NXP Semiconductors
MC33771B_SDS
Battery cell controller IC
MC33771BSDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Short data sheet: technical data Rev. 5.0 — 2 May 2018
16 / 29
Symbol Parameter Min Typ Max Unit
t
RESETFLT
RESET de-glitch filter 100 µs
R
RESET_PD
Input logic pull down (RESET) 100 kΩ
SPI_COM_EN input
V
IH
Input high-voltage (3.3 V compatible) 2.0 V
V
IL
Input low-voltage (3.3 V compatible) 1.0 V
V
HYS
Input hysteresis 450 mV
R
SPI_COM_EN_PD
Input pull-down resistor (SPI_COM_EN) 100 kΩ
Bus switch for TPL communication
RX
TERM
Bus termination resistor (open resistor when bus switch is closed) 150
Remark: If the bus switch is closed, then the termination resistor is open, else the termination resistor is connected. At the end of the daisy
chain, the switch must be open, so that the transmission line is properly terminated.
Digital interface
V
FAULT_HA
FAULT output (high active, IOH = 1.0 mA) 4.0 4.9 6.0 V
I
FAULT_CL
FAULT output current limit 3.0 40 mA
R
FAULT_PD
FAULT output pull-down resistance 100 kΩ
V
IH_COMM
Voltage threshold to detect the input as high
SI/RDTX_IN+, SCLK/RDTX_IN–, CSB, SDA, SCL (NOTE: needs
to be 3.3 V compatible)
2.0
V
V
IL_COMM
Voltage threshold to detect the input as low
SI/RDTX_IN+, SCLK/RDTX_IN–, CSB, SDA, SCL
0.8
V
V
HYS
Input hysteresis
SI/RDTX_IN+, SCLK/RDTX_IN−, CSB, SDA, SCL
80
mV
I
LOGIC_SS
Sleep state input logic current
CSB
−100
100
nA
R
SCLK_PD
Input logic pull-down resistance (SCLK/RDTX_IN–, SI/RDTX+) 20 kΩ
R
I_PU
Input logic pull-up resistance to V
COM
(CSB, SDA, SCL) 100 kΩ
I
SO_TRI
Tristate SO input current 0 V to V
COM
−2.0 2.0 µA
V
SO_HIGH
SO high-state output voltage with I
SO(HIGH)
= −2.0 mA V
COM
0.4
V
V
SO_LOW
SO, SDA, SLK low-state output voltage with I
SO(HIGH)
= −2.0 mA 0.4 V
CSB
WU_FLT
CSB wake-up de-glitch filter, low to high transition 50 µs
System timing
t
CELL_CONV
Time needed to acquire all 14 cell voltages and the current after an
on demand conversion
13-bit resolution
14-bit resolution
15-bit resolution
16-bit resolution
59
80
123
208
µs
t
SYNC
V/I synchronization time
ADC1-A,B at 13 bit, ADC2 at 13 bit
ADC1-A,B at 14 bit, ADC2 at 13 bit
ADC1-A,B at 15 bit, ADC2 at 13 bit
ADC1-A,B at 16 bit, ADC2 at 13 bit
48.16
53.50
64.16
85.50
µs
NXP Semiconductors
MC33771B_SDS
Battery cell controller IC
MC33771BSDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Short data sheet: technical data Rev. 5.0 — 2 May 2018
17 / 29
Symbol Parameter Min Typ Max Unit
t
SYNC
V/I synchronization time
ADC1-A,B at 13 bit, ADC2 at 14 bit
ADC1-A,B at 14 bit, ADC2 at 14 bit
ADC1-A,B at 15 bit, ADC2 at 14 bit
ADC1-A,B at 16 bit, ADC2 at 14 bit
52.14
57.48
68.14
89.48
µs
t
SYNC
V/I synchronization time
ADC1-A,B at 13 bit, ADC2 at 15 bit
ADC1-A,B at 14 bit, ADC2 at 15 bit
ADC1-A,B at 15 bit, ADC2 at 15 bit
ADC1-A,B at 16 bit, ADC2 at 15 bit
62.12
65.46
76.12
97.46
µs
t
SYNC
V/I synchronization time
ADC1-A,B at 13 bit, ADC2 at 16 bit
ADC1-A,B at 14 bit, ADC2 at 16 bit
ADC1-A,B at 15 bit, ADC2 at 16 bit
ADC1-A,B at 16 bit, ADC2 at 16 bit
120.51
117.84
112.51
113.39
µs
t
VPWR(READY)
Time after VPWR connection for the IC to be ready for initialization 5.0 ms
t
WAKE-UP
Sleep mode to normal mode device ready
Wake-up from fault
Wake-up from GPIO
Wake-up from network
Wake-up from CSB
400
400
400
400
µs
Sleep mode to normal mode time after TPL bus wake-up 1.0 ms
t
WAKE_DELAY
Time between wake pulses 600 µs
t
IDLE
Idle timeout after POR 60 s
t
WAKE_INIT
Wake-up signaling timeout after POR 0.65 s
t
BALANCE
Cell balance timer range 0.5 511 min
t
CYCLE
Cyclic acquisition timer range 0.0 8.5 s
t
FAULT
Fault detection to activation of fault pin
Normal mode
56
µs
t
DIAG
Diagnostic mode timeout 0.047 1.0 8.5 s
t
EOC
SOC to data ready (includes post processing of data)
13-bit resolution
14-bit resolution
15-bit resolution
16-bit resolution
148
201
307
520
µs
t
SETTLE
Time after SOC to begin converting with ADC1-A,B 12.28 µs
t
SYS_MEAS1
Time needed to send an SOC command and read back 96 cell
voltages, 48 temperatures, 1 current, and 1 coulomb counter and
ADC1-A,B configured as follows:
13-bit resolution
14-bit resolution
15-bit resolution
16-bit resolution
3.73
3.78
3.89
4.10
ms
t
SYS_MEAS2
Time needed to send an SOC command and read back 96
cell voltages, 1 current, and 1 coulomb counter and ADC1-A,B
configured as follows:
13-bit resolution
14-bit resolution
15-bit resolution
16-bit resolution
2.64
2.69
2.80
3.01
ms
NXP Semiconductors
MC33771B_SDS
Battery cell controller IC
MC33771BSDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Short data sheet: technical data Rev. 5.0 — 2 May 2018
18 / 29
Symbol Parameter Min Typ Max Unit
t
CLST_TPL
Time needed to send an SOC command and read back 14 cell
voltages, 7 temperatures, 1 current, and 1 coulomb counter with TPL
communication working at 2.0 Mbps and ADC1-A,B configured as
follows:
13-bit resolution
14-bit resolution
15-bit resolution
16-bit resolution
0.79
0.85
0.95
1.16
ms
t
CLST_SPI
Time needed to send an SOC command and read back 14 cell
voltages, 7 temperatures, 1 current, and 1 coulomb counter with SPI
communication working at 4.0 Mbps and ADC1-A,B configured as
follows:
13-bit resolution
14-bit resolution
15-bit resolution
16-bit resolution
0.48
0.54
0.64
0.86
ms
t
I2C_DOWNLOAD
Time to download EEPROM calibration after POR 1.0 ms
t
I2C_ACCESS
EEPROM access time, EEPROM write (depends on device
selection)
5.0 ms
t
WAVE_DC_BITx
Daisy chain duty cycle off time
t
WAVE_DC_BITx = 00
500
µs
t
WAVE_DC_BITx
Daisy chain duty cycle off time
t
WAVE_DC_BITx = 01
1.0
ms
t
WAVE_DC_BITx
Daisy chain duty cycle off time
t
WAVE_DC_BITx = 10
10
ms
t
WAVE_DC_BITx
Daisy chain duty cycle off time
t
WAVE_DC_BITx = 11
100
ms
t
WAVE_DC_ON
Daisy chain duty cycle on time 500 537 µs
t
COM_LOSS
Time out to reset the IC in the absence of communication 1024 ms
SPI interface
F
SCK
CLK/RDTX_IN– frequency
[1]
4.0 MHz
t
SCK _H
SCLK/RDTX_IN– high time (A)
[1]
125 ns
t
SCK _L
SCLK/RDTX_IN– high time (B)
[1]
125 ns
t
SCK
SCLK/RDTX_IN− period (A+B)
[1]
250 ns
t
FALL
SCLK/RDTX_IN− falling time 15 ns
t
RISE
SCLK/RDTX_IN− rising time 15 ns
t
SET
SCLK/RDTX_IN− setup time (O)
[1]
20 ns
t
HOLD
SCLK/RDTX_IN– hold time (P)
[1]
20 ns
t
SI_SETUP
SI/RDTX_IN+ setup time (F)
[1]
40 ns
t
SI_HOLD
SI/RDTX_IN+ hold time (G)
[1]
40 ns
t
SO_VALID
SO data valid, rising edge of SCLK/RDTX_IN− to SO data valid (I)
[1]
40 ns
t
SO_EN
SO enable time (H)
[1]
40 ns
t
SO_DISABLE
SO disable time (K)
[1]
40 ns
t
CSB_LEAD
CSB lead time (L)
[1]
100 ns
t
CSB_LAG
CSB lag time (M)
[1]
100 ns
t
TD
Sequential data transfer delay (N)
[1]
1.0 µs

MC33771BSP1AER2

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Battery Management MC33771BSP1AE/HLQFP64///REEL 13 Q2 DP
Lifecycle:
New from this manufacturer.
Delivery:
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