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LTC4370CMS#PBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
LTC4370
4
4370f
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
I
FETON
FETON1, FETON2 Leakage Current At 12V
l
0 ±1 µA
ΔV
GATE(ON)
MOSFET On Detect Threshold
(GATE – V
IN
)
FETON Transitions High
l
0.28 0.7 1.1 V
Typical perForMance characTerisTics
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to GND unless otherwise
specified.
elecTrical characTerisTics
T
A
= 25°C, V
IN1
= V
IN2
= 12V, OUT = V
IN
, V
CC
open,
unless otherwise noted.
Note 3: Internal clamps limit the GATE and CPO pins to a minimum of 10V
above, and a diode below the corresponding V
IN
pin. Driving these pins to
voltages beyond the clamp may damage the device.
V
IN
Current vs Voltage
OUT Current vs Voltage
V
IN
Current vs Voltage with
External V
CC
V
CC
Current vs Voltage
Minimum Forward Regulation
Voltage vs V
IN
Voltage with
External V
CC
V
IN
(V)
0
–0.5
0
1.5
3 6 129 15
3
0.5
2
1
2.5
18
4370 G01
I
IN
(mA)
OTHER V
IN
= 0V
OTHER V
IN
= 12V
V
IN
(V)
0
–150
I
IN
(µA)
0
150
250
1 2 43 5
300
–100
50
–50
100
200
6
4370 G02
V
CC
= 6V
OTHER V
IN
= 0V
V
CC
(V)
0
0
1.5
1 2 43 5
0.5
2
1
2.5
6
4370 G03
I
CC
(mA)
BOTH V
IN
= 0V
V
OUT
(V)
0
–50
100
250
3 6 129 15
300
0
150
50
200
18
4370 G04
I
OUT
(µA)
V
IN
(V)
0
0
15
30
1 2 43
5
20
10
25
5
4370 G05
V
CC
= 5V
V
FR(MIN)
(mV)
V
CC
= 3.3V
LTC4370
5
4370f
Typical perForMance characTerisTics
Error Amplifier Transfer
Characteristic
FETON Output Low Voltage
vs Current
FETON Output High Voltage
vs Current
�V
GATE
Voltage vs Current
�V
GATE
and V
CC
Voltages
vs V
IN
Voltage
Maximum Forward Regulation
Voltage vs RANGE Resistor
T
A
= 25°C, V
IN1
= V
IN2
= 12V, OUT = V
IN
, V
CC
open,
unless otherwise noted.
I
GATE
(µA)
0
–3
6
–20 –40 –80–60 –100
15
0
9
3
12
–120
4370 G06
V
IN
= 2.9V
V
GATE
– V
IN
(V)
V
IN
= 18V
4
14
0
6
2
10
12
8
V
IN
(V)
0 63 9 1512
18
4370 G07
V
CC
V
GATE
– V
IN
, V
CC
(V)
∆V
GATE
R
RANGE
(kΩ)
0
0
300
600
20 40 8060
700
100
400
200
500
100
4370 G08
V
FR(MAX)
(mV)
–30
0
30
–20
10
–10
20
V
OUT1
– V
OUT2
(mV)
–300
I
COMP
(µA)
–200 –100 1000 200 300
4370 G09
I
FETON
(mA)
0
0
300
600
1 2 43
700
100
400
200
500
5
4370 G10
V
OL
(mV)
I
FETON
(µA)
0
0
3
–2 –4 –8–6
5
1
4
2
–10
4370 G11
V
OH
(V)
LTC4370
6
4370f
COMP: Error Amplifier Compensation. Connect a capacitor
from this pin to GND. The value of this capacitor should be
approximately 10 to 50 times the gate capacitance (C
ISS
)
of the MOSFET switch. Maintain low board leakage on this
pin for best load sharing accuracy. For example, 100nA
of leakage current (equal to 1V across 10MΩ) increases
the error amplifier offset by 0.7mV. Leave this pin open
if only using ideal diode mode.
CPO1, CPO2: Charge Pump Output. Connect a capacitor
from this pin to the corresponding V
IN
pin. The value of
this capacitor should be approximately 10× the gate ca-
pacitance (C
ISS
) of the MOSFET switch. The charge stored
on this capacitor is used to pull up the gate during a fast
turn-on. Leave this pin open if fast turn-on is not needed.
EN1, EN2: Enable Input. Keep this pin below 0.6V to enable
sharing and diode control on the corresponding supply.
Driving this pin high shuts off the MOSFET gate (current
can still flow through its body diode). The comparator has
a built-in hysteresis of 8mV. Having both EN pins high
lowers the current consumption of the device.
Exposed Pad (DE Package Only):
The exposed pad may
be left open or connected to device ground.
FETON1, FETON2: MOSFET Status Output. This pin is
pulled low by an internal switch when GATE is less than
0.7V above V
IN
to indicate an off MOSFET. Because of this,
it may also signal off if small currents are flowing through
a high-g
m
MOSFET with a large forward voltage across
it. An internal 500k resistor pulls this pin up to a diode
below V
CC
. It may be pulled above V
CC
using an external
pull-up. Tie to GND or leave open if unused.
GATE1, GATE2: MOSFET Gate Drive Output.Connect this
pin to the gate of the external N-channel MOSFET switch.
An internal clamp limits the gate voltage to 12V above,
and a diode below the input supply. During fast turn-on,
a 1.4A pull-up current charges GATE to CPO. During fast
turn-off, a 1.4A pull-down current discharges GATE to V
IN
.
GND: Device Ground.
OUT1, OUT2: Output Voltage and Current Sense Input.
Connect this pin to the input side of the supply’s current
sense resistor. A Kelvin connection is important for ac-
curate current sharing. The voltage
sensed at this pin is
used to control the MOSFET gate.
RANGE: Supply
Differential Voltage Load Sharing Range.
Connect a resistor (below 60k) from this pin to GND. A
10μA internal pull-up current source into this resistor
sets the pin voltage V
RANGE
. The two supplies will typi-
cally share the load current if their voltage difference is
within ±V
RANGE
. The maximum sharing range is ±0.6V,
obtained by leaving RANGE open. Connecting this pin to
V
CC
disables load share control and the device behaves
as a dual ideal diode controller.
V
CC
: Low Voltage Supply. Connect a 0.1μF capacitor from
this pin to ground. For V
IN
≥ 2.9V this pin provides decou-
pling for an internal regulator that generates a 5V supply.
For applications where both V
IN
< 2.9V, also connect an
external supply in the 2.9V to 6V range to this pin.
V
IN1
, V
IN2
: Voltage Sense and Supply Input. Connect
this pin to the supply side of the MOSFET. The low volt-
age supply V
CC
is generated from the higher of V
IN1
and
V
IN2
. The voltage sensed at this pin is used to control the
MOSFET gate.
pin FuncTions
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

LTC4370CMS#PBF

Mfr. #:
Buy LTC4370CMS#PBF
Manufacturer:
Analog Devices Inc.
Description:
Power Management Specialized - PMIC Two-S Diode-OR C Balancing Cntr
Lifecycle:
New from this manufacturer.
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