reference ramp voltage. During ramp down, if an OUT_
voltage is greater than the reference ramp voltage by
more than V
TRK
, the control loop dynamically stops the
control ramp voltage from decreasing until the slow
OUT_ voltage catches up. If an OUT_ voltage is greater
or less than the reference ramp voltage by more than
V
TRK_F
, a fault is signaled and the fast-shutdown mode
is initiated. In fast-shutdown mode, a 100 pulldown
resistor is connected from OUT_ to GND to quickly dis-
charge capacitance at OUT_, and GATE_ is pulled low
with a strong I
GDS
current (see Figure 3).
Figure 4 shows the aborted sequencing mode. When
EN/UV goes low before t
TIMEOUT
expires, all the out-
puts go low, and the device goes into fast shutdown.
Internal Pulldown
To ensure that the OUT_ voltages are not held high by
a large output capacitance after a fault has occurred,
there is a 100 internal pulldown at OUT_. The pull-
down ensures that all OUT_ voltages are below V
TH_PL
(referenced to GND) before power-up cycling is initiat-
ed. The internal pulldown also ensures a fast discharge
of the output capacitor during fast shutdown and fault
modes. The pulldowns are not present during normal
operation.
Stability Comment
No external compensation is required for sequencing
or slew-rate control.
Inputs
IN1/IN2/IN3
The highest voltage on IN1, IN2, or IN3 supplies power
to the device. The undervoltage threshold for each IN_
supply is set with an external resistor-divider from each
IN_ to SET_ to ground. To disable sequencing on any
IN_, connect IN_ to ground (or leave unconnected) and
connect SET_ to a voltage greater than 0.5V.
Undervoltage Lockout Threshold Inputs (SET_)
The MAX6880/MAX6881 feature three and the MAX6882/
MAX6883 feature two externally adjustable IN_ under-
voltage lockout thresholds (SET1/SET2/SET3). The 0.5V
SET_ threshold enables monitoring IN_ voltages as low
as 0.5V. The undervoltage threshold for each IN_ sup-
ply is set with an external resistor-divider from each IN_
to SET_ to ground (see Figure 6). All SET_ inputs must
be above the internal SET_ threshold (0.5V) to enable
sequencing functionality. Use the following formula to
set the UVLO threshold:
V
IN_
= V
TH
(R1 + R2) / R2
where V
IN_
is the undervoltage lockout threshold and
V
TH
is the 500mV SET threshold.
Margin Input (
MMAARRGGIINN
) (MAX6880/MAX6882)
MARGIN allows system-level testing while power sup-
plies are below the normal ranges as adjusted by the
SET_ inputs. Drive MARGIN low before varying system
voltages below the adjusted thresholds to avoid signal-
ing an error. The state of PG/RST does not change
while MARGIN is low. PG/RST and all monitoring func-
tions are disabled while MARGIN is low. MARGIN
makes it possible to vary the supplies without a need to
adjust the thresholds to prevent sequencer alerts. Drive
MARGIN high or leave it unconnected for normal oper-
ating mode.
Slew-Rate Control Input (SLEW)
The reference ramp voltage slew rate during any con-
trolled power-up/down phase can be programmed in
the 90V/s to 950V/s range by connecting a capacitor
(C
SLEW
) from SLEW to ground. Use the following for-
mula to calculate the typical slew rate:
Slew Rate = (9.35 x 10
-8
)/ C
SLEW
where slew rate is in V/s and C
SLEW
is in farads.
The capacitor at C
SLEW
also sets the retry timeout peri-
od (t
RETRY
), see Table 1.
For example, if C
SLEW
= 100pF, we have t
RETRY
=
350ms, t
FAULT
= 21.91ms, slew rate = 935V/s. For
example, if C
SLEW
= 1nF, we have t
RETRY
= 3.5s, slew
rate = 93.5V/s.
C
SLEW
is the capacitor on SLEW pad, and must be
large enough so the parasitic PC board capacitance is
negligible. C
SLEW
should be in the range of 100pF <
C
SLEW
< 1nF.
MAX6880–MAX6883
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
______________________________________________________________________________________ 13
IN_
R1
R2
V
IN_
SET_
MAX6880–
MAX6883
Figure 6. Setting the Undervoltage (UVLO) Thresholds
MAX6880–MAX6883
Limiting Inrush Current
The capacitor (C
SLEW
) at SLEW to ground, controls the
OUT_ slew rate, thus controlling the inrush current
required to charge the load capacitor at OUT_. Using
the programmed slew rate, limit the inrush current by
using the following formula:
I
INRUSH
= C
OUT
x SR
where I
INRUSH
is in amperes, C
OUT
is in farads, and SR
is in V/s.
Delay Time Input (DELAY)
To adjust the desired delay period (t
DELAY
) before
sequencing is enabled, connect a capacitor (C
DELAY
)
between DELAY to ground (see Figures 2 to 5). The
selected delay time is also enforced when EN/UV rises
from low to high when all the input voltages are present.
Use the following formula to calculate the delay time:
t
DELAY
= 200µs + (500k x C
DELAY
)
where t
DELAY
is in µs and C
DELAY
is in farads. Leave
DELAY unconnected for the default 200µs delay.
Timeout Period Input (TIMEOUT)
(MAX6880/MAX6882)
These devices feature a PG/RST timeout period.
Connect a capacitor (C
TIMEOUT
) from TIMEOUT to
ground to program the PG/RST timeout period. After all
OUT_ outputs exceed their IN_ referenced thresholds
(V
TH_PG
), PG/RST remains low for the selected timeout
period t
TIMEOUT
(see Figure 3).
t
TIMEOUT
= 200µs + (500k x C
TIMEOUT
)
where t
TIMEOUT
is in µs and C
TIMEOUT
is in farads.
Leave TIMEOUT unconnected for the default 200µs
timeout delay.
Logic-Enable Input (EN/
UUVV
)
Drive logic EN/UV input above V
EN_R
to initiate voltage
sequencing during power-up operation. Drive logic
EN/UV below V
EN_F
to initiate tracking power-down
operation. Connect EN/UV to an external resistor-
divider network to set the external undervoltage lockout
threshold.
ABP Input (MAX6880/MAX6882)
ABP powers the analog circuitry. Bypass ABP to GND
with a 1µF ceramic capacitor installed as close to the
device as possible. ABP takes the highest voltage of
IN_. Do not use ABP to provide power to external cir-
cuitry. ABP maintains the device supply voltage during
rapid power-down conditions.
OUT1/OUT2/OUT3
The MAX6880/MAX6881 monitor three OUT_ and the
MAX6882/MAX6883 monitor two OUT_ outputs to con-
trol the sequencing performance. After the internal sup-
ply (ABP) exceeds the minimum voltage (2.7V)
requirements, EN/UV > V
EN_R
, and IN1/IN2/IN3 are all
greater than their adjusted SET_ thresholds, OUT1/
OUT2/OUT3 begin to sequence.
During fault conditions, an internal pulldown resistor
(100) on OUT_ is enabled to help discharge load
capacitance (100 is connected for fast power-down
control).
Outputs
GATE_
The MAX6880–MAX6883 feature up to three GATE_ out-
puts to drive up to three external n-channel FET gates.
The following conditions must be met before GATE_
begins enhancing the external n-channel FET_:
1) All SET_ inputs (SET1/SET2/SET3) are above their
0.5V thresholds.
2) At least one IN_ input is above the minimum operat-
ing voltage (2.7V).
3) EN/UV > 1.25V.
At power-up mode, GATE_ voltages are enhanced by
control loops so all OUT_ voltages sequence at a
capacitor-adjusted slew rate. Each GATE_ is internally
pulled up to 5V above its relative IN_ voltage to fully
enhance the external n-channel FET when power-up is
complete.
Power-Good Output (PG/RST) (MAX6880/MAX6882)
The MAX6880/MAX6882 include a power-good (PG/RST)
output. PG/RST is an open-drain output and requires an
external pullup resistor.
All the OUT_ outputs must exceed their IN_ referenced
thresholds (IN_ x V
TH_PG
) for the selected reset timeout
period t
TIMEOUT
(see the TIMEOUT Period Input sec-
tion) before PG/RST asserts high. PG/RST stays low for
the selected reset timeout period (t
TIMEOUT
) after all
the OUT_ voltages exceed their IN_ referenced thresh-
olds. PG/RST goes low when V
SET_
< V
TH
or V
EN/UV
<
V
EN_R
(see Figure 2).
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
14 ______________________________________________________________________________________
Table 1. C
SLEW
Timing Formulas
TIME PERIOD FORMULAS
Slew Rate (9.35 x 10
-8
) / C
SLEW
t
RETRY
3.506 x 10
9
x C
SLEW
t
FAULT
2.191 x 10
8
x C
SLEW
Applications Information
MOSFET Selection
The external pass MOSFET is connected in series with
the sequenced power-supply source. Since the load
current and the MOSFET drain-to-source impedance
(R
DS
) determine the voltage drop, the on characteris-
tics of the MOSFET affect the load supply accuracy.
The MAX6880–MAX6883 fully enhance the external
MOSFET out of its linear range to ensure the lowest
drain-to-source on-impedance. For highest supply
accuracy/lowest voltage drop, select a MOSFET with
an appropriate drain-to-source on-impedance with a
gate-to-source bias of 4.5V to 6.0V.
Layout and Bypassing
For better noise immunity, bypass each of the IN_
inputs to GND with 0.1µF capacitors installed as close
to the device as possible. Bypass ABP to GND with a
1µF capacitor installed as close to the device as possi-
ble. ABP is an internally generated voltage and must
not be used to supply power to external circuitry.
MAX6880–MAX6883
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
______________________________________________________________________________________ 15
Selector Guide
PART CHANNEL
TIMEOUT
SELECTABLE
PG/RST MARGIN
PG THRESHOLD
VOLTAGE (%)
MAX6880 3 Yes Yes Yes 92.5
MAX6881 3 No No No
MAX6882 2 Yes Yes Yes 92.5
MAX6883 2 No No No
Chip Information
PROCESS: BiCMOS

MAX6880ETG+T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Supervisory Circuits Triple Power-Sup Sequencer
Lifecycle:
New from this manufacturer.
Delivery:
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