Si5330
4 Rev. 1.0
2. Electrical Specifications
Table 1. Recommended Operating Conditions
(V
DD
= 1.8 V –5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, T
A
= –40 to 85°C)
Parameter Symbol Test Condition Min Typ Max Unit
Ambient Temperature T
A
–40 25 85 °C
Core Supply Voltage
V
DD
2.97 3.3 3.63 V
2.25 2.5 2.75 V
1.71 1.8 1.98 V
Output Buffer Supply
Voltage
V
DDOn
1.4 3.63 V
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise noted.
Table 2. DC Characteristics
(V
DD
= 1.8 V –5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, T
A
= –40 to 85°C)
Parameter
Symbol Test Condition Min Typ Max Unit
Core Supply Current I
DD
50 MHz refclk 10 mA
Output Buffer Supply Current I
DDOx
LVPECL, 710 MHz 30 mA
LVDS, 710 MHz 8 mA
HCSL, 250 MHz
2 pF load capacitance
——20 mA
SSTL, 350 MHz 19 mA
CMOS, 50 MHz
15 pF load capacitance
——28 mA
CMOS, 200 MHz
2 pF load capacitance
——28 mA
HSTL, 350 MHz 19 mA
Si5330
Rev. 1.0 5
Table 3. Performance Characteristics
(V
DD
= 1.8 V –5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, T
A
= –40 to 85°C)
Parameter
Symbol Test Condition Min Typ Max Unit
CLKIN Loss of Signal Assert
Time
t
LOS
—2.6 5 µs
CLKIN Loss of Signal De-Assert
Time
t
LOS_B
After initial start-up time has
expired
0.01 0.2 1 µs
Input-to-Output Propagation
Delay
t
PROP
—2.54.0 ns
Output-Output Skew t
DSKEW
Outputs at same signal
format
——100 ps
POR to Output Clock Valid t
START
Start-up time for output
clocks
—— 2 ms
Table 4. Input and Output Clock Characteristics
(V
DD
= 1.8 V –5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, T
A
= –40 to 85 °C)
Parameter Symbol Test Condition Min Typ Max Units
Input Clock (AC Coupled Differential Input Clocks on Pin IN1/2)
Frequency
f
IN
5 710 MHz
Differential Voltage Swing
V
PP
710 MHz input 0.4 2.4 V
PP
Rise/Fall Time
t
R
/t
F
20%–80% 1.0 ns
Duty Cycle
DC < 1 ns tr/tf 40 50 60 %
Input Impedance
R
IN
10 k
Input Capacitance
C
IN
—3.5pF
Input Clock (DC-Coupled Single-Ended Input Clock on Pin IN3)
Frequency
f
IN
CMOS 5 200 MHz
HSTL, SSTL 5 350 MHz
Input Voltage
V
I
–0.1 VDD V
Input Voltage Swing
(CMOS Standard)
200MHz, Tr/Tf=1.3ns 0.8 Vpp
Rise/Fall Time
t
R
/t
F
20%–80% 4 ns
Duty Cycle
DC < 2 ns tr/tf 40 50 60 %
Input Capacitance
C
IN
—2pF
Output Clocks (Differential)
Frequency
f
OUT
LVPECL, LVDS 5 710 MHz
HCSL 5 250 MHz
Si5330
6 Rev. 1.0
LVPECL Output Voltage
V
OC
common mode
V
DDO
1.45 V
—V
V
SEPP
peak-to-peak single-
ended swing
0.55 0.8 0.96 V
PP
LVDS Output Voltage
(2.5/3.3 V)
V
OC
common mode 1.125 1.2 1.275 V
V
SEPP
peak-to-peak single-
ended swing
0.25 0.35 0.45 V
PP
LVDS Output Voltage
(1.8 V)
V
OC
common mode 0.8 0.875 0.95 V
V
SEPP
peak-to-peak single-
ended swing
0.25 0.35 0.45 V
PP
HCSL Output Voltage
V
OC
common mode 0.35 0.375 0.400 V
V
SEPP
peak-to-peak single-
ended swing
0.575 0.725 0.85 V
PP
Rise/Fall Time
t
R
/t
F
20%–80% 450 ps
Duty Cycle*
DC
CKn < 350 MHz 45 55 %
350 MHz < CLKn <
710 MHz
40 60 %
Output Clocks (Single-Ended)
Frequency
f
OUT
CMOS 5 200 MHz
SSTL, HSTL 5 350 MHz
CMOS 20%-80%
Rise/Fall Time
t
R
/t
F
2 pF load 0.45 0.85 ns
CMOS 20%-80%
Rise/Fall Time
t
R
/t
F
15 pF load 1.7 ns
CMOS Output
Resistance
—50
SSTL Output Resistance
—50
HSTL Output Resistance
—50
CMOS Output Voltage
V
OH
4 mA load VDDO–0.3 V
V
OL
4 mA load 0.3 V
SSTL Output Voltage
V
OH
SSTL-3 VDDOx = 2.97 to
3.63 V
0.45xVDDO+0.41 V
V
OL
——
0.45xVDDO
–0.41
V
V
OH
SSTL-2 VDDOx = 2.25 to
2.75 V
0.5xVDDO+0.41 V
V
OL
——
0.5xVDDO–
0.41
V
V
OH
SSTL-18 VDDOx = 1.71
to 1.98 V
0.5xVDDO+0.34 V
V
OL
——
0.5xVDDO–
0.34
V
Table 4. Input and Output Clock Characteristics (Continued)
(V
DD
= 1.8 V –5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, T
A
= –40 to 85 °C)
Parameter Symbol Test Condition Min Typ Max Units

SI5330F-A00215-GM

Mfr. #:
Manufacturer:
Silicon Labs
Description:
Clock Buffer Single-ended input, 2.5V CMOS output, 1:8 clock buffer, 5 - 200 MHz
Lifecycle:
New from this manufacturer.
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