
, indicating a successful
sequence.
If there is a fault condition during the initial power-up
sequence, the process is aborted.
When powering down, all outputs turn off simultaneous-
ly, tracking each other. No reverse power-down
sequencing occurs.
The power-supply sequencing operation should be
completed within the selected fault timeout period
(t
FAULT
) (see Figure 5). The total sequencing time is
extended when the devices must vary the control slew
rate to allow slow supplies to catch up. If the external
FET is too small (R
DS
is too high for the selected load
current and IN_ source current), the OUT_ voltage may
never reach the control ramp voltage. For a slew rate of
935V/s, a fault is signaled if all outputs have not stabi-
lized within 22ms. For a slew rate of 93.5V/s, a fault is
signaled if sequencing takes too long (more than
219ms).
The fault time period (t
FAULT
) is set through the capaci-
tor at SLEW (C
SLEW
). Use the following formula to esti-
mate the fault timeout period:
t
FAULT
= 2.191 x 10
8
x C
SLEW
Autoretry Function
The MAX6880/MAX6881/MAX6882 feature autoretry
modes to power-on again after a fault condition has been
detected (see the Typical Operating Characteristics).
When a fault is detected, for a period of t
RETRY
, GATE_
remains off and the 100 pulldowns are turned on.
After the t
RETRY
period, the device waits t
DELAY
and
retry sequencing if all power-up conditions are met
(see Figure 5). These include all V
SET_
> 0.5V, EN/UV >
V
EN_R
, and OUT_ voltages < V
TH_PL
. The autoretry
period t
RETRY
is a function of C
SLEW
(see Table 1).
Power-Up and Power-Down
During power-up, OUT_ is forced to follow the internal
reference ramp voltage by an internal loop that controls
the GATE_ of the external MOSFET. This phase must
be completed within the adjustable fault timeout period
(t
FAULT
); otherwise, the part forces a shutdown on all
GATE_.
Once the power-up is completed, a power-down phase
can be initiated by forcing V
EN/UV
below V
EN_F
. The
reference voltage ramp ramps down at the capacitor-
adjusted slew rate. The control-loop comparators moni-
tor each OUT_ voltage with respect to the common
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
12 ______________________________________________________________________________________

MAX6880ETG+T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Supervisory Circuits Triple Power-Sup Sequencer
Lifecycle:
New from this manufacturer.
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