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BLF177CR,112

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, halfpage
0
30
20
10
0
100 200
MGP096
G
p
(dB)
P
L
(W) PEP
Fig.9 Power gain as a function of load power;
typical values.
Class-AB operation; V
DS
= 50 V; I
DQ
= 0.7 A;
R
GS
=5Ω; f
1
= 28.000 MHz; f
2
= 28.001 MHz.
handbook, halfpage
0
60
40
20
0
100 200
MGP094
η
D
(%)
P
L
(W) PEP
Fig.10 Two tone efficiency as a function of load
power; typical values.
Class-AB operation; V
DS
= 50 V; I
DQ
= 0.7 A;
R
GS
=5Ω; f
1
= 28.000 MHz; f
2
= 28.001 MHz.
handbook, halfpage
0
−20
−40
−30
−50
−60
100 200
MGP097
d
3
(dB)
P
L
(W) PEP
Fig.11 Third order intermodulation distortion as a
function of load power; typical values.
Class-AB operation; V
DS
= 50 V; I
DQ
= 0.7 A;
R
GS
=5Ω; f
1
= 28.000 MHz; f
2
= 28.001 MHz.
handbook, halfpage
0
−20
−40
−30
−50
−60
100 200
MGP098
d
5
(dB)
P
L
(W) PEP
Fig.12 Fifth order intermodulation distortion as a
function of load power; typical values.
Class-AB operation; V
DS
= 50 V; I
DQ
= 0.7 A;
R
GS
=5Ω; f
1
= 28.000 MHz; f
2
= 28.001 MHz.
Rev. 06 - 24 January 2007
7 of 19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
handbook, full pagewidth
MGP095
input
50 Ω
C1
C5
C6
C8
L1
L2
D.U.T.
L3
L6
L4
R2R1
R3
R4
C4
C2
+V
G
C3
C13
C10
C9
C11
C12
C15
+V
D
C14
L5
R5
C7
output
50 Ω
Fig.13 Test circuit for class-AB operation.
Rev. 06 - 24 January 2007
8 of 19
NXP Semiconductors Product specification
HF/VHF power MOS transistor BLF177
List of components class-AB test circuit (see Fig.13)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
r
= 2.2),
thickness 1.6 mm (Rogers 5880).
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C4, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2 multilayer ceramic chip capacitor
(note 1)
56 pF
C3, C11 multilayer ceramic chip capacitor
(note 1)
62 pF
C5, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C8 electrolytic capacitor 2.2 µF, 63 V
C9, C10 multilayer ceramic chip capacitor
(note 1)
20 pF
C12 multilayer ceramic chip capacitor
(note 1)
100 pF
C15 multilayer ceramic chip capacitor
(note 1)
150 pF
L1 5 turns enamelled 0.7 mm copper
wire
133 nH length 4.5 mm; int.
dia. 6 mm; leads
2 × 5mm
L2, L3 stripline (note 2) 41.1 Ω length 13 × 6mm
L4 7 turns enamelled 1.5 mm copper
wire
236 nH length 12.5 mm;
int. dia. 8 mm;
leads 2 × 5mm
L5 grade 3B Ferroxcube wideband HF
choke
4312 020 36642
L6 5 turns enamelled 2 mm copper wire 170 nH length 11.5 mm;
int. dia. 8 mm;
leads 2 × 5mm
R1, R2 metal film resistor 10 Ω, 1 W
R2 metal film resistor 10 kΩ, 0.4 W
R3 metal film resistor 1 MΩ, 0.4 W
R5 metal film resistor 10 kΩ, 1 W
Rev. 06 - 24 January 2007
9 of 19
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

BLF177CR,112

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RF FET NCHA 125V SOT121B
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