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74LVC823ABQ,115

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74LVC823A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 8 April 2013 6 of 21
NXP Semiconductors
74LVC823A
9-bit D-type flip-flop; 5 V tolerance; positive edge-trigger; 3-state
6. Functional description
[1] H = HIGH voltage level
h = HIGH voltage level one set-up time prior to the LOW to HIGH CP transition
L = LOW voltage level
l = LOW voltage level one set-up time prior to the LOW to HIGH CP transition
Z = high-impedance OFF-state
= LOW to HIGH level transition
X = don’t care
NC = no change
7. Limiting values
[1] The minimum input voltage ratings may be exceeded if the input current ratings are observed.
[2] The output voltage ratings may be exceeded if the output current ratings are observed.
[3] For SO24 packages: P
tot
derates linearly with 8 mW/K above 70 C.
For SSOP24 and TSSOP24 packages: P
tot
derates linearly with 5.5 mW/K above 60 C.
For DHVQFN24 packages: P
tot
derates linearly with 4.5 mW/K above 60 C.
Table 3. Function table
[1]
Operating mode Input Internal
flip-flop
Output
OE MR CE CP Dn Qn
Clear LLXXXLL
Load and read register L H L lLL
LHL hHH
Load register and
disable outputs
HHL lLZ
HHL hHZ
Hold L H H NC X NC NC
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +6.5 V
I
IK
input clamping current V
I
<0V 50 - mA
V
I
input voltage
[1]
0.5 +6.5 V
I
OK
output clamping current V
O
>V
CC
or V
O
<0V - 50 mA
V
O
output voltage HIGH or LOW state
[2]
0.5 V
CC
+0.5 V
3-state
[2]
0.5 +6.5 V
I
O
output current V
O
=0VtoV
CC
- 50 mA
I
CC
supply current - 100 mA
I
GND
ground current 100 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 C to +125 C
[3]
- 500 mW
74LVC823A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 8 April 2013 7 of 21
NXP Semiconductors
74LVC823A
9-bit D-type flip-flop; 5 V tolerance; positive edge-trigger; 3-state
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.65 - 3.6 V
functional 1.2 - - V
V
I
input voltage 0 - 5.5 V
V
O
output voltage HIGH or LOW state 0 - V
CC
V
3-state 0 - 5.5 V
T
amb
ambient temperature in free air 40 - +125 C
t/V input transition rise and fall
rate
V
CC
= 1.65 V to 2.7 V 0 - 20 ns/V
V
CC
= 2.7 V to 3.6 V 0 - 10 ns/V
Table 6. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
V
IH
HIGH-level
input voltage
V
CC
= 1.2 V 1.08 - - 1.08 - V
V
CC
= 1.65 V to 1.95 V 0.65 V
CC
- - 0.65 V
CC
-V
V
CC
= 2.3 V to 2.7 V 1.7 - - 1.7 - V
V
CC
= 2.7 V to 3.6 V 2.0 - - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 1.2 V - - 0.12 - 0.12 V
V
CC
= 1.65 V to 1.95 V - - 0.35 V
CC
-0.35 V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 - 0.7 V
V
CC
= 2.7 V to 3.6 V - - 0.8 - 0.8 V
V
OH
HIGH-level
output
voltage
V
I
=V
IH
or V
IL
I
O
= 100 A;
V
CC
=1.65Vto3.6V
V
CC
0.2 - - V
CC
0.3 - V
I
O
= 4mA; V
CC
= 1.65 V 1.2 - - 1.05 - V
I
O
= 8mA; V
CC
= 2.3 V 1.8 - - 1.65 - V
I
O
= 12 mA; V
CC
= 2.7 V 2.2 - - 2.05 - V
I
O
= 18 mA; V
CC
= 3.0 V 2.4 - - 2.25 - V
I
O
= 24 mA; V
CC
= 3.0 V 2.2 - - 2.0 - V
V
OL
LOW-level
output
voltage
V
I
=V
IH
or V
IL
I
O
= 100 A;
V
CC
= 1.65 V to 3.6 V
- - 0.2 - 0.3 V
I
O
=4mA; V
CC
= 1.65 V - - 0.45 - 0.65 V
I
O
=8mA; V
CC
= 2.3 V - - 0.6 - 0.8 V
I
O
=12mA; V
CC
= 2.7 V - - 0.4 - 0.6 V
I
O
=24mA; V
CC
= 3.0 V - - 0.55 - 0.8 V
I
I
input leakage
current
V
CC
= 3.6 V; V
I
=5.5VorGND - 0.1 5-20 A
74LVC823A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 8 April 2013 8 of 21
NXP Semiconductors
74LVC823A
9-bit D-type flip-flop; 5 V tolerance; positive edge-trigger; 3-state
[1] All typical values are measured at V
CC
= 3.3 V (unless stated otherwise) and T
amb
=25C.
10. Dynamic characteristics
I
OZ
OFF-state
output
current
V
I
=V
IH
or V
IL
; V
CC
= 3.6 V;
V
O
=5.5VorGND;
-0.15-20 A
I
OFF
power-off
leakage
current
V
CC
= 0 V; V
I
or V
O
= 5.5 V - 0.1 10 - 20 A
I
CC
supply
current
V
CC
= 3.6 V; V
I
=V
CC
or GND;
I
O
=0A
-0.110 - 40A
I
CC
additional
supply
current
per input pin;
V
CC
= 2.7 V to 3.6 V;
V
I
=V
CC
0.6 V; I
O
=0A
- 5 500 - 5000 A
C
I
input
capacitance
V
CC
= 0 V to 3.6 V;
V
I
=GNDtoV
CC
-5.0- - -pF
Table 6. Static characteristics …continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 11.
Symbol Parameter Conditions T
amb
= 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation
delay
CP to Qn; see Figure 7
[2]
V
CC
= 1.2 V - 20 - - - ns
V
CC
= 1.65 V to 1.95 V 2.4 8.4 18.7 2.4 21.5 ns
V
CC
= 2.3 V to 2.7 V 1.7 4.4 9.6 1.7 11.1 ns
V
CC
= 2.7 V 1.5 4.1 8.9 1.5 11.5 ns
V
CC
= 3.0 V to 3.6 V 1.5 3.7 8.0 1.5 10.0 ns
t
PHL
HIGH to LOW
propagation
delay
MR to Qn; see Figure 9
V
CC
= 1.2 V - 15 - - - ns
V
CC
= 1.65 V to 1.95 V 2.1 9.5 21.4 2.1 24.7 ns
V
CC
= 2.3 V to 2.7 V 1.5 4.9 10.5 1.5 12.1 ns
V
CC
= 2.7 V 1.5 4.7 8.8 1.5 11.0 ns
V
CC
= 3.0 V to 3.6 V 1.5 4.1 7.9 1.5 10.0 ns
t
en
enable time OE to Qn; see Figure 10
[2]
V
CC
= 1.2 V - 18 - - - ns
V
CC
= 1.65 V to 1.95 V 1.7 7.4 16.5 1.7 19.0 ns
V
CC
= 2.3 V to 2.7 V 1.5 4.2 9.1 1.5 10.5 ns
V
CC
= 2.7 V 1.5 4.3 8.3 1.5 10.5 ns
V
CC
= 3.0 V to 3.6 V 1.5 3.4 7.2 1.5 9.0 ns
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74LVC823ABQ,115

Mfr. #:
Buy 74LVC823ABQ,115
Manufacturer:
Nexperia
Description:
IC FF D-TYPE SNGL 9BIT 24DHVQFN
Lifecycle:
New from this manufacturer.
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