74AUP1T57 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 15 August 2012 15 of 20
NXP Semiconductors
74AUP1T57
Low-power configurable gate with voltage-level translator
Fig 17. Package outline SOT1115 (XSON6)
References
Outline
version
European
projection
Issue date
IEC JEDEC JEITA
SOT1115
sot1115_po
10-04-02
10-04-07
Unit
mm
max
nom
min
0.35 0.04 0.95
0.90
0.85
1.05
1.00
0.95
0.55 0.3
0.40
0.35
0.32
A
(1)
Dimensions
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology.
XSON6: extremely thin small outline package; no leads;
6 terminals; body 0.9 x 1.0 x 0.35 mm
SOT1115
A
1
b
0.20
0.15
0.12
DEee
1
L
0.35
0.30
0.27
L
1
0 0.5 1 mm
scale
terminal 1
index area
D
E
(4×)
(2)
e
1
e
1
e
L
L
1
b
321
6 5 4
(6×)
(2)
A
1
A
74AUP1T57 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 15 August 2012 16 of 20
NXP Semiconductors
74AUP1T57
Low-power configurable gate with voltage-level translator
Fig 18. Package outline SOT1202 (XSON6)
References
Outline
version
European
projection
Issue date
IEC JEDEC JEITA
SOT1202
sot1202_po
10-04-02
10-04-06
Unit
mm
max
nom
min
0.35 0.04 1.05
1.00
0.95
1.05
1.00
0.95
0.55 0.35
0.40
0.35
0.32
A
(1)
Dimensions
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology.
XSON6: extremely thin small outline package; no leads;
6 terminals; body 1.0 x 1.0 x 0.35 mm
SOT1202
A
1
b
0.20
0.15
0.12
DEee
1
L
0.35
0.30
0.27
L
1
0 0.5 1 mm
scale
terminal 1
index area
D
E
(4×)
(2)
e
1
e
1
e
L
b
123
L
1
6 5 4
(6×)
(2)
A
A
1
74AUP1T57 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 15 August 2012 17 of 20
NXP Semiconductors
74AUP1T57
Low-power configurable gate with voltage-level translator
14. Abbreviations
15. Revision history
Table 12. Abbreviations
Acronym Description
CDM Charged Device Model
CMOS Complementary Metal Oxide Semiconductor
DUT Device Under Test
ESD ElectroStatic Discharge
HBM Human Body Model
MM Machine Model
Table 13. Revision history
Document ID Release date Data sheet status Change notice Supersedes
74AUP1T57 v.5 20120815 Product data sheet - 74AUP1T57 v.4
Modifications:
Package outline drawing of SOT886 (Figure 15) modified.
74AUP1T57 v.4 20111201 Product data sheet - 74AUP1T57 v.3
74AUP1T57 v.3 20100721 Product data sheet - 74AUP1T57 v.2
74AUP1T57 v.2 20090803 Product data sheet - 74AUP1T57 v.1
74AUP1T57 v.1 20080103 Product data sheet - -

74AUP1T57GF,132

Mfr. #:
Manufacturer:
Nexperia
Description:
Translation - Voltage Levels 3V 1G LPOW CONF
Lifecycle:
New from this manufacturer.
Delivery:
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