CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Document Number: 001-08090 Rev. *I Page 7 of 25
Table 3. Interrupt Operation Example (Assumes BUSY#L
= BUSY#R = HIGH)
Function
Left Port Right Port
WE#L CS#L OE#L AddressL INT#L WE#R CS#R OE#R AddressR INT#R
Set Right INT#R Flag L L X 0x3FFF
[7]
XXXX X L
Reset Right INT#R Flag X X X X X X L L 0x3FFF
[7]
H
Set Left INT#L Flag X X X X L L L X 0x3FFE
[8]
X
Reset Left INT#L Flag X L L 0x3FFE
[8]
HXXX X X
Table 4. Arbitration Winning Port
CS#L CS#R
Address Match
Left/Right Port
BUSY#L BUSY#R Function
X X No Match H H Normal
HX Match HH Normal
XH Match HH Normal
L L Match See Note
[9]
See Note
[9]
Write Inhibit
[10]
Table 5. Input Read Register Operation
[11]
SFEN# CS# WE# OE# UB# LB# ADDR IO
0
IO
1
IO
2
IO
15
Mode
HLHLLLx0000-MaxVALID
[12]
VALID
[12]
Standard Memory Access
L L H L X L x0000 VALID
[13]
X IRR Read
Table 6. Output Drive Register
[15]
SFEN# CS# WE# OE# UB# LB# ADDR IO
0
IO
4
IO
5
IO
15
Mode
HLHX
[16]
L
[12]
L
[12]
x0000-Max VALID
[12]
VALID
[12]
Standard Memory Access
LLLXXLx0001VALID
[13]
X ODR Write
[17]
LLHLXLx0001VALID
[13]
X ODR Read
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Document Number: 001-08090 Rev. *I Page 8 of 25
Maximum Ratings
Exceeding maximum ratings
[18]
may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature................................ –65 °C to +150 °C
Ambient Temperature with
Power Applied .......................................... –55 °C to +125 °C
Supply Voltage to Ground Potential..............–0.5 V to +3.3 V
DC Voltage Applied to
Outputs in High Z State ....................... –0.5 V to V
CC
+ 0.5 V
DC Input Voltage
[19]
.............................–0.5 V to V
CC
+ 0.5 V
Output Current into Outputs (LOW)............................. 90 mA
Static Discharge Voltage......................................... > 2000 V
Latch up Current.................................................... > 200 mA
Operating Range
Range Ambient Temperature V
CC
Industrial –40 °C to +85 °C 1.8 V ± 100 mV
2.5 V ± 100 mV
3.0 V ± 300 mV
Electrical Characteristics for V
CC
= 1.8 V
Over the Operating Range
Parameter
Description
CYDMX256A16
CYDMX128A16
CYDMX256B16
CYDMX128B16
CYDMX064B16
CYDMX256A16
CYDMX128A16
CYDMX064A16
Unit
–65 –65 –90
P1 IO
Voltage
P2 IO
Voltage
Min Typ Max Min Typ Max Min Typ Max
V
OH
Output HIGH voltage
(I
OH
= –100 A)
1.8 V (any port) V
DDIO
– 0.2
––V
DDIO
– 0.2
––V
DDIO
– 0.2
––V
Output HIGH voltage (I
OH
= –2 mA) 2.5 V (any port) 2.0 2.0 2.0 V
Output HIGH voltage (I
OH
= –2 mA) 3.0 V (any port) 2.1 2.1 2.1 V
V
OL
Output LOW voltage (I
OL
= 100 A 1.8 V (any port) 0.2 0.2 0.2 V
Output HIGH voltage (I
OH
= 2 mA) 2.5 V (any port) 0.4 0.4 0.4 V
Output HIGH voltage (I
OH
= 2 mA) 3.0 V (any port) 0.4 0.4 0.4 V
V
OL
ODR
ODR output LOW voltage
(I
OL
= 8 mA
1.8 V (any port) 0.2 0.2 0.2 V
2.5 V (any port) 0.2 0.2 0.2 V
3.0 V (any port) 0.2 0.2 0.2 V
V
IH
Input HIGH voltage 1.8 V (any port) 1.2 V
DDIO
+ 0.2
1.2 V
DDIO
+ 0.2
1.2 V
DDIO
+ 0.2
V
2.5 V (any port) 1.7 V
DDIO
+ 0.3
1.7 V
DDIO
+ 0.3
1.7 V
DDIO
+ 0.3
V
3.0 V (any port) 2.0 V
DDIO
+ 0.2
2.0 V
DDIO
+ 0.2
2.0 V
DDIO
+ 0.2
V
V
IL
Input LOW voltage 1.8 V (any port) –0.2 0.4 –0.2 0.4 –0.2 0.4 V
2.5 V (any port) –0.3 0.6 –0.3 0.6 –0.3 0.6 V
3.0 V (any port) –0.2 0.7 –0.2 0.7 –0.2 0.7 V
I
OZ
Output leakage current 1.8 V 1.8 V –1 1 1 1 –1 1 A
2.5 V 2.5 V –1 1 1 1 –1 1 A
3.0 V 3.0 V –1 1 1 1 –1 1 A
I
CEX
ODR
ODR output leakage current. V
OUT
= V
DDIO
1.8 V 1.8 V –1 1 1 1 –1 1 A
2.5 V 2.5 V –1 1 1 1 –1 1 A
3.0 V 3.0 V –1 1 1 1 –1 1 A
Notes
18. The voltage on any input or IO pin cannot exceed the power pin during power-up.
19. Pulse width < 20 ns.
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Document Number: 001-08090 Rev. *I Page 9 of 25
I
IX
Input leakage current 1.8 V 1.8 V –1 1 1 1 –1 1 A
2.5 V 2.5 V –1 1 1 1 –1 1 A
3.0 V 3.0 V –1 1 1 1 –1 1 A
I
CC
Operating current
(V
CC
= Max, I
OUT
= 0 mA)
outputs disabled
Ind. 1.8 V 1.8 V 25 40 25 40 15 25 mA
I
SB1
Standby current
(both ports TTL level)
CE#L and CE#R V
CC
– 0.2,
f = f
MAX
Ind. 1.8 V 1.8 V 2 6 2 6 2 6 A
I
SB2
Standby current
(One Port TTL level)
CE#L or CE#R V
IH
, f = f
MAX
Ind. 1.8 V 1.8 V 8.5 18 8.5 18 8.5 14 mA
I
SB3
Standby current
(both ports CMOS level) CE#L
and CE#R V
CC
 0.2 V, f = 0
Ind. 1.8 V 1.8 V 2 6 2 6 2 6 A
I
SB4
Standby current
(one port CMOS level)
CE#L or CE#R V
IH
,
f = f
MAX
[20]
Ind. 1.8 V 1.8 V 8.5 18 8.5 18 8.5 14 mA
Electrical Characteristics for V
CC
= 1.8 V (continued)
Over the Operating Range (continued)
Parameter
Description
CYDMX256A16
CYDMX128A16
CYDMX256B16
CYDMX128B16
CYDMX064B16
CYDMX256A16
CYDMX128A16
CYDMX064A16
Unit
–65 –65 –90
P1 IO
Voltage
P2 IO
Voltage
Min Typ Max Min Typ Max Min Typ Max
Note
20. f
MAX
= 1/t
RC
= All inputs cycling at f = 1/t
RC
(except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby
I
SB3
.

CYDMX128A16-65BVXIT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM MoBLADM DP,x16,128Kb 65 or 90ns access
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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