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BLF177CR,112

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage I
D
= 100 mA; V
GS
= 0 125 −−V
I
DSS
drain-source leakage current V
GS
= 0; V
DS
=50V −−2.5 mA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
=0 −−1 µA
V
GSth
gate-source threshold voltage I
D
= 50 mA; V
DS
=10V 2 − 4.5 V
∆V
GS
gate-source voltage difference of
matched pairs
I
D
= 50 mA; V
DS
=10V −−100 mV
g
fs
forward transconductance I
D
= 5 A; V
DS
= 10 V 4.5 6.2 − S
R
DSon
drain-source on-state resistance I
D
= 5 A; V
GS
=10V − 0.2 0.3 Ω
I
DSX
on-state drain current V
GS
= 10 V; V
DS
=10V − 25 − A
C
is
input capacitance V
GS
= 0; V
DS
=50V; f=1MHz − 480 − pF
C
os
output capacitance V
GS
= 0; V
DS
=50V; f=1MHz − 190 − pF
C
rs
feedback capacitance V
GS
= 0; V
DS
=50V; f=1MHz − 14 − pF
V
GS
group indication
GROUP
LIMITS
(V)
GROUP
LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
Rev. 06 - 24 January 2007
4 of 19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, halfpage
0
−5
MGP090
10
−1
11010
−2
−4
−3
−2
−1
I
D
(A)
T.C.
(mV/K)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
V
DS
= 10 V; valid for T
h
=25to70°C.
handbook, halfpage
0
30
20
10
0
51015
MGP091
I
D
(A)
V
GS
(V)
Fig.5 Drain current as a function of gate-source
voltage; typical values.
V
DS
=10V.
handbook, halfpage
0
400
300
200
100
50 100 150
MGP092
R
DSon
(mΩ)
T
j
(°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
I
D
= 5 A; V
GS
=10V.
handbook, halfpage
0
1200
800
400
0
20 40
C
is
C
os
60
V
DS
(V)
C
(pF)
MBK408
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
V
GS
= 0; f = 1 MHz.
Rev. 06 - 24 January 2007
5 of 19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, halfpage
0
300
200
100
0
10 5020 30 40
MGP093
C
rs
(pF)
V
DS
(V)
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
V
GS
= 0; f = 1 MHz.
APPLICATION INFORMATION FOR CLASS-AB OPERATION
RF performance in SSB operation in a common source class-AB test circuit (see Fig.13).
T
h
=25°C; R
th mb-h
= 0.2 K/W; Z
L
= 6.25 + j0 Ω; f
1
= 28.000 MHz; f
2
= 28.001 MHz unless otherwise specified.
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: f = 28 MHz; V
DS
= 50 V at rated output power.
MODE OF
OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(A)
P
L
(W)
G
p
(dB)
η
D
(%)
d
3
(dB)
(note 1)
d
5
(dB)
(note 1)
SSB, class-AB 28 50 0.7 20 to 150
(PEP)
>20
typ. 35
>35
typ. 40
<−30
typ. −35
<−30
typ. −38
Rev. 06 - 24 January 2007
6 of 19
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

BLF177CR,112

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RF FET NCHA 125V SOT121B
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