LTC4257-1
10
42571fb
Undervoltage Lockout
The IEEE specification dictates a maximum turn-on volt-
age of 42V and a minimum turn-off voltage of 30V for the
PD. In addition, the PD must maintain large on-off hyster-
esis to prevent resistive losses in the wiring between the
PSE and the PD from causing start-up oscillation. The
LTC4257-1 incorporates an undervoltage lockout (UVLO)
circuit that monitors line voltage to determine when to
apply power to the PD load (Figure 6). Before power is
applied to the load, the V
OUT
pin is high impedance and
sitting at ground potential since there is no charge on
capacitor C1. When the input voltage rises above the UVLO
turn-on threshold, the LTC4257-1 removes the classifica-
tion load current and turns on the internal power MOSFET.
C1 charges up under LTC4257-1 current limit control and
the V
OUT
pin transitions from 0V to V
IN
. This sequence is
shown in Figure 1. The LTC4257-1 includes a hysteretic
UVLO circuit that keeps power applied to the load until the
input voltage falls below the UVLO turn-off threshold.
Once the input voltage drops below –30V, the internal
power MOSFET is turned off and the classification load
current is re-enabled. C1 will discharge through the PD
circuitry and the V
OUT
pin will go to a high impedance state.
Input Current Limit
IEEE 802.3af specifies a maximum inrush current and also
specifies a minimum load capacitor between the GND and
V
OUT
pins. To control turn-on surge current in the system,
the LTC4257-1 integrates a dual level current limit circuit
with an onboard power MOSFET and sense resistor to
provide a complete inrush control circuit without additional
external components. At turn on, the LTC4257-1 will limit
input current to the low level, allowing the load capacitor
to ramp up to the line voltage in a controlled manner.
The LTC4257-1 has been specifically designed to interface
with legacy PSEs which do not meet the inrush current
requirement of the IEEE 802.3af specification. This is
APPLICATIO S I FOR ATIO
WUUU
GND
C1
5µF
MIN
V
IN
8
4
V
OUT
5
LTC4257-1
42571 F06
TO
PSE
UNDERVOLTAGE
LOCKOUT
CIRCUIT
PD
LOAD
CURRENT-LIMITED
TURN ON
+
INPUT LTC4257-1
VOLTAGE POWER MOSFET
0V TO UVLO* OFF
>UVLO* ON
*UVLO INCLUDES HYSTERESIS
RISING INPUT THRESHOLD –36V
FALLING INPUT THRESHOLD –30.5V
Figure 6. LTC4257-1 Undervoltage Lockout
LTC4257-1
11
42571fb
accomplished by a dual level current limit. At turn on
before C1 is charged, the LTC4257-1 current limit is set to
the low level. After C1 is charged up and the V
OUT
– V
IN
voltage difference is below the power good threshold, the
LTC4257-1 switches to the high level current limit. The
dual level current limit allows legacy PSEs with limited
current sourcing capability to power up the PD while also
allowing the PD to draw full power from an IEEE 802.3af
PSE.
The dual level current limit also allows use of arbitrarily
large load capacitors. The IEEE 802.3af specification man-
dates that at turn on the PD not exceed the inrush current
limit for more than 50ms. The LTC4257-1 is not restricted
by the 50ms time limit because the load capacitor is
charged with a current below the IEEE inrush current limit
specification. Therefore, it is possible to use larger load
capacitors with the LTC4257-1.
As the LTC4257-1 switches from the low to the high level
current limit, a momenatry increase in current can be
observed. This current spike is a result of the LTC4257-1
charging the last 1.5V at the high level current limit. When
charging a 10µF capacitor, the current spike is typically
100µs wide and 125% of the nominal low level current
limit.
The LTC4257-1 stays in the high level current limit mode
until the input voltage drops below the UVLO turn-off
threshold. This dual level current limit provides the sys-
tem designer with the flexibility to design PDs which are
compatible with legacy PSEs while also being able to take
advantage of the higher power allocation available in an
IEEE 802.3af system.
During the current limited turn on, a large amount of power
is dissipated in the power MOSFET. The LTC4257-1 is
designed to accept this thermal load and is thermally
protected to avoid damage to the onboard power MOSFET.
Note that in order to adhere to the IEEE 802.3af standard,
it is necessary for the PD designer to ensure the PD steady-
state power consumption falls within the limits shown in
Table 2.
Power Good
The LTC4257-1 includes a power good circuit (Figure 7)
that is used to indicate to the PD circuitry that load
capacitor C1 is fully charged and that the PD can start
DC/DC converter operation. The power good circuit moni-
tors the voltage across the internal power MOSFET and
PWRGD is asserted when the voltage drops below 1.5V.
The power good circuit includes a large amount of hyster-
esis to allow the LTC4257-1 to operate near the current
limit point without inadvertently disabling PWRGD. The
MOSFET voltage must increase to 3V before PWRGD is
disabled.
APPLICATIO S I FOR ATIO
WUUU
Figure 7. LTC4257-1 Power Good
PWRGD
C1
5µF
MIN
V
IN
6
4
V
OUT
1.125V
300k
300k
R9
100k
5
LTC4257-1
THERMAL SHUTDOWN
UVLO
42571 F07
TO
PSE
PD
LOAD
SHDN
+
+
+
LTC4257-1
12
42571fb
If a sudden increase in voltage appears on the input line,
this voltage step will be transferred through capacitor C1
and appear across the power MOSFET. The response of
the LTC4257-1 will depend on the magnitude of the
voltage step, the rise time of the step, the value of capacitor
C1 and the DC load. For fast rising inputs, the LTC4257-1
will attempt to quickly charge capacitor C1 using an
internal secondary current limit circuit. In this scenario,
the PSE current limit should provide the overall limit for
the circuit. For slower rising inputs, the 375mA current
limit in the LTC4257-1 will set the charge rate of capacitor
C1. In either case, the PWRGD signal may go inactive
briefly while the capacitor is charged up to the new line
voltage. In the design of a PD, it is necessary to determine
if a step in the input voltage will cause the PWRGD signal
to go inactive and how to respond to this event. In some
designs, the charge on C1 is sufficient to power the PD
through this event. In this case, it may be desirable to filter
the PWRGD signal so that intermittent power bad condi-
tions are ignored. Figure 10 demonstrates methods to
insert a lowpass filter on the power good interface.
For PD designs that use a large load capacitor and also
consume a lot of power, it is important to delay activation
of the PD circuitry with the PWRGD signal. If the PD cir-
cuitry is not disabled during the current-limited turn-on se-
quence, the PD circuitry will rob current intended for charg-
ing up the load capacitor and create a slow rising input,
possibly causing the LTC4257-1 to go into thermal shut-
down.
The PWRGD pin connects to an internal open-drain, 100V
transistor capable of sinking 1mA. Low impedance indi-
cates power is good. PWRGD is high impedance during
signature and classification probing and in the event of a
thermal overload.
During turn-off, PWRGD is deactivated when the input
voltage drops below 30V. In addition, PWRGD may go
active briefly at turn-on for fast rising input waveforms.
PWRGD is referenced to the V
IN
pin and when active will
be near the V
IN
potential. The PD DC/DC converter will
typically be referenced to V
OUT
and care must be taken to
ensure that the difference in potential of the PWRGD signal
does not cause any detrimental effects. Use of diode clamp
D6, as shown in Figure 10, will alleviate any problems.
Thermal Protection
The LTC4257-1 includes thermal overload protection in
order to provide full device functionality in a miniature
package while maintaining safe operating temperatures.
Several factors create the possibility for tremendous
power dissi
pation within the LTC4257-1. At turn on,
before the load capacitor has charged up, the instanta-
neous power dissipated by the LTC4257-1 can be 10W. As
the load capacitor charges up, the power dissipation in the
LTC4257-1 will decrease until it reaches a steady-state
value dependent on the DC load current. The size of the
load capacitor determines how fast the power dissipation
in the LTC4257-1 will subside. At room temperature, the
LTC4257-1 can handle load capacitors as large as 800µF
without going into thermal shutdown. With a large load
capacitor like this, the LTC4257-1 die temperature will
increase by about 50°C during a single turn-on sequence.
If for some reason power were removed from the part and
then quickly reapplied so that the LTC4257-1 has to
charge up the load capacitor again, the temperature
rise would be excessive if safety precautions were not
implemented.
The LTC4257-1 protects itself from thermal damage by
monitoring the die temperature. If the die temperature
exceeds the overtemperature trip point, the current is
reduced to zero and very little power is dissipated in the
part until it cools below the overtemperature set point.
Once the LTC4257-1 has charged up the load capacitor
and the PD is powered and running, there will be some
residual heating due to the DC load current of the PD
flowing through the internal MOSFET. In some applica-
tions, the LTC4257-1 power dissipation may be signifi-
cant and if dissipated in the S8 package, excessive pack-
age heating could occur. This problem can be solved with
the use of the DD package which has superior thermal
performance. The DD package includes an exposed pad
which should be soldered to an isolated heatsink on the
printed circuit board.
During classification, excessive heating of the LTC4257-1
can occur if the PSE violates the 75ms probing time limit.
To protect the LTC4257-1, thermal protection circuitry will
disable classification current if the die temperature exceeds
APPLICATIO S I FOR ATIO
WUUU

LTC4257CDD-1#TRPBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Power Switch ICs - POE / LAN IEEE 802.3af PD Pwr over E Int Cntr w/ 2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union