NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
FEATURES
• High power gain
• Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
APPLICATIONS
• Designed for industrial and military
applications in the HF/VHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
encapsulated in a 4-lead, SOT121B
flanged package, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (V
GS
) information is provided
for matched pair applications. Refer
to the handbook 'General' section for
further information.
PINNING
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
ndbook, halfpage
MLA876
43
21
s
d
g
MBB072
Fig.1 Simplified outline (SOT121B) and symbol.
QUICK REFERENCE DATA
RF performance at T
h
=25°C in a common source test circuit.
MODE OF
OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
3
(dB)
d
5
(dB)
SSB class-AB 28 50 150 (PEP) >20 >35 <−30 <−30
CW class-B 108 50 150 typ. 19 typ. 70 −−
Rev. 06 - 24 January 2007
