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MC33771BSP1AER2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P29
NXP Semiconductors
MC33771B_SDS
Battery cell controller IC
MC33771BSDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Short data sheet: technical data Rev. 5.0 — 2 May 2018
13 / 29
Symbol Parameter Min Typ Max Unit
CTn
(LEAKAGE)
Cell terminal input leakage current — 10 — nA
CTn
(FV)
Cell terminal input current - functional verification — 0.365 — mA
CT
N
Cell terminal input current during conversion — 50 — nA
R
PD
Cell terminal open load detection pull-down resistor — 950 — Ω
V
VPWR_RES
VPWR terminal measurement resolution — 2.44141 — mV/LSB
V
VPWR_RNG
VPWR terminal measurement range 9.6 — 75 V
VPWR
TERM_ERR
VPWR terminal measurement accuracy −0.5 — 0.5 %
V
CT_RNG
ADC differential input voltage range for CTn to CTn-1 0.0 — 4.85 V
V
CT_ANx_RES
Cell voltage and ANx resolution in 15-bit MEAS_xxxx registers — 152.58789 — µV/LSB
V
ERR33RT
Cell voltage measurement error V
CELL
= 3.3 V, T
A
= 25 °C −0.8 ±0.4 0.8 mV
V
ERR
Cell voltage measurement error
0.1 V ≤ V
CELL
≤ 4.8 V, −40 °C ≤ T
A
≤ 105 °C (or −40 °C ≤ T
J
≤
125 °C)
—
±0.7
—
mV
V
ERR_1
Cell voltage measurement error
0 V ≤ V
CELL
≤ 1.5 V, −40 °C ≤ T
A
≤ 60 °C (or −40 °C ≤ T
J
≤
85 °C)
—
±0.4
—
mV
V
ERR_2
Cell voltage measurement error
1.5 V ≤ V
CELL
≤ 2.7 V, −40 °C ≤ T
A
≤ 60 °C (or −40 °C ≤ T
J
≤
85 °C)
—
±0.4
—
mV
V
ERR_3
Cell voltage measurement error
2.7 V ≤ V
CELL
≤ 3.7 V, −40 °C ≤ T
A
≤ 60 °C (or −40 °C ≤ T
J
≤
85 °C)
—
±0.5
—
mV
V
ERR_4
Cell voltage measurement error
3.7 V ≤ V
CELL
≤ 4.3 V, −40 °C ≤ T
A
≤ 60 °C (or −40 °C ≤ T
J
≤
85 °C)
—
±0.7
—
mV
V
ERR_5
Cell voltage measurement error
1.5 V ≤ V
CELL
≤ 4.5 V, −40 °C ≤ T
A
≤ 105 °C (or −40 °C ≤ T
J
≤
125 °C)
—
±0.7
—
mV
V
ANx_ERR
Magnitude of ANx error in the entire measurement range:
Ratiometric measurement
Absolute measurement after soldering and aging, input in the
range [1.0, 4.5] V
Absolute measurement after soldering and aging, input in the
range [0, 4.85] V, for −40 °C < T
A
< 60 °C)
Absolute measurement after soldering and aging, input in the
range [0, 4.85] V, for −40 °C < T
A
< 105 °C)
—
—
−8.0
−11
—
—
—
—
16
10
8.0
11
mV
t
VCONV
Single channel net conversion time
13-bit resolution
14-bit resolution
15-bit resolution
16-bit resolution
—
—
—
—
6.77
9.43
14.75
25.36
—
—
—
—
µs
V
V_NOISE
Conversion noise
13-bit resolution
14-bit resolution
15-bit resolution
16-bit resolution
—
—
—
—
1800
1000
600
400
—
—
—
—
µVrms
ADC2/current sense module
V
INC
ISENSE+/ISENSE− input voltage (reference to AGND) −300 — 300 mV
V
IND
ISENSE+/ISENSE− differential input voltage range −150 — 150 mV
NXP Semiconductors
MC33771B_SDS
Battery cell controller IC
MC33771BSDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Short data sheet: technical data Rev. 5.0 — 2 May 2018
14 / 29
Symbol Parameter Min Typ Max Unit
V
ISENSEX(OFFSET)
ISENSE+/ISENSE− input voltage offset error — — 0.5 µV
I
GAINERR
ISENSE error including nonlinearities −0.5 — 0.5 %
I
ISENSE_OL
ISENSE open load injected current — 130 — µA
V
ISENSE_OL
ISENSE open load detection threshold — 460 — mV
V
2RES
Current sense user register resolution — 0.6 — µV/LSB
V
PGA_SAT
PGA saturation half-range
Gain = 256
Gain = 64
Gain = 16
Gain = 4
—
—
—
—
4.9
19.5
78.1
150.0
—
—
—
—
mV
V
PGA_ITH
Voltage threshold for PGA gain increase
Gain = 256
Gain = 64
Gain = 16
Gain = 4
—
—
—
—
—
2.344
9.375
37.50
—
—
—
—
mV
V
PGA_DTH
Voltage threshold for PGA gain decrease
Gain = 256
Gain = 64
Gain = 16
Gain = 4
—
—
—
—
4.298
17.188
68.750
—
—
—
—
—
mV
t
AZC_SETTLE
Time to perform auto-zero procedure after enabling the current
channel
— 200 — µs
t
ICONV
ADC conversion time including PGA settling time
13 bit resolution
14 bit resolution
15 bit resolution
16 bit resolution
—
—
—
—
19.00
21.67
27.00
37.67
—
—
—
—
µs
V
I_NOISE
Noise error at 16-bit conversion — 3.01 — µVrms
V
I_NOISE
Noise error at 13-bit conversion — 8.33 — µVrms
ADC
CLK
ADC2 and ADC1-A,B clocking frequency — 6.0 — MHz
Cell balance drivers
V
DS(CLAMP)
Cell balance driver VDS active clamp voltage — 11 — V
V
OUT(FLT_TH)
Output fault detection voltage threshold
Balance off (open load)
Balance on (shorted load)
—
0.55
—
V
R
PD_CB
Output OFF open load detection pull-down resistor
Balance off, open load detect disabled
—
2.0
—
kΩ
I
OUT(LKG)
Output leakage current
Balance off, open load detect disabled at V
DS
= 4.0 V
—
—
1.0
µA
R
DS(on)
Drain-to-source on resistance
I
OUT
= 300 mA, T
J
= 105 °C
I
OUT
= 300 mA, T
J
= 25 °C
I
OUT
= 300 mA, T
J
= −40 °C
—
—
—
—
0.5
0.4
0.80
—
—
Ω
I
LIM_CB
Driver current limitation (shorted resistor) 310 — 950 mA
t
CB_AUTOP
CB_AUTO_PAUSE timing — 4.0 — µs
t
ON
Cell balance driver turn on
R
L
= 15 Ω
—
350
—
µs
NXP Semiconductors
MC33771B_SDS
Battery cell controller IC
MC33771BSDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Short data sheet: technical data Rev. 5.0 — 2 May 2018
15 / 29
Symbol Parameter Min Typ Max Unit
t
OFF
Cell balance driver turn off
R
L
= 15 Ω
—
200
—
µs
t
BAL_DEGLICTH
Short/open detect filter time — 20 — µs
Internal temperature measurement
IC_TEMP1_ERR IC temperature measurement error −3.0 — 3.0 K
IC_TEMP1_RES IC temperature resolution — 0.032 — K/LSB
TSD_TH Thermal shutdown — 170 — °C
TSD_HYS Thermal shutdown hysteresis — 10 — °C
Default operational parameters
V
CTOV(TH)
Cell overvoltage threshold (8 bits), typical value is default value after
reset
0.0 4.2 5.0 V
V
CTOV(RES)
Cell overvoltage threshold resolution — 19.53125 — mV/LSB
V
CTUV(TH)
Cell undervoltage threshold (8 bits), typical value is default value
after reset
0.0 2.5 5.0 V
V
CTUV(RES)
Cell undervoltage threshold resolution — 19.53125 — mV/LSB
V
GPIO_OT(TH)
GPIOx configured as ANx input overtemperature threshold from
POR
— 1.16 — V
V
GPIO_OT(RES)
Temperature voltage threshold resolution — 4.8828125 — mV/LSB
V
GPIO_UT(TH)
GPIOx configured as ANx input undertemperature threshold from
POR
— 3.82 — V
V
GPIO_UT(RES)
Temperature voltage threshold resolution — 4.8828125 — mV/LSB
General purpose input/output GPIOx
V
IH
Input high-voltage (3.3 V compatible) 2.0 — — V
V
IL
Input low-voltage (3.3 V compatible) — — 1.0 V
V
HYS
Input hysteresis — 100 — mV
I
IL
Input leakage current
Pins tristate, V
IN
= V
COM
or AGND
−100
—
100
nA
I
IDL
Differential Input Leakage Current GPIO 5,6
GPIO 5,6 configured as digital inputs for current measurement
−30
—
30
nA
V
OH
Output high-voltage I
OH
= −0.5 mA V
COM
−
0.8
— — V
V
OL
Output low-voltage I
OL
= +0.5 mA — — 0.8 V
V
ADC
Analog ADC input voltage range for ratiometric measurements AGND — V
COM
V
V
OL(TH)
Analog input open pin detect threshold — 0.15 — V
R
OPENPD
Internal open detection pull-down resistor 3.8 5.0 — kΩ
t
GPIO0_WU
GPIO0 WU de-glitch filter — 50 — µs
t
GPIO0_FLT
GPIO0 daisy chain de-glitch filter both edges — 20 — µs
t
GPIO2_SOC
GPIO2 convert trigger de-glitch filter — 2.0 — µs
t
GPIOx_DIN
GPIOx configured as digital input de-glitch filter 2.5 — 5.6 µs
Reset input
V
IH_RST
Input high-voltage (3.3 V compatible) 2.0 — — V
V
IL_RST
Input low-voltage (3.3 V compatible) — — 1.0 V
V
HYS
Input hysteresis — 0.6 — V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P29

MC33771BSP1AER2

Mfr. #:
Buy MC33771BSP1AER2
Manufacturer:
NXP Semiconductors
Description:
Battery Management MC33771BSP1AE/HLQFP64///REEL 13 Q2 DP
Lifecycle:
New from this manufacturer.
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