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74AUP1T57GF,132

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
74AUP1T57 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 15 August 2012 6 of 20
NXP Semiconductors
74AUP1T57
Low-power configurable gate with voltage-level translator
10. Static characteristics
Table 8. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
T
amb
= 25 C
V
T+
positive-going threshold
voltage
V
CC
= 2.3 V to 2.7 V 0.60 - 1.10 V
V
CC
= 3.0 V to 3.6 V 0.75 - 1.16 V
V
T
negative-going threshold
voltage
V
CC
= 2.3 V to 2.7 V 0.35 - 0.60 V
V
CC
= 3.0 V to 3.6 V 0.50 - 0.85 V
V
H
hysteresis voltage (V
H
= V
T+
V
T
)
V
CC
= 2.3 V to 2.7 V 0.23 - 0.60 V
V
CC
= 3.0 V to 3.6 V 0.25 - 0.56 V
V
OH
HIGH-level output voltage V
I
= V
T+
or V
T
I
O
= 20 A; V
CC
= 2.3 V to 3.6 V V
CC
0.1 - - V
I
O
= 2.3 mA; V
CC
= 2.3 V 2.05 - - V
I
O
= 3.1 mA; V
CC
= 2.3 V 1.9 - - V
I
O
= 2.7 mA; V
CC
= 3.0 V 2.72 - - V
I
O
= 4.0 mA; V
CC
= 3.0 V 2.6 - - V
V
OL
LOW-level output voltage V
I
= V
T+
or V
T
I
O
= 20 A; V
CC
= 2.3 V to 3.6 V - - 0.10 V
I
O
= 2.3 mA; V
CC
= 2.3 V - - 0.31 V
I
O
= 3.1 mA; V
CC
= 2.3 V - - 0.44 V
I
O
= 2.7 mA; V
CC
= 3.0 V - - 0.31 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.44 V
I
I
input leakage current V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V - - 0.1 A
I
OFF
power-off leakage current V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V - - 0.1 A
I
OFF
additional power-off
leakage current
V
I
or V
O
= 0 V to 3.6 V;
V
CC
=0Vto0.2V
--0.2 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 2.3 V to 3.6 V
--1.2A
I
CC
additional supply current V
CC
= 2.3 V to 2.7 V; I
O
= 0 A
[1]
---A
V
CC
= 3.0 V to 3.6 V; I
O
= 0 A
[2]
---A
C
I
input capacitance V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
-0.8-pF
C
O
output capacitance V
O
= GND; V
CC
= 0 V - 1.7 - pF
T
amb
= 40 C to +85 C
V
T+
positive-going threshold
voltage
V
CC
= 2.3 V to 2.7 V 0.60 - 1.10 V
V
CC
= 3.0 V to 3.6 V 0.75 - 1.19 V
V
T
negative-going threshold
voltage
V
CC
= 2.3 V to 2.7 V 0.35 - 0.60 V
V
CC
= 3.0 V to 3.6 V 0.50 - 0.85 V
V
H
hysteresis voltage (V
H
= V
T+
V
T
)
V
CC
= 2.3 V to 2.7 V 0.10 - 0.60 V
V
CC
= 3.0 V to 3.6 V 0.15 - 0.56 V
74AUP1T57 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 15 August 2012 7 of 20
NXP Semiconductors
74AUP1T57
Low-power configurable gate with voltage-level translator
V
OH
HIGH-level output voltage V
I
= V
T+
or V
T
I
O
= 20 A; V
CC
= 2.3 V to 3.6 V V
CC
0.1 - - V
I
O
= 2.3 mA; V
CC
= 2.3 V 1.97 - - V
I
O
= 3.1 mA; V
CC
= 2.3 V 1.85 - - V
I
O
= 2.7 mA; V
CC
= 3.0 V 2.67 - - V
I
O
= 4.0 mA; V
CC
= 3.0 V 2.55 - - V
V
OL
LOW-level output voltage V
I
= V
T+
or V
T
I
O
= 20 A; V
CC
= 2.3 V to 3.6 V - - 0.1 V
I
O
= 2.3 mA; V
CC
= 2.3 V - - 0.33 V
I
O
= 3.1 mA; V
CC
= 2.3 V - - 0.45 V
I
O
= 2.7 mA; V
CC
= 3.0 V - - 0.33 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.45 V
I
I
input leakage current V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V - - 0.5 A
I
OFF
power-off leakage current V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V - - 0.5 A
I
OFF
additional power-off
leakage current
V
I
or V
O
= 0 V to 3.6 V;
V
CC
=0Vto0.2V
--0.5 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 2.3 V to 3.6 V
--1.5A
I
CC
additional supply current V
CC
= 2.3 V to 2.7 V; I
O
= 0 A
[1]
--4A
V
CC
= 3.0 V to 3.6 V; I
O
= 0 A
[2]
--12A
T
amb
= 40 C to +125 C
V
T+
positive-going threshold
voltage
V
CC
= 2.3 V to 2.7 V 0.60 - 1.10 V
V
CC
= 3.0 V to 3.6 V 0.75 - 1.19 V
V
T
negative-going threshold
voltage
V
CC
= 2.3 V to 2.7 V 0.33 - 0.64 V
V
CC
= 3.0 V to 3.6 V 0.46 - 0.85 V
V
H
hysteresis voltage (V
H
= V
T+
V
T
)
V
CC
= 2.3 V to 2.7 V 0.10 - 0.60 V
V
CC
= 3.0 V to 3.6 V 0.15 - 0.56 V
V
OH
HIGH-level output voltage V
I
= V
T+
or V
T
I
O
= 20 A; V
CC
= 2.3 V to 3.6 V V
CC
0.11 - - V
I
O
= 2.3 mA; V
CC
= 2.3 V 1.77 - - V
I
O
= 3.1 mA; V
CC
= 2.3 V 1.67 - - V
I
O
= 2.7 mA; V
CC
= 3.0 V 2.40 - - V
I
O
= 4.0 mA; V
CC
= 3.0 V 2.30 - - V
V
OL
LOW-level output voltage V
I
= V
T+
or V
T
I
O
= 20 A; V
CC
= 2.3 V to 3.6 V - - 0.11 V
I
O
= 2.3 mA; V
CC
= 2.3 V - - 0.36 V
I
O
= 3.1 mA; V
CC
= 2.3 V - - 0.50 V
I
O
= 2.7 mA; V
CC
= 3.0 V - - 0.36 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.50 V
I
I
input leakage current V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V - - 0.75 A
Table 8. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
74AUP1T57 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 15 August 2012 8 of 20
NXP Semiconductors
74AUP1T57
Low-power configurable gate with voltage-level translator
[1] One input at 0.3 V or 1.1 V, other input at V
CC
or GND.
[2] One input at 0.45 V or 1.2 V, other input at V
CC
or GND.
11. Dynamic characteristics
I
OFF
power-off leakage current V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V - - 0.75 A
I
OFF
additional power-off
leakage current
V
I
or V
O
= 0 V to 3.6 V;
V
CC
=0Vto0.2V
--0.75 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 2.3 V to 3.6 V
--3.5A
I
CC
additional supply current V
CC
= 2.3 V to 2.7 V; I
O
= 0 A
[1]
--7A
V
CC
= 3.0 V to 3.6 V; I
O
= 0 A
[2]
--22A
Table 8. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
(85 C)
Max
(125 C)
V
CC
= 2.3 V to 2.7 V; V
I
= 1.65 V to 1.95 V
t
pd
propagation delay A, B, C to Y; see Figure 12
[2]
C
L
= 5 pF 2.1 3.6 5.5 0.5 6.8 7.5 ns
C
L
= 10 pF 2.6 4.1 6.2 1.0 7.9 8.7 ns
C
L
= 15 pF 2.9 4.6 6.8 1.0 8.7 9.6 ns
C
L
= 30 pF 3.8 5.8 8.2 1.5 10.8 11.9 ns
V
CC
= 2.3 V to 2.7 V; V
I
= 2.3 V to 2.7 V
t
pd
propagation delay A, B, C to Y; see Figure 12
[2]
C
L
= 5 pF 1.7 3.4 5.4 0.5 6.0 6.6 ns
C
L
= 10 pF 2.1 4.0 6.2 1.0 7.1 7.9 ns
C
L
= 15 pF 2.5 4.5 6.7 1.0 7.9 8.7 ns
C
L
= 30 pF 3.3 5.6 8.2 1.5 10.0 11.0 ns
V
CC
= 2.3 V to 2.7 V; V
I
= 3.0 V to 3.6 V
t
pd
propagation delay A, B, C to Y; see Figure 12
[2]
C
L
= 5 pF 1.4 3.2 4.9 0.5 5.5 6.1 ns
C
L
= 10 pF 1.8 3.7 5.7 1.0 6.5 7.2 ns
C
L
= 15 pF 2.2 4.2 6.3 1.0 7.4 8.2 ns
C
L
= 30 pF 3.0 5.4 7.8 1.5 9.5 10.5 ns
V
CC
= 3.0 V to 3.6 V; V
I
= 1.65 V to 1.95 V
t
pd
propagation delay A, B, C to Y; see Figure 12
[2]
C
L
= 5 pF 2.0 2.9 3.9 0.5 8.0 8.8 ns
C
L
= 10 pF 2.5 3.5 4.6 1.0 8.5 9.4 ns
C
L
= 15 pF 2.8 3.9 5.2 1.0 9.1 10.1 ns
C
L
= 30 pF 3.6 5.1 6.6 1.5 9.8 10.8 ns
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74AUP1T57GF,132

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Manufacturer:
Nexperia
Description:
Translation - Voltage Levels 3V 1G LPOW CONF
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