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BLF177CR,112

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
List of components class-B test circuit (see Fig.19)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
r
= 2.2),
thickness 1.6 mm (Rogers 5880).
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C16, C18 film dielectric trimmer 2.5 to 20 pF 2222 809 07004
C3 multilayer ceramic chip capacitor
(note 1)
20 pF
C4, C5 multilayer ceramic chip capacitor
(note 1)
62 pF
C6, C7, C9, C10 multilayer ceramic chip capacitor
(note 1)
1nF
C8 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C12 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C13, C14 multilayer ceramic chip capacitor
(note 1)
36 pF
C15 multilayer ceramic chip capacitor
(note 1)
12 pF
C17 multilayer ceramic chip capacitor
(note 1)
5.6 pF
C19 electrolytic capacitor 4.4 µF, 63 V 2222 030 28478
L1 3 turns enamelled 0.8 mm copper
wire
22 nH length 5.5 mm;
int. dia. 3 mm;
leads 2 × 5mm
L2 stripline (note 2) 64.7 Ω 31 × 3mm
L3, L4 stripline (note 2) 41.1 Ω 10 × 6mm
L5 6 turns enamelled 1.6 mm copper
wire
122 nH length 13.8 mm;
int. dia. 6 mm;
leads 2 × 5mm
L6 grade 3B Ferroxcube wideband HF
choke
4312 020 36642
L7 1 turn enamelled 1.6 mm copper
wire
16.5 nH int. dia. 9 mm;
leads 2 × 5mm
L8 2 turns enamelled 1.6 mm copper
wire
34.4 nH length 3.9 mm;
int. dia. 6 mm;
leads 2 × 5mm
R1, R2 metal film resistor 31.6 Ω, 1 W
R3 metal film resistor 1 kΩ, 0.4 W
R4 cermet potentiometer 5 kΩ
R5 metal film resistor 44.2 kΩ, 0.4 W
R6 metal film resistor 10 Ω, 1W
Rev. 06 - 24 January 2007
13 of 19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, full pagewidth
MGP105
174
70
strap
strap strap
rivet
C1 C2
C3
C4
C8
C6
C7
C5
L2
L1
L3
R1 R2
R3
R4
L4
L7
L5
L8
C14
C13
C12
+V
D
R6
L6
R5
C10
C11
C9
C15
C19
C16 C18
C17
Fig.20 Component layout for 108 MHz class-B test circuit.
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground.
Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a
direct contact between upper and lower sheets.
Rev. 06 - 24 January 2007
14 of 19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, halfpage
0 200
4
−6
−4
MGP107
−2
0
2
100
r
i
x
i
Z
i
(Ω)
f
(MHz)
Fig.21 Input impedance as a function of frequency
(series components); typical values.
Class-B operation; V
DS
=50V;I
DQ
= 0.1 A;
P
L
= 150 W; R
GS
=15Ω.
handbook, halfpage
0 200
10
0
2
MGP108
4
6
8
100
X
L
Z
L
(Ω)
f
(MHz)
R
L
Fig.22 Load impedance as a function of frequency
(series components); typical values.
Class-B operation; V
DS
=50V;I
DQ
= 0.1 A;
P
L
= 150 W; R
GS
=15Ω.
handbook, halfpage
MBA379
Z
i
Z
L
Fig.23 Definition of transistor impedance.
handbook, halfpage
0 200
30
10
0
20
100
MGP109
G
p
(dB)
f
(MHz)
Fig.24 Power gain as a function of frequency;
typical values.
Class-B operation; V
DS
=50V;I
DQ
= 0.1 A;
P
L
= 150 W; R
GS
=15Ω.
Rev. 06 - 24 January 2007
15 of 19
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

BLF177CR,112

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RF FET NCHA 125V SOT121B
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